TWI563077B - Cleaning formulations - Google Patents
Cleaning formulationsInfo
- Publication number
- TWI563077B TWI563077B TW102137823A TW102137823A TWI563077B TW I563077 B TWI563077 B TW I563077B TW 102137823 A TW102137823 A TW 102137823A TW 102137823 A TW102137823 A TW 102137823A TW I563077 B TWI563077 B TW I563077B
- Authority
- TW
- Taiwan
- Prior art keywords
- cleaning formulations
- formulations
- cleaning
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261717152P | 2012-10-23 | 2012-10-23 | |
US201361817134P | 2013-04-29 | 2013-04-29 | |
US14/010,748 US9536730B2 (en) | 2012-10-23 | 2013-08-27 | Cleaning formulations |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201416436A TW201416436A (zh) | 2014-05-01 |
TWI563077B true TWI563077B (en) | 2016-12-21 |
Family
ID=50484217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102137823A TWI563077B (en) | 2012-10-23 | 2013-10-18 | Cleaning formulations |
Country Status (7)
Country | Link |
---|---|
US (1) | US9536730B2 (zh) |
JP (3) | JP2014084464A (zh) |
KR (1) | KR101557979B1 (zh) |
CN (1) | CN103777475B (zh) |
MY (1) | MY163132A (zh) |
SG (1) | SG2013076922A (zh) |
TW (1) | TWI563077B (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013142250A1 (en) * | 2012-03-18 | 2013-09-26 | Advanced Technology Materials, Inc. | Post-cmp formulation having improved barrier layer compatibility and cleaning performance |
TWI572711B (zh) * | 2012-10-16 | 2017-03-01 | 盟智科技股份有限公司 | 半導體製程用的清洗組成物及清洗方法 |
JP6599322B2 (ja) * | 2013-10-21 | 2019-10-30 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 表面の残留物を除去するための洗浄配合物 |
US9562211B2 (en) | 2013-12-06 | 2017-02-07 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
US20150203753A1 (en) * | 2014-01-17 | 2015-07-23 | Nanya Technology Corporation | Liquid etchant composition, and etching process in capacitor process of dram using the same |
US9957469B2 (en) * | 2014-07-14 | 2018-05-01 | Versum Materials Us, Llc | Copper corrosion inhibition system |
JP6501492B2 (ja) | 2014-10-31 | 2019-04-17 | 関東化學株式会社 | フォトレジスト残渣および/またはポリマー残渣を除去するための組成物 |
KR102347656B1 (ko) * | 2014-12-11 | 2022-01-07 | 동우 화인켐 주식회사 | 포토레지스트 애싱 후 잔류물 제거를 위한 세정제 조성물 |
CN104570629B (zh) * | 2015-02-14 | 2016-04-13 | 江阴江化微电子材料股份有限公司 | —种液晶面板铜膜光阻水系剥离液 |
SG11201707787SA (en) * | 2015-03-31 | 2017-10-30 | Versum Mat Us Llc | Cleaning formulations |
US10233413B2 (en) * | 2015-09-23 | 2019-03-19 | Versum Materials Us, Llc | Cleaning formulations |
US10400167B2 (en) | 2015-11-25 | 2019-09-03 | Versum Materials Us, Llc | Etching compositions and methods for using same |
US11035044B2 (en) * | 2017-01-23 | 2021-06-15 | Versum Materials Us, Llc | Etching solution for tungsten and GST films |
KR102417180B1 (ko) * | 2017-09-29 | 2022-07-05 | 삼성전자주식회사 | Duv용 포토레지스트 조성물, 패턴 형성 방법 및 반도체 소자의 제조 방법 |
EP3480288A1 (en) * | 2017-11-07 | 2019-05-08 | Henkel AG & Co. KGaA | Fluoride based cleaning composition |
WO2019110681A1 (en) * | 2017-12-08 | 2019-06-13 | Basf Se | Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process |
CN109976108A (zh) * | 2017-12-27 | 2019-07-05 | 安集微电子(上海)有限公司 | 一种用于半导体的清洗液 |
KR102448220B1 (ko) * | 2018-01-25 | 2022-09-27 | 메르크 파텐트 게엠베하 | 포토레지스트 제거제 조성물 |
US10752867B2 (en) | 2018-03-28 | 2020-08-25 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning compositions |
WO2020257103A1 (en) * | 2019-06-19 | 2020-12-24 | Versum Materials Us, Llc | Cleaning composition for semiconductor substrates |
EP3999621A4 (en) * | 2019-07-15 | 2023-08-16 | Versum Materials US, LLC | COMPOSITIONS FOR REMOVING ETCH RESIDUES, METHODS OF USE THEREOF AND USE THEREOF |
US20220380705A1 (en) * | 2019-09-27 | 2022-12-01 | Versum Materials Us, Llc | Composition For Removing Etch Residues, Methods Of Using And Use Thereof |
JP7419905B2 (ja) * | 2020-03-19 | 2024-01-23 | 日油株式会社 | 回路基板用樹脂膜剥離剤 |
KR20220012521A (ko) | 2020-07-23 | 2022-02-04 | 주식회사 케이씨텍 | 세정액 조성물 및 이를 이용한 세정 방법 |
JPWO2022024609A1 (zh) | 2020-07-30 | 2022-02-03 | ||
TWI800025B (zh) * | 2021-10-07 | 2023-04-21 | 德揚科技股份有限公司 | 清洗水溶液 |
Citations (2)
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TW200306348A (en) * | 2002-03-25 | 2003-11-16 | Advanced Tech Materials | PH buffered compositions useful for cleaning residue from semiconductor substrates |
TW201024404A (en) * | 2008-12-17 | 2010-07-01 | Air Prod & Chem | Wet clean compositions for CoWP and porous dielectrics |
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-
2013
- 2013-08-27 US US14/010,748 patent/US9536730B2/en active Active
- 2013-10-16 SG SG2013076922A patent/SG2013076922A/en unknown
- 2013-10-18 TW TW102137823A patent/TWI563077B/zh active
- 2013-10-21 MY MYPI2013701982A patent/MY163132A/en unknown
- 2013-10-22 JP JP2013219489A patent/JP2014084464A/ja active Pending
- 2013-10-22 KR KR1020130125968A patent/KR101557979B1/ko active IP Right Grant
- 2013-10-23 CN CN201310504991.2A patent/CN103777475B/zh active Active
-
2015
- 2015-12-04 JP JP2015237884A patent/JP6546080B2/ja not_active Expired - Fee Related
-
2018
- 2018-05-23 JP JP2018098635A patent/JP2018164091A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200306348A (en) * | 2002-03-25 | 2003-11-16 | Advanced Tech Materials | PH buffered compositions useful for cleaning residue from semiconductor substrates |
TW201024404A (en) * | 2008-12-17 | 2010-07-01 | Air Prod & Chem | Wet clean compositions for CoWP and porous dielectrics |
Also Published As
Publication number | Publication date |
---|---|
CN103777475A (zh) | 2014-05-07 |
US20140109931A1 (en) | 2014-04-24 |
TW201416436A (zh) | 2014-05-01 |
JP2016040382A (ja) | 2016-03-24 |
MY163132A (en) | 2017-08-15 |
JP2018164091A (ja) | 2018-10-18 |
JP6546080B2 (ja) | 2019-07-17 |
KR20140051796A (ko) | 2014-05-02 |
US9536730B2 (en) | 2017-01-03 |
JP2014084464A (ja) | 2014-05-12 |
CN103777475B (zh) | 2018-09-21 |
SG2013076922A (en) | 2014-05-29 |
KR101557979B1 (ko) | 2015-10-06 |
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