KR101799602B1 - 레지스트 스트리핑 조성물 및 전기 소자의 제조 방법 - Google Patents

레지스트 스트리핑 조성물 및 전기 소자의 제조 방법 Download PDF

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Publication number
KR101799602B1
KR101799602B1 KR1020117029143A KR20117029143A KR101799602B1 KR 101799602 B1 KR101799602 B1 KR 101799602B1 KR 1020117029143 A KR1020117029143 A KR 1020117029143A KR 20117029143 A KR20117029143 A KR 20117029143A KR 101799602 B1 KR101799602 B1 KR 101799602B1
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KR20120024714A (ko
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안드레아스 클립
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바스프 에스이
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
  • Paints Or Removers (AREA)
KR1020117029143A 2009-05-07 2010-04-20 레지스트 스트리핑 조성물 및 전기 소자의 제조 방법 Active KR101799602B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17617909P 2009-05-07 2009-05-07
US61/176,179 2009-05-07
PCT/EP2010/055205 WO2010127943A1 (en) 2009-05-07 2010-04-20 Resist stripping compositions and methods for manufacturing