NL1005689C2 - Copolymeren die N-vinyllactamderivaten bevatten, methoden ter bereiding daarvan en daarvan gemaakte fotoresistmaterialen. - Google Patents
Copolymeren die N-vinyllactamderivaten bevatten, methoden ter bereiding daarvan en daarvan gemaakte fotoresistmaterialen. Download PDFInfo
- Publication number
- NL1005689C2 NL1005689C2 NL1005689A NL1005689A NL1005689C2 NL 1005689 C2 NL1005689 C2 NL 1005689C2 NL 1005689 A NL1005689 A NL 1005689A NL 1005689 A NL1005689 A NL 1005689A NL 1005689 C2 NL1005689 C2 NL 1005689C2
- Authority
- NL
- Netherlands
- Prior art keywords
- carbon atoms
- group
- aryl group
- vinyl
- alkyl group
- Prior art date
Links
- 229920001577 copolymer Polymers 0.000 title claims description 26
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 16
- 229920002554 vinyl polymer Polymers 0.000 title claims description 15
- 239000000463 material Substances 0.000 title description 17
- 238000000034 method Methods 0.000 title description 11
- 238000002360 preparation method Methods 0.000 title description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 57
- 125000003118 aryl group Chemical group 0.000 claims description 25
- 125000000217 alkyl group Chemical group 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 19
- 229920000642 polymer Polymers 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 11
- 125000004665 trialkylsilyl group Chemical group 0.000 claims description 11
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 10
- 230000003321 amplification Effects 0.000 claims description 10
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 10
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims description 4
- 125000004122 cyclic group Chemical group 0.000 claims description 4
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 4
- 125000005842 heteroatom Chemical group 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 238000006116 polymerization reaction Methods 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 claims 1
- -1 naphthoquinone diazine compound Chemical class 0.000 description 23
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 14
- 230000035945 sensitivity Effects 0.000 description 14
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000000178 monomer Substances 0.000 description 9
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical class O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000005481 NMR spectroscopy Methods 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 6
- 238000002329 infrared spectrum Methods 0.000 description 6
- JWYVGKFDLWWQJX-UHFFFAOYSA-N 1-ethenylazepan-2-one Chemical compound C=CN1CCCCCC1=O JWYVGKFDLWWQJX-UHFFFAOYSA-N 0.000 description 5
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 239000012074 organic phase Substances 0.000 description 4
- 238000010898 silica gel chromatography Methods 0.000 description 4
- ZWLPHMHEARANAO-UHFFFAOYSA-N tert-butyl 1-ethenyl-2-oxopyrrolidine-3-carboxylate Chemical compound CC(C)(C)OC(=O)C1CCN(C=C)C1=O ZWLPHMHEARANAO-UHFFFAOYSA-N 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- JFNFAASMVVUXFV-UHFFFAOYSA-N oxan-2-yl 1-ethenyl-2-oxopyrrolidine-3-carboxylate Chemical compound O=C1N(C=C)CCC1C(=O)OC1OCCCC1 JFNFAASMVVUXFV-UHFFFAOYSA-N 0.000 description 3
- KUVPDZGLZMSZJL-UHFFFAOYSA-N oxolan-2-yl 1-ethenyl-2-oxopyrrolidine-3-carboxylate Chemical compound O=C1N(C=C)CCC1C(=O)OC1OCCC1 KUVPDZGLZMSZJL-UHFFFAOYSA-N 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 3
- 125000004810 2-methylpropylene group Chemical group [H]C([H])([H])C([H])(C([H])([H])[*:2])C([H])([H])[*:1] 0.000 description 2
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000010511 deprotection reaction Methods 0.000 description 2
- ZQMIGQNCOMNODD-UHFFFAOYSA-N diacetyl peroxide Chemical compound CC(=O)OOC(C)=O ZQMIGQNCOMNODD-UHFFFAOYSA-N 0.000 description 2
