MY163132A - Cleaning formulations - Google Patents

Cleaning formulations

Info

Publication number
MY163132A
MY163132A MYPI2013701982A MYPI2013701982A MY163132A MY 163132 A MY163132 A MY 163132A MY PI2013701982 A MYPI2013701982 A MY PI2013701982A MY PI2013701982 A MYPI2013701982 A MY PI2013701982A MY 163132 A MY163132 A MY 163132A
Authority
MY
Malaysia
Prior art keywords
post
etch
copper
residue
water
Prior art date
Application number
MYPI2013701982A
Other languages
English (en)
Inventor
Lee Yi-Chia
Bhaskara Rao Madhukar
Banerjee Gautam
Dar Liu Wen
Wu Aiping
Inaoka Seiji
Original Assignee
Versum Mat Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Mat Us Llc filed Critical Versum Mat Us Llc
Publication of MY163132A publication Critical patent/MY163132A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
MYPI2013701982A 2012-10-23 2013-10-21 Cleaning formulations MY163132A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261717152P 2012-10-23 2012-10-23
US201361817134P 2013-04-29 2013-04-29
US14/010,748 US9536730B2 (en) 2012-10-23 2013-08-27 Cleaning formulations

Publications (1)

Publication Number Publication Date
MY163132A true MY163132A (en) 2017-08-15

Family

ID=50484217

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2013701982A MY163132A (en) 2012-10-23 2013-10-21 Cleaning formulations

Country Status (7)

Country Link
US (1) US9536730B2 (enExample)
JP (3) JP2014084464A (enExample)
KR (1) KR101557979B1 (enExample)
CN (1) CN103777475B (enExample)
MY (1) MY163132A (enExample)
SG (1) SG2013076922A (enExample)
TW (1) TWI563077B (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2828371A4 (en) * 2012-03-18 2015-10-14 Entegris Inc AFTER CMP RECEPTURE WITH IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE
TWI572711B (zh) * 2012-10-16 2017-03-01 盟智科技股份有限公司 半導體製程用的清洗組成物及清洗方法
KR102153113B1 (ko) * 2013-10-21 2020-09-08 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 잔류물 제거용 세정 제형
KR20230129193A (ko) 2013-12-06 2023-09-06 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 잔류물 제거용 세정 제형
US20150203753A1 (en) * 2014-01-17 2015-07-23 Nanya Technology Corporation Liquid etchant composition, and etching process in capacitor process of dram using the same
US9957469B2 (en) * 2014-07-14 2018-05-01 Versum Materials Us, Llc Copper corrosion inhibition system
JP6501492B2 (ja) 2014-10-31 2019-04-17 関東化學株式会社 フォトレジスト残渣および／またはポリマー残渣を除去するための組成物
KR102347656B1 (ko) * 2014-12-11 2022-01-07 동우 화인켐 주식회사 포토레지스트 애싱 후 잔류물 제거를 위한 세정제 조성물
US9828574B2 (en) * 2015-01-13 2017-11-28 Cabot Microelectronics Corporation Cleaning composition and method for cleaning semiconductor wafers after CMP
CN104570629B (zh) * 2015-02-14 2016-04-13 江阴江化微电子材料股份有限公司 —种液晶面板铜膜光阻水系剥离液
CN113214920A (zh) * 2015-03-31 2021-08-06 弗萨姆材料美国有限责任公司 清洁制剂
TWI819694B (zh) * 2015-07-14 2023-10-21 美商富士軟片電子材料美國股份有限公司 清潔組成物及其使用方法
US10233413B2 (en) * 2015-09-23 2019-03-19 Versum Materials Us, Llc Cleaning formulations
US10400167B2 (en) * 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same
US11035044B2 (en) 2017-01-23 2021-06-15 Versum Materials Us, Llc Etching solution for tungsten and GST films
KR102417180B1 (ko) * 2017-09-29 2022-07-05 삼성전자주식회사 Duv용 포토레지스트 조성물, 패턴 형성 방법 및 반도체 소자의 제조 방법
EP3480288A1 (en) * 2017-11-07 2019-05-08 Henkel AG & Co. KGaA Fluoride based cleaning composition
JP7330972B2 (ja) * 2017-12-08 2023-08-22 ビーエーエスエフ ソシエタス・ヨーロピア 半導体基板からエッチング後または灰化後の残留物を除去するための洗浄剤組成物、およびそれに対応する製造方法
CN109976108A (zh) * 2017-12-27 2019-07-05 安集微电子（上海）有限公司 一种用于半导体的清洗液
SG11202004420QA (en) * 2018-01-25 2020-06-29 Merck Patent Gmbh Photoresist remover compositions
US10752867B2 (en) * 2018-03-28 2020-08-25 Fujifilm Electronic Materials U.S.A., Inc. Cleaning compositions
KR102952187B1 (ko) 2019-06-19 2026-04-14 버슘머트리얼즈 유에스, 엘엘씨 반도체 기판용 세정 조성물
WO2021011515A1 (en) * 2019-07-15 2021-01-21 Versum Materials Us, Llc Compositions for removing etch residues, methods of using and use thereof
WO2021054010A1 (ja) * 2019-09-18 2021-03-25 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄液、洗浄方法
CN114450388B (zh) * 2019-09-27 2025-03-21 弗萨姆材料美国有限责任公司 用于去除蚀刻残留物的组合物及其使用方法和用途
JP7419905B2 (ja) * 2020-03-19 2024-01-23 日油株式会社 回路基板用樹脂膜剥離剤
WO2021201047A1 (ja) * 2020-03-31 2021-10-07 日産化学株式会社 洗浄剤組成物及び加工された半導体基板の製造方法
KR20220012521A (ko) * 2020-07-23 2022-02-04 주식회사 케이씨텍 세정액 조성물 및 이를 이용한 세정 방법
WO2022024609A1 (ja) 2020-07-30 2022-02-03 富士フイルム株式会社 処理液、基板の洗浄方法
KR102782910B1 (ko) * 2020-12-10 2025-03-14 동우 화인켐 주식회사 금속 함유 레지스트용 신너 조성물
TWI800025B (zh) * 2021-10-07 2023-04-21 德揚科技股份有限公司 清洗水溶液
WO2023136081A1 (ja) 2022-01-17 2023-07-20 富士フイルム株式会社 薬液、修飾基板の製造方法、積層体の製造方法
CN117903887A (zh) * 2023-12-07 2024-04-19 湖北兴福电子材料股份有限公司 一种蚀刻后清洗液
WO2026112755A1 (en) * 2024-11-26 2026-06-04 Dow Global Technologies Llc Stripping solvent for photolithography

