MY158776A - Resist stripping compositions and methods for manufacturing electrical devices - Google Patents

Resist stripping compositions and methods for manufacturing electrical devices

Info

Publication number
MY158776A
MY158776A MYPI2011005271A MYPI2011005271A MY158776A MY 158776 A MY158776 A MY 158776A MY PI2011005271 A MYPI2011005271 A MY PI2011005271A MY PI2011005271 A MYPI2011005271 A MY PI2011005271A MY 158776 A MY158776 A MY 158776A
Authority
MY
Malaysia
Prior art keywords
weight
electrical devices
manufacturing electrical
tone
methods
Prior art date
Application number
MYPI2011005271A
Other languages
English (en)
Inventor
Andreas Klipp
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of MY158776A publication Critical patent/MY158776A/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/20Cleaning during device manufacture
    • H10P70/23Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
  • Paints Or Removers (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
MYPI2011005271A 2009-05-07 2010-04-20 Resist stripping compositions and methods for manufacturing electrical devices MY158776A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17617909P 2009-05-07 2009-05-07

Publications (1)

Publication Number Publication Date
MY158776A true MY158776A (en) 2016-11-15

Family

ID=42271987

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2011005271A MY158776A (en) 2009-05-07 2010-04-20 Resist stripping compositions and methods for manufacturing electrical devices

Country Status (11)

Country Link
US (1) US9146471B2 (enExample)
EP (1) EP2427804B1 (enExample)
JP (1) JP5836932B2 (enExample)
KR (1) KR101799602B1 (enExample)
CN (1) CN102804074B (enExample)
IL (1) IL215954A (enExample)
MY (1) MY158776A (enExample)
RU (1) RU2551841C2 (enExample)
SG (2) SG10201402081TA (enExample)
TW (1) TWI492001B (enExample)
WO (1) WO2010127943A1 (enExample)

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US9472420B2 (en) 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal
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KR20180087624A (ko) 2017-01-25 2018-08-02 동우 화인켐 주식회사 레지스트 박리액 조성물
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KR102735628B1 (ko) 2018-12-19 2024-12-02 삼성전자주식회사 반도체 패키지의 제조방법
JP7273660B2 (ja) * 2019-08-30 2023-05-15 キオクシア株式会社 半導体製造装置、および半導体装置の製造方法
KR102794011B1 (ko) 2020-10-30 2025-04-15 주식회사 이엔에프테크놀로지 포토레지스트 제거용 박리액 조성물
KR102933956B1 (ko) 2021-05-03 2026-03-04 삼성전자주식회사 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법
TWI861658B (zh) * 2022-12-30 2024-11-11 達興材料股份有限公司 清潔組合物、清洗方法和半導體製造方法
KR20240140690A (ko) * 2023-03-17 2024-09-24 삼성전자주식회사 박리액 조성물
CN117031895B (zh) * 2023-08-17 2024-10-15 浙江奥首材料科技有限公司 一种芯片光刻胶剥离液、其制备方法及用途

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Also Published As

Publication number Publication date
CN102804074A (zh) 2012-11-28
IL215954A (en) 2017-01-31
EP2427804B1 (en) 2019-10-02
TW201044124A (en) 2010-12-16
SG175820A1 (en) 2011-12-29
IL215954A0 (en) 2012-01-31
RU2551841C2 (ru) 2015-05-27
JP2012526295A (ja) 2012-10-25
TWI492001B (zh) 2015-07-11
CN102804074B (zh) 2015-03-04
RU2011149552A (ru) 2013-06-20
SG10201402081TA (en) 2014-07-30
JP5836932B2 (ja) 2015-12-24
EP2427804A1 (en) 2012-03-14
WO2010127943A1 (en) 2010-11-11
US9146471B2 (en) 2015-09-29
KR20120024714A (ko) 2012-03-14
US20120058644A1 (en) 2012-03-08
KR101799602B1 (ko) 2017-11-20

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