- 238000000113 differential scanning calorimetry Methods 0.000 description 2
- 229940043279 diisopropylamine Drugs 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000003505 polymerization initiator Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 125000006239 protecting group Chemical group 0.000 description 2
- 229920013730 reactive polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- JAMNSIXSLVPNLC-UHFFFAOYSA-N (4-ethenylphenyl) acetate Chemical compound CC(=O)OC1=CC=C(C=C)C=C1 JAMNSIXSLVPNLC-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- PHPRWKJDGHSJMI-UHFFFAOYSA-N 1-adamantyl prop-2-enoate Chemical compound C1C(C2)CC3CC2CC1(OC(=O)C=C)C3 PHPRWKJDGHSJMI-UHFFFAOYSA-N 0.000 description 1
- LGJCFVYMIJLQJO-UHFFFAOYSA-N 1-dodecylperoxydodecane Chemical compound CCCCCCCCCCCCOOCCCCCCCCCCCC LGJCFVYMIJLQJO-UHFFFAOYSA-N 0.000 description 1
- JBKFPCSZNWLZAS-UHFFFAOYSA-N 1-ethenyl-4-methylpiperidin-2-one Chemical compound CC1CCN(C=C)C(=O)C1 JBKFPCSZNWLZAS-UHFFFAOYSA-N 0.000 description 1
- IGAUXTMDBTWAKI-UHFFFAOYSA-N 1-ethenyl-4-propylpiperidin-2-one Chemical compound CCCC1CCN(C=C)C(=O)C1 IGAUXTMDBTWAKI-UHFFFAOYSA-N 0.000 description 1
- UFBGFFRWZFQSRM-UHFFFAOYSA-N 1-ethenyl-4-propylpyrrolidin-2-one Chemical compound CCCC1CN(C=C)C(=O)C1 UFBGFFRWZFQSRM-UHFFFAOYSA-N 0.000 description 1
- GGYVTHJIUNGKFZ-UHFFFAOYSA-N 1-methylpiperidin-2-one Chemical compound CN1CCCCC1=O GGYVTHJIUNGKFZ-UHFFFAOYSA-N 0.000 description 1
- OYDRLDYTXOBYIW-UHFFFAOYSA-N 2-(4-ethenylcyclohexyl)oxyoxane Chemical compound C1CC(C=C)CCC1OC1OCCCC1 OYDRLDYTXOBYIW-UHFFFAOYSA-N 0.000 description 1
- KFWHLIHBXAHMDE-UHFFFAOYSA-N 2-(4-ethenylcyclohexyl)oxyoxolane Chemical compound C1CC(C=C)CCC1OC1OCCC1 KFWHLIHBXAHMDE-UHFFFAOYSA-N 0.000 description 1
- ZVAKZVDJIUFFFP-UHFFFAOYSA-N 2-chlorooxolane Chemical compound ClC1CCCO1 ZVAKZVDJIUFFFP-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 description 1
- FMFHUEMLVAIBFI-UHFFFAOYSA-N 2-phenylethenyl acetate Chemical compound CC(=O)OC=CC1=CC=CC=C1 FMFHUEMLVAIBFI-UHFFFAOYSA-N 0.000 description 1
- LIPHPCKTNVMODD-UHFFFAOYSA-N 4-butyl-1-ethenylpyrrolidin-2-one Chemical compound CCCCC1CN(C=C)C(=O)C1 LIPHPCKTNVMODD-UHFFFAOYSA-N 0.000 description 1
- QKJHNPXSYSFZMJ-UHFFFAOYSA-N 4-ethenyl-2-methylphenol Chemical compound CC1=CC(C=C)=CC=C1O QKJHNPXSYSFZMJ-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 238000012662 bulk polymerization Methods 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical group O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000003951 lactams Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- BDLZFLASTNLOTB-UHFFFAOYSA-N oxan-2-yl 1-ethenyl-5-ethyl-2-oxopyrrolidine-3-carboxylate Chemical compound O=C1N(C=C)C(CC)CC1C(=O)OC1OCCCC1 BDLZFLASTNLOTB-UHFFFAOYSA-N 0.000 description 1
- AEMMZSXVHMZEOZ-UHFFFAOYSA-N oxolan-2-yl 4-butyl-1-ethenyl-2-oxopyrrolidine-3-carboxylate Chemical compound CCCCC1CN(C=C)C(=O)C1C(=O)OC1OCCC1 AEMMZSXVHMZEOZ-UHFFFAOYSA-N 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- DYHSDKLCOJIUFX-UHFFFAOYSA-N tert-butoxycarbonyl anhydride Chemical group CC(C)(C)OC(=O)OC(=O)OC(C)(C)C DYHSDKLCOJIUFX-UHFFFAOYSA-N 0.000 description 1
- FGXVIZZLPGMPQG-UHFFFAOYSA-N tert-butyl (4-ethenylcyclohexyl) carbonate Chemical compound CC(C)(C)OC(=O)OC1CCC(C=C)CC1 FGXVIZZLPGMPQG-UHFFFAOYSA-N 0.000 description 1
- RRURGBXPCZECPH-UHFFFAOYSA-N tert-butyl 1-ethenyl-2-oxo-4-propylpiperidine-3-carboxylate Chemical compound CCCC1CCN(C=C)C(=O)C1C(=O)OC(C)(C)C RRURGBXPCZECPH-UHFFFAOYSA-N 0.000 description 1
- IXYVWUZGHRMNOP-UHFFFAOYSA-N tert-butyl 1-ethenyl-2-oxo-4-propylpyrrolidine-3-carboxylate Chemical compound CCCC1CN(C=C)C(=O)C1C(=O)OC(C)(C)C IXYVWUZGHRMNOP-UHFFFAOYSA-N 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
- XTXNWQHMMMPKKO-UHFFFAOYSA-N tert-butyl 2-phenylethenyl carbonate Chemical compound CC(C)(C)OC(=O)OC=CC1=CC=CC=C1 XTXNWQHMMMPKKO-UHFFFAOYSA-N 0.000 description 1
