FR2757526B1 - Copolymeres contenant des derives de n-vinyllactame, leurs procedes de preparation et photoresists qui en son faits - Google Patents

Copolymeres contenant des derives de n-vinyllactame, leurs procedes de preparation et photoresists qui en son faits

Info

Publication number
FR2757526B1
FR2757526B1 FR9703888A FR9703888A FR2757526B1 FR 2757526 B1 FR2757526 B1 FR 2757526B1 FR 9703888 A FR9703888 A FR 9703888A FR 9703888 A FR9703888 A FR 9703888A FR 2757526 B1 FR2757526 B1 FR 2757526B1
Authority
FR
France
Prior art keywords
photoresists
processes
preparation
copolymers containing
vinyllactam derivatives
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9703888A
Other languages
English (en)
Other versions
FR2757526A1 (fr
Inventor
Jin Baek Kim
Min Ho Jung
Jong Ho Cheong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of FR2757526A1 publication Critical patent/FR2757526A1/fr
Application granted granted Critical
Publication of FR2757526B1 publication Critical patent/FR2757526B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F226/06—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F230/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F230/04—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • C08F230/08—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
FR9703888A 1996-12-20 1997-03-28 Copolymeres contenant des derives de n-vinyllactame, leurs procedes de preparation et photoresists qui en son faits Expired - Fee Related FR2757526B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960068910A KR100197673B1 (en) 1996-12-20 1996-12-20 Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom

Publications (2)

Publication Number Publication Date
FR2757526A1 FR2757526A1 (fr) 1998-06-26
FR2757526B1 true FR2757526B1 (fr) 2000-01-14

Family

ID=19489702

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9703888A Expired - Fee Related FR2757526B1 (fr) 1996-12-20 1997-03-28 Copolymeres contenant des derives de n-vinyllactame, leurs procedes de preparation et photoresists qui en son faits

Country Status (9)

Country Link
US (2) US6051678A (fr)
JP (1) JP3269789B2 (fr)
KR (1) KR100197673B1 (fr)
CN (1) CN1120185C (fr)
DE (1) DE19721694B4 (fr)
FR (1) FR2757526B1 (fr)
GB (1) GB2320500B (fr)
NL (1) NL1005689C2 (fr)
TW (1) TW367430B (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4366766B2 (ja) 1999-04-30 2009-11-18 住友化学株式会社 Ｏ−置換ビニルフェノール単位を有する重合体及びそれのレジストへの使用
US7138218B2 (en) * 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
WO2004099373A2 (fr) * 2003-05-02 2004-11-18 University Of North Carolina At Charlotte Reserves biocompatibles
US7338742B2 (en) * 2003-10-08 2008-03-04 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7270937B2 (en) * 2003-10-17 2007-09-18 Hynix Semiconductor Inc. Over-coating composition for photoresist and process for forming photoresist pattern using the same
KR100680405B1 (ko) * 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법
KR100694412B1 (ko) * 2006-02-24 2007-03-12 주식회사 하이닉스반도체 반도체소자의 미세패턴 형성방법
US7745339B2 (en) * 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
KR100849800B1 (ko) * 2006-07-20 2008-07-31 주식회사 하이닉스반도체 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법
US8313876B2 (en) * 2006-07-20 2012-11-20 Hynix Semiconductor Inc. Exposure mask and method for manufacturing semiconductor device using the same
US7790357B2 (en) * 2006-09-12 2010-09-07 Hynix Semiconductor Inc. Method of forming fine pattern of semiconductor device
US7959818B2 (en) * 2006-09-12 2011-06-14 Hynix Semiconductor Inc. Method for forming a fine pattern of a semiconductor device
KR100861173B1 (ko) 2006-12-01 2008-09-30 주식회사 하이닉스반도체 액침 노광 공정을 이용한 반도체 소자의 패턴 형성 방법
KR20080057562A (ko) * 2006-12-20 2008-06-25 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
KR100919564B1 (ko) * 2007-06-29 2009-10-01 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
KR100876816B1 (ko) * 2007-06-29 2009-01-07 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
WO2009152276A2 (fr) 2008-06-10 2009-12-17 University Of North Carolina At Charlotte Générateurs de photoacides et résists lithographiques les comprenant
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
KR101037528B1 (ko) * 2008-10-16 2011-05-26 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
JP5898521B2 (ja) * 2011-02-25 2016-04-06 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6182864B2 (ja) * 2012-01-17 2017-08-23 住友化学株式会社 レジストパターンの製造方法
KR200474218Y1 (ko) * 2012-05-10 2014-08-28 (주)신성이지텍 벽면 장식재 고정 프레임 조립체
JP6283477B2 (ja) * 2012-06-25 2018-02-21 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ アミド成分を含むフォトレジスト
CN113835296A (zh) * 2021-09-28 2021-12-24 之江实验室 一种飞秒激光直写光刻胶组合物

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2456807C3 (de) * 1974-11-30 1981-04-09 Basf Ag, 6700 Ludwigshafen Verfahren zur Herstellung von Polymerisaten des Vinylpyrrolidons
JPS5280022A (en) 1975-12-26 1977-07-05 Fuji Photo Film Co Ltd Light solubilizable composition
GB2012285B (en) * 1978-01-10 1982-09-15 Goodyear Tire & Rubber Water reducible coating compostions contaoning copolymers of vinyl pyrrolidone and unsaturated carboxylic acid and containing a solvent and a volatile amine
US4164614A (en) * 1978-06-21 1979-08-14 Eastman Kodak Company Terpolymer compositions useful as pressure-sensitive adhesives
EP0091039B1 (fr) * 1982-04-06 1986-10-01 Nitto Kasei Co., Ltd. Agent antifouling
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4456741A (en) * 1983-01-17 1984-06-26 Eastman Kodak Company Terpolymer compositions useful as pressure-sensitive adhesives
JPS63175085A (ja) * 1987-01-14 1988-07-19 Mitsubishi Rayon Co Ltd 歯科用接着剤組成物
DE3842183A1 (de) * 1988-12-15 1990-06-21 Basf Ag Copolymerisate auf basis von tert.-butylacrylat und/oder tert.-butylmethacrylat
DE4126409A1 (de) * 1991-08-09 1993-02-11 Hoechst Ag Strahlungsempfindliches gemisch mit einem polymeren bindemittel mit einheiten aus (alpha)-(beta)-ungesaettigten carbonsaeuren
JPH063822A (ja) * 1992-06-23 1994-01-14 Sekisui Chem Co Ltd 立体画像表示盤の製造方法
JP3251644B2 (ja) * 1992-07-09 2002-01-28 三菱製紙株式会社 減感インキ
KR0178475B1 (ko) * 1995-09-14 1999-03-20 윤덕용 신규한 n-비닐락탐 유도체 및 그의 중합체

Also Published As

Publication number Publication date
GB2320500A (en) 1998-06-24
FR2757526A1 (fr) 1998-06-26
JPH10182754A (ja) 1998-07-07
KR19980050132A (ko) 1998-09-15
GB2320500B (en) 2001-07-25
TW367430B (en) 1999-08-21
GB9708958D0 (en) 1997-06-25
DE19721694A1 (de) 1998-06-25
US6262222B1 (en) 2001-07-17
NL1005689A1 (nl) 1998-06-23
KR100197673B1 (en) 1999-06-15
NL1005689C2 (nl) 1999-04-09
DE19721694B4 (de) 2006-03-09
CN1120185C (zh) 2003-09-03
CN1185449A (zh) 1998-06-24
US6051678A (en) 2000-04-18
JP3269789B2 (ja) 2002-04-02

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Effective date: 20101130