KR100197673B1 - Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom - Google Patents

Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom Download PDF

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Publication number
KR100197673B1
KR100197673B1 KR1019960068910A KR19960068910A KR100197673B1 KR 100197673 B1 KR100197673 B1 KR 100197673B1 KR 1019960068910 A KR1019960068910 A KR 1019960068910A KR 19960068910 A KR19960068910 A KR 19960068910A KR 100197673 B1 KR100197673 B1 KR 100197673B1
Authority
KR
South Korea
Prior art keywords
photoresists
therefrom
preparation methods
copolymers containing
vinyllactam derivatives
Prior art date
Application number
KR1019960068910A
Other languages
English (en)
Other versions
KR19980050132A (ko
Inventor
Jin-Baek Kim
Min-Ho Jung
Jong-Ho Jung
Original Assignee
Hyundai Electronics Ind
Korea Advanced Inst Sci & Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind, Korea Advanced Inst Sci & Tech filed Critical Hyundai Electronics Ind
Priority to KR1019960068910A priority Critical patent/KR100197673B1/ko
Priority to US08/816,305 priority patent/US6051678A/en
Priority to TW086103829A priority patent/TW367430B/zh
Priority to FR9703888A priority patent/FR2757526B1/fr
Priority to NL1005689A priority patent/NL1005689C2/nl
Priority to GB9708958A priority patent/GB2320500B/en
Priority to DE19721694A priority patent/DE19721694B4/de
Priority to JP14530797A priority patent/JP3269789B2/ja
Priority to CN97116326A priority patent/CN1120185C/zh
Publication of KR19980050132A publication Critical patent/KR19980050132A/ko
Priority to US09/168,067 priority patent/US6262222B1/en
Application granted granted Critical
Publication of KR100197673B1 publication Critical patent/KR100197673B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F226/06—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F230/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F230/04—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • C08F230/08—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1019960068910A 1996-12-20 1996-12-20 Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom KR100197673B1 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
KR1019960068910A KR100197673B1 (en) 1996-12-20 1996-12-20 Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom
US08/816,305 US6051678A (en) 1996-12-20 1997-03-13 Copolymers containing N-vinyllactam derivatives, preparation methods thereof and photoresists therefrom
TW086103829A TW367430B (en) 1996-12-20 1997-03-26 Copolymers containing N-vinyllactam derivatives, preparation methods thereof and photoresist composition therefrom
FR9703888A FR2757526B1 (fr) 1996-12-20 1997-03-28 Copolymeres contenant des derives de n-vinyllactame, leurs procedes de preparation et photoresists qui en son faits
NL1005689A NL1005689C2 (nl) 1996-12-20 1997-04-01 Copolymeren die N-vinyllactamderivaten bevatten, methoden ter bereiding daarvan en daarvan gemaakte fotoresistmaterialen.
GB9708958A GB2320500B (en) 1996-12-20 1997-05-01 Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom
DE19721694A DE19721694B4 (de) 1996-12-20 1997-05-23 N-Vinyllactamderivate enthaltende Copolymere, Herstellungsverfahren hierfür und hieraus hergestellte Photoresists
JP14530797A JP3269789B2 (ja) 1996-12-20 1997-06-03 Ｎ−ビニルラクタム誘導体のランダム共重合体およびこの共重合体を含有するフォトレジスト
CN97116326A CN1120185C (zh) 1996-12-20 1997-08-08 含n－乙烯基内酰胺衍生物的共聚物、其制法及光致抗蚀剂
US09/168,067 US6262222B1 (en) 1996-12-20 1998-10-08 Copolymers containing N-vinyllactam derivatives, preparation methods thereof and photoresists therefrom

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960068910A KR100197673B1 (en) 1996-12-20 1996-12-20 Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom

Publications (2)

Publication Number Publication Date
KR19980050132A KR19980050132A (ko) 1998-09-15
KR100197673B1 true KR100197673B1 (en) 1999-06-15