- XKXIQBVKMABYQJ-UHFFFAOYSA-M tert-butyl carbonate Chemical compound CC(C)(C)OC([O-])=O XKXIQBVKMABYQJ-UHFFFAOYSA-M 0.000 description 1
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
- C08F226/06—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F230/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
- C08F230/04—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
- C08F230/08—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960068910A KR100197673B1 (en) | 1996-12-20 | 1996-12-20 | Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom |
| KR19960068910 | 1996-12-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL1005689A1 NL1005689A1 (nl) | 1998-06-23 |
| NL1005689C2 true NL1005689C2 (nl) | 1999-04-09 |
Family
ID=19489702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL1005689A NL1005689C2 (nl) | 1996-12-20 | 1997-04-01 | Copolymeren die N-vinyllactamderivaten bevatten, methoden ter bereiding daarvan en daarvan gemaakte fotoresistmaterialen. |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6051678A (fr) |
| JP (1) | JP3269789B2 (fr) |
| KR (1) | KR100197673B1 (fr) |
| CN (1) | CN1120185C (fr) |
| DE (1) | DE19721694B4 (fr) |
| FR (1) | FR2757526B1 (fr) |
| GB (1) | GB2320500B (fr) |
| NL (1) | NL1005689C2 (fr) |
| TW (1) | TW367430B (fr) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4366766B2 (ja) | 1999-04-30 | 2009-11-18 | 住友化学株式会社 | Ｏ−置換ビニルフェノール単位を有する重合体及びそれのレジストへの使用 |
| US7138218B2 (en) * | 2001-12-18 | 2006-11-21 | Hynix Semiconductor Inc. | Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator |
| US8119392B2 (en) * | 2003-05-02 | 2012-02-21 | The University Of North Carolina At Charlotte | Biocompatible resists |
| US7338742B2 (en) * | 2003-10-08 | 2008-03-04 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
| US7270937B2 (en) * | 2003-10-17 | 2007-09-18 | Hynix Semiconductor Inc. | Over-coating composition for photoresist and process for forming photoresist pattern using the same |
| KR100680405B1 (ko) * | 2003-11-19 | 2007-02-08 | 주식회사 하이닉스반도체 | Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법 |
| US7745339B2 (en) * | 2006-02-24 | 2010-06-29 | Hynix Semiconductor Inc. | Method for forming fine pattern of semiconductor device |
| KR100694412B1 (ko) * | 2006-02-24 | 2007-03-12 | 주식회사 하이닉스반도체 | 반도체소자의 미세패턴 형성방법 |
| KR100849800B1 (ko) * | 2006-07-20 | 2008-07-31 | 주식회사 하이닉스반도체 | 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법 |
| US8313876B2 (en) * | 2006-07-20 | 2012-11-20 | Hynix Semiconductor Inc. | Exposure mask and method for manufacturing semiconductor device using the same |
| US7959818B2 (en) * | 2006-09-12 | 2011-06-14 | Hynix Semiconductor Inc. | Method for forming a fine pattern of a semiconductor device |
| US7790357B2 (en) * | 2006-09-12 | 2010-09-07 | Hynix Semiconductor Inc. | Method of forming fine pattern of semiconductor device |
| KR100861173B1 (ko) | 2006-12-01 | 2008-09-30 | 주식회사 하이닉스반도체 | 액침 노광 공정을 이용한 반도체 소자의 패턴 형성 방법 |
| KR20080057562A (ko) * | 2006-12-20 | 2008-06-25 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
| US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
| JP5069494B2 (ja) * | 2007-05-01 | 2012-11-07 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 |
| KR100919564B1 (ko) * | 2007-06-29 | 2009-10-01 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
| KR100876816B1 (ko) * | 2007-06-29 | 2009-01-07 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
| WO2009152276A2 (fr) | 2008-06-10 | 2009-12-17 | University Of North Carolina At Charlotte | Générateurs de photoacides et résists lithographiques les comprenant |
| US7745077B2 (en) * | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
| KR101037528B1 (ko) * | 2008-10-16 | 2011-05-26 | 주식회사 하이닉스반도체 | 반도체 소자의 패턴 형성 방법 |
