RU2551841C2 - Композиции для удаления резиста и способы изготовления электрических устройств - Google Patents
Композиции для удаления резиста и способы изготовления электрических устройств Download PDFInfo
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- RU2551841C2 RU2551841C2 RU2011149552/04A RU2011149552A RU2551841C2 RU 2551841 C2 RU2551841 C2 RU 2551841C2 RU 2011149552/04 A RU2011149552/04 A RU 2011149552/04A RU 2011149552 A RU2011149552 A RU 2011149552A RU 2551841 C2 RU2551841 C2 RU 2551841C2
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- removal
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Detergent Compositions (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17617909P | 2009-05-07 | 2009-05-07 | |
| US61/176,179 | 2009-05-07 | ||
| PCT/EP2010/055205 WO2010127943A1 (en) | 2009-05-07 | 2010-04-20 | Resist stripping compositions and methods for manufacturing electrical devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2011149552A RU2011149552A (ru) | 2013-06-20 |
| RU2551841C2 true RU2551841C2 (ru) | 2015-05-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| RU2011149552/04A RU2551841C2 (ru) | 2009-05-07 | 2010-04-20 | Композиции для удаления резиста и способы изготовления электрических устройств |
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| Country | Link |
|---|---|
| US (1) | US9146471B2 (enExample) |
| EP (1) | EP2427804B1 (enExample) |
| JP (1) | JP5836932B2 (enExample) |
| KR (1) | KR101799602B1 (enExample) |
| CN (1) | CN102804074B (enExample) |
| IL (1) | IL215954A (enExample) |
| MY (1) | MY158776A (enExample) |
| RU (1) | RU2551841C2 (enExample) |
| SG (2) | SG175820A1 (enExample) |
| TW (1) | TWI492001B (enExample) |
| WO (1) | WO2010127943A1 (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103430102B (zh) | 2011-03-18 | 2017-02-08 | 巴斯夫欧洲公司 | 制造具有带50nm及更小行间距尺寸的图案化材料层的集成电路装置、光学装置、微型电机和机械精密装置的方法 |
| US9223221B2 (en) | 2012-03-16 | 2015-12-29 | Basf Se | Photoresist stripping and cleaning composition, method of its preparation and its use |
| EP2875406A4 (en) * | 2012-07-16 | 2016-11-09 | Basf Se | COMPOSITION FOR MANUFACTURING INTEGRATED CIRCUIT ARRANGEMENTS, OPTICAL DEVICES, MICROMETERS AND MECHANICAL PRECISION DEVICES |
| CN104769733B (zh) * | 2012-07-24 | 2017-08-08 | 株式会社Lg化学 | 用于改进发光器件的光提取效率的方法以及用于制造发光器件的方法 |
| JP6165665B2 (ja) | 2013-05-30 | 2017-07-19 | 信越化学工業株式会社 | 基板の洗浄方法 |
| US9472420B2 (en) | 2013-12-20 | 2016-10-18 | Air Products And Chemicals, Inc. | Composition for titanium nitride hard mask and etch residue removal |
| CN104774697A (zh) * | 2015-04-28 | 2015-07-15 | 苏州永创达电子有限公司 | 一种液晶清洗剂 |
| US9976111B2 (en) | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
| KR102384908B1 (ko) * | 2015-11-25 | 2022-04-08 | 삼성전자주식회사 | 자성 패턴 세정 조성물, 자성 패턴 형성 방법 및 자기 메모리 장치의 제조 방법 |
| KR20180087624A (ko) | 2017-01-25 | 2018-08-02 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 |
| US11175587B2 (en) * | 2017-09-29 | 2021-11-16 | Versum Materials Us, Llc | Stripper solutions and methods of using stripper solutions |
| US10948826B2 (en) * | 2018-03-07 | 2021-03-16 | Versum Materials Us, Llc | Photoresist stripper |
| KR102735628B1 (ko) | 2018-12-19 | 2024-12-02 | 삼성전자주식회사 | 반도체 패키지의 제조방법 |
| JP7273660B2 (ja) * | 2019-08-30 | 2023-05-15 | キオクシア株式会社 | 半導体製造装置、および半導体装置の製造方法 |
| KR102794011B1 (ko) | 2020-10-30 | 2025-04-15 | 주식회사 이엔에프테크놀로지 | 포토레지스트 제거용 박리액 조성물 |
| KR20220150134A (ko) | 2021-05-03 | 2022-11-10 | 삼성전자주식회사 | 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법 |
| TWI861658B (zh) * | 2022-12-30 | 2024-11-11 | 達興材料股份有限公司 | 清潔組合物、清洗方法和半導體製造方法 |
| CN117031895B (zh) * | 2023-08-17 | 2024-10-15 | 浙江奥首材料科技有限公司 | 一种芯片光刻胶剥离液、其制备方法及用途 |
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-
2010
- 2010-04-20 EP EP10715225.8A patent/EP2427804B1/en active Active
- 2010-04-20 WO PCT/EP2010/055205 patent/WO2010127943A1/en not_active Ceased
- 2010-04-20 SG SG2011079381A patent/SG175820A1/en unknown
- 2010-04-20 RU RU2011149552/04A patent/RU2551841C2/ru not_active IP Right Cessation
- 2010-04-20 KR KR1020117029143A patent/KR101799602B1/ko active Active
- 2010-04-20 SG SG10201402081TA patent/SG10201402081TA/en unknown
- 2010-04-20 US US13/319,187 patent/US9146471B2/en active Active
- 2010-04-20 MY MYPI2011005271A patent/MY158776A/en unknown
- 2010-04-20 JP JP2012508978A patent/JP5836932B2/ja not_active Expired - Fee Related
- 2010-04-20 CN CN201080030190.1A patent/CN102804074B/zh active Active
- 2010-05-06 TW TW099114548A patent/TWI492001B/zh active
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2011
- 2011-10-26 IL IL215954A patent/IL215954A/en active IP Right Grant
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| SU1834588A1 (ru) * | 1989-12-07 | 1996-07-10 | Научно-исследовательский институт точного машиностроения | Способ формирования рельефа интегральных микросхем |
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Also Published As
| Publication number | Publication date |
|---|---|
| EP2427804A1 (en) | 2012-03-14 |
| JP2012526295A (ja) | 2012-10-25 |
| TW201044124A (en) | 2010-12-16 |
| CN102804074B (zh) | 2015-03-04 |
| SG175820A1 (en) | 2011-12-29 |
| CN102804074A (zh) | 2012-11-28 |
| MY158776A (en) | 2016-11-15 |
| SG10201402081TA (en) | 2014-07-30 |
| IL215954A (en) | 2017-01-31 |
| WO2010127943A1 (en) | 2010-11-11 |
| EP2427804B1 (en) | 2019-10-02 |
| RU2011149552A (ru) | 2013-06-20 |
| KR101799602B1 (ko) | 2017-11-20 |
| US20120058644A1 (en) | 2012-03-08 |
| JP5836932B2 (ja) | 2015-12-24 |
| IL215954A0 (en) | 2012-01-31 |
| TWI492001B (zh) | 2015-07-11 |
| US9146471B2 (en) | 2015-09-29 |
| KR20120024714A (ko) | 2012-03-14 |
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| MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20190421 |