Family

ID=19489702

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960068910A KR100197673B1 (en) 1996-12-20 1996-12-20 Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom

Country Status (9)

Country Link
US (2) US6051678A (ko)
JP (1) JP3269789B2 (ko)
KR (1) KR100197673B1 (ko)
CN (1) CN1120185C (ko)
DE (1) DE19721694B4 (ko)
FR (1) FR2757526B1 (ko)
GB (1) GB2320500B (ko)
NL (1) NL1005689C2 (ko)
TW (1) TW367430B (ko)

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JP4366766B2 (ja) 1999-04-30 2009-11-18 住友化学株式会社 Ｏ−置換ビニルフェノール単位を有する重合体及びそれのレジストへの使用
US7138218B2 (en) * 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
WO2004099373A2 (en) * 2003-05-02 2004-11-18 University Of North Carolina At Charlotte Biocompatible resists
US7338742B2 (en) * 2003-10-08 2008-03-04 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7270937B2 (en) * 2003-10-17 2007-09-18 Hynix Semiconductor Inc. Over-coating composition for photoresist and process for forming photoresist pattern using the same
KR100680405B1 (ko) * 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법
US7745339B2 (en) * 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
KR100694412B1 (ko) * 2006-02-24 2007-03-12 주식회사 하이닉스반도체 반도체소자의 미세패턴 형성방법
KR100849800B1 (ko) * 2006-07-20 2008-07-31 주식회사 하이닉스반도체 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법
US8313876B2 (en) * 2006-07-20 2012-11-20 Hynix Semiconductor Inc. Exposure mask and method for manufacturing semiconductor device using the same
US7790357B2 (en) * 2006-09-12 2010-09-07 Hynix Semiconductor Inc. Method of forming fine pattern of semiconductor device
US7959818B2 (en) * 2006-09-12 2011-06-14 Hynix Semiconductor Inc. Method for forming a fine pattern of a semiconductor device
KR100861173B1 (ko) 2006-12-01 2008-09-30 주식회사 하이닉스반도체 액침 노광 공정을 이용한 반도체 소자의 패턴 형성 방법
KR20080057562A (ko) * 2006-12-20 2008-06-25 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
KR100919564B1 (ko) * 2007-06-29 2009-10-01 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
KR100876816B1 (ko) * 2007-06-29 2009-01-07 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
US8685616B2 (en) 2008-06-10 2014-04-01 University Of North Carolina At Charlotte Photoacid generators and lithographic resists comprising the same
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
KR101037528B1 (ko) * 2008-10-16 2011-05-26 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
JP5898521B2 (ja) * 2011-02-25 2016-04-06 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6182864B2 (ja) * 2012-01-17 2017-08-23 住友化学株式会社 レジストパターンの製造方法
KR200474218Y1 (ko) * 2012-05-10 2014-08-28 (주)신성이지텍 벽면 장식재 고정 프레임 조립체
JP6283477B2 (ja) * 2012-06-25 2018-02-21 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ アミド成分を含むフォトレジスト
CN113835296A (zh) * 2021-09-28 2021-12-24 之江实验室 一种飞秒激光直写光刻胶组合物

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Also Published As

Publication number Publication date
NL1005689C2 (nl) 1999-04-09
US6262222B1 (en) 2001-07-17
GB2320500A (en) 1998-06-24
FR2757526A1 (fr) 1998-06-26
US6051678A (en) 2000-04-18
TW367430B (en) 1999-08-21
CN1120185C (zh) 2003-09-03
FR2757526B1 (fr) 2000-01-14
JP3269789B2 (ja) 2002-04-02
DE19721694A1 (de) 1998-06-25
JPH10182754A (ja) 1998-07-07
KR19980050132A (ko) 1998-09-15
DE19721694B4 (de) 2006-03-09
GB2320500B (en) 2001-07-25
NL1005689A1 (nl) 1998-06-23
GB9708958D0 (en) 1997-06-25
CN1185449A (zh) 1998-06-24

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