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US20040018949A1 (en) 1990-11-05 2004-01-29 Wai Mun Lee Semiconductor process residue removal composition and process
JP3160344B2 (ja) 1991-01-25 2001-04-25 アシュランド インコーポレーテッド 有機ストリッピング組成物
US5746837A (en) 1992-05-27 1998-05-05 Ppg Industries, Inc. Process for treating an aluminum can using a mobility enhancer
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US6326130B1 (en) 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
ATE312895T1 (de) 1996-07-25 2005-12-15 Dupont Air Prod Nanomaterials Zusammensetzung und verfahren zum chemisch- mechanischen polieren
US6896826B2 (en) 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6755989B2 (en) 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US20030022800A1 (en) * 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
MY143399A (en) 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
MY131912A (en) 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
EP1407326A1 (en) * 2001-07-13 2004-04-14 Ekc Technology, Inc. Sulfoxide pyrrolid(in)one alkanolamine stripping and cleaning composition
JP2003241400A (ja) * 2002-02-22 2003-08-27 Nippon Zeon Co Ltd 剥離液及びそれを用いたレジスト剥離方法
JP4252758B2 (ja) 2002-03-22 2009-04-08 関東化学株式会社 フォトレジスト残渣除去液組成物
US6773873B2 (en) 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
AU2003225178A1 (en) * 2002-04-24 2003-11-10 Ekc Technology, Inc. Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US6677286B1 (en) 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
JP4443864B2 (ja) 2002-07-12 2010-03-31 株式会社ルネサステクノロジ レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法
JP2004277576A (ja) 2003-03-17 2004-10-07 Daikin Ind Ltd エッチング用又は洗浄用の溶液の製造法
US7399365B2 (en) 2003-04-18 2008-07-15 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
WO2004100245A1 (en) 2003-05-02 2004-11-18 Ekc Technology, Inc. Removal of post-etch residues in semiconductor processing
JP2005209953A (ja) * 2004-01-23 2005-08-04 Tokyo Ohka Kogyo Co Ltd 剥離洗浄液、該剥離洗浄液を用いた半導体基板洗浄方法および金属配線形成方法
CN1918698B (zh) 2004-02-09 2010-04-07 三菱化学株式会社 半导体装置用基板的洗涤液及洗涤方法
EP1720966B1 (en) * 2004-03-01 2010-11-17 Mallinckrodt Baker, Inc. Nanoelectronic and microelectronic cleaning compositions
US9217929B2 (en) 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof
JP4463054B2 (ja) * 2004-09-17 2010-05-12 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いた基板の処理方法
EP1701218A3 (en) 2005-03-11 2008-10-15 Rohm and Haas Electronic Materials LLC Polymer remover
JP2006261432A (ja) * 2005-03-17 2006-09-28 Nissan Chem Ind Ltd ヒドラジンを含む半導体用洗浄液組成物及び洗浄方法
WO2006110645A2 (en) 2005-04-11 2006-10-19 Advanced Technology Materials, Inc. Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices
JPWO2006129549A1 (ja) 2005-06-01 2008-12-25 日産化学工業株式会社 ホスホン酸及びアスコルビン酸を含む半導体用洗浄液組成物及び洗浄方法
TWI408212B (zh) * 2005-06-07 2013-09-11 尖端科技材料公司 金屬及介電相容犧牲抗反射塗層清洗及移除組成物
US7700533B2 (en) 2005-06-23 2010-04-20 Air Products And Chemicals, Inc. Composition for removal of residue comprising cationic salts and methods using same
TWI339780B (en) 2005-07-28 2011-04-01 Rohm & Haas Elect Mat Stripper
TW200722505A (en) 2005-09-30 2007-06-16 Rohm & Haas Elect Mat Stripper
JP2009512195A (ja) * 2005-10-05 2009-03-19 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド ゲートスペーサ酸化物材料を選択的にエッチするための組成物および方法
US8772214B2 (en) * 2005-10-14 2014-07-08 Air Products And Chemicals, Inc. Aqueous cleaning composition for removing residues and method using same
WO2007120259A2 (en) 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
JP2007200944A (ja) * 2006-01-23 2007-08-09 Tokuyama Corp 基板洗浄液
US20070179072A1 (en) * 2006-01-30 2007-08-02 Rao Madhukar B Cleaning formulations
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
EP2108039A2 (en) 2006-12-21 2009-10-14 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
US7879783B2 (en) 2007-01-11 2011-02-01 Air Products And Chemicals, Inc. Cleaning composition for semiconductor substrates
JP5203637B2 (ja) 2007-05-07 2013-06-05 イー．ケー．シー．テクノロジー．インコーポレーテッド レジスト、エッチング残渣、及び金属酸化物をアルミニウム及びアルミニウム銅合金を有する基板から除去する方法及び組成物
US8062429B2 (en) * 2007-10-29 2011-11-22 Ekc Technology, Inc. Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
TW200925268A (en) 2007-12-06 2009-06-16 Mallinckrodt Baker Inc Fluoride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction
EP2268765A4 (en) 2008-03-07 2011-10-26 Advanced Tech Materials UNSELECTIVE OXIDIZE WET CLEANING AGENT AND USE
US7687447B2 (en) * 2008-03-13 2010-03-30 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning composition containing aminobenzenesulfonic acid
US8361237B2 (en) 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
KR20110127244A (ko) * 2009-03-11 2011-11-24 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 상의 잔류물을 제거하기 위한 세정 조성물
US8889609B2 (en) 2011-03-16 2014-11-18 Air Products And Chemicals, Inc. Cleaning formulations and method of using the cleaning formulations