| JP5898521B2 (ja) * | 2011-02-25 | 2016-04-06 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP6182864B2 (ja) * | 2012-01-17 | 2017-08-23 | 住友化学株式会社 | レジストパターンの製造方法 |
| KR200474218Y1 (ko) * | 2012-05-10 | 2014-08-28 | (주)신성이지텍 | 벽면 장식재 고정 프레임 조립체 |
| JP6283477B2 (ja) * | 2012-06-25 | 2018-02-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | アミド成分を含むフォトレジスト |
| CN113835296A (zh) * | 2021-09-28 | 2021-12-24 | 之江实验室 | 一种飞秒激光直写光刻胶组合物 |
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| US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| EP0528203A1 (fr) * | 1991-08-09 | 1993-02-24 | Hoechst Aktiengesellschaft | Composition sensible aux radiations contenant un liant polymère avec des groupements carboxamides alpha,beta insaturés |
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| DE2456807C3 (de) * | 1974-11-30 | 1981-04-09 | Basf Ag, 6700 Ludwigshafen | Verfahren zur Herstellung von Polymerisaten des Vinylpyrrolidons |
| JPS5280022A (en) | 1975-12-26 | 1977-07-05 | Fuji Photo Film Co Ltd | Light solubilizable composition |
| GB2012285B (en) * | 1978-01-10 | 1982-09-15 | Goodyear Tire & Rubber | Water reducible coating compostions contaoning copolymers of vinyl pyrrolidone and unsaturated carboxylic acid and containing a solvent and a volatile amine |
| US4164614A (en) * | 1978-06-21 | 1979-08-14 | Eastman Kodak Company | Terpolymer compositions useful as pressure-sensitive adhesives |
| DE3366523D1 (en) * | 1982-04-06 | 1986-11-06 | Nitto Kasei Co Ltd | Anti-fouling agent |
| US4456741A (en) * | 1983-01-17 | 1984-06-26 | Eastman Kodak Company | Terpolymer compositions useful as pressure-sensitive adhesives |
| JPS63175085A (ja) * | 1987-01-14 | 1988-07-19 | Mitsubishi Rayon Co Ltd | 歯科用接着剤組成物 |
| DE3842183A1 (de) * | 1988-12-15 | 1990-06-21 | Basf Ag | Copolymerisate auf basis von tert.-butylacrylat und/oder tert.-butylmethacrylat |
| JPH063822A (ja) * | 1992-06-23 | 1994-01-14 | Sekisui Chem Co Ltd | 立体画像表示盤の製造方法 |
| JP3251644B2 (ja) * | 1992-07-09 | 2002-01-28 | 三菱製紙株式会社 | 減感インキ |
| KR0178475B1 (ko) * | 1995-09-14 | 1999-03-20 | 윤덕용 | 신규한 n-비닐락탐 유도체 및 그의 중합체 |
-
1996
- 1996-12-20 KR KR1019960068910A patent/KR100197673B1/ko not_active IP Right Cessation
-
1997
- 1997-03-13 US US08/816,305 patent/US6051678A/en not_active Expired - Lifetime
- 1997-03-26 TW TW086103829A patent/TW367430B/zh not_active IP Right Cessation
- 1997-03-28 FR FR9703888A patent/FR2757526B1/fr not_active Expired - Fee Related
- 1997-04-01 NL NL1005689A patent/NL1005689C2/nl not_active IP Right Cessation
- 1997-05-01 GB GB9708958A patent/GB2320500B/en not_active Expired - Fee Related
- 1997-05-23 DE DE19721694A patent/DE19721694B4/de not_active Expired - Fee Related
- 1997-06-03 JP JP14530797A patent/JP3269789B2/ja not_active Expired - Fee Related
- 1997-08-08 CN CN97116326A patent/CN1120185C/zh not_active Expired - Fee Related
-
1998
- 1998-10-08 US US09/168,067 patent/US6262222B1/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| EP0528203A1 (fr) * | 1991-08-09 | 1993-02-24 | Hoechst Aktiengesellschaft | Composition sensible aux radiations contenant un liant polymère avec des groupements carboxamides alpha,beta insaturés |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10182754A (ja) | 1998-07-07 |
| KR19980050132A (ko) | 1998-09-15 |
| FR2757526B1 (fr) | 2000-01-14 |
| GB9708958D0 (en) | 1997-06-25 |
| KR100197673B1 (en) | 1999-06-15 |
| JP3269789B2 (ja) | 2002-04-02 |
| FR2757526A1 (fr) | 1998-06-26 |
| TW367430B (en) | 1999-08-21 |
| DE19721694B4 (de) | 2006-03-09 |
| CN1185449A (zh) | 1998-06-24 |
| GB2320500A (en) | 1998-06-24 |
| NL1005689A1 (nl) | 1998-06-23 |
| US6262222B1 (en) | 2001-07-17 |
| GB2320500B (en) | 2001-07-25 |
| CN1120185C (zh) | 2003-09-03 |
| DE19721694A1 (de) | 1998-06-25 |
| US6051678A (en) | 2000-04-18 |
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