Also Published As

Publication number Publication date
JP6546080B2 (ja) 2019-07-17
CN103777475B (zh) 2018-09-21
US20140109931A1 (en) 2014-04-24
JP2014084464A (ja) 2014-05-12
TW201416436A (zh) 2014-05-01
CN103777475A (zh) 2014-05-07
TWI563077B (en) 2016-12-21
US9536730B2 (en) 2017-01-03
SG2013076922A (en) 2014-05-29
JP2018164091A (ja) 2018-10-18
JP2016040382A (ja) 2016-03-24
KR20140051796A (ko) 2014-05-02
KR101557979B1 (ko) 2015-10-06

Similar Documents

Publication Publication Date Title
WO2012051380A3 (en) Composition for and method of suppressing titanium nitride corrosion
WO2007120259A3 (en) Formulations for removing copper-containing post-etch residue from microelectronic devices
WO2013173743A3 (en) Aqueous clean solution with low copper etch rate for organic residue removal improvement
TW200940706A (en) Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
SG10201807214WA (en) Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
IL265773B (en) Cleaning agents for removing residues on semiconductor substrates
TW200942609A (en) Compositions for removal of metal hard mask etching residues from a semiconductor substrate
BR112012029278A2 (pt) método para tratar e recuperar compostos de fosfato de água residual contendo fosfato
WO2015053800A3 (en) Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper
MY173184A (en) Tin hard mask and etch residue removal
SG10201906909VA (en) COMPOSITION FOR TiN HARD MASK REMOVAL AND ETCH RESIDUE CLEANING
MY165756A (en) SEMI-AQUEOUS POLYMER REMOVAL COMPOSITIONS WITH ENHANCED COMPATIBILITY TO COPPER, TUNGSTEN, AND POROUS LOW-k DIELECTRICS
TW200602817A (en) Composition for stripping and cleaning and use thereof
SG168509A1 (en) Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
EP3027709A4 (en) AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY
TWI563076B (en) Aqueous, nitrogen-free cleaning composition and its use for removing residues and contaminants from semiconductor substrates suitable for manufacturing microelectronic devices
MY175104A (en) Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
WO2012174518A3 (en) Compositions and methods for selectively etching silicon nitride
WO2010048139A3 (en) Copper cleaning and protection formulations
TW200730621A (en) Oxidizing aqueous cleaner for the removal of post-etch residues
TW200728456A (en) Cleaning formulations
WO2012011020A3 (en) Aqueous alkaline cleaning compositions and methods of their use
WO2012097143A3 (en) Formulations for the removal of particles generated by cerium- containing solutions
TW200718775A (en) Composition and method for removing thick film photoresist
JP2011080042A5 (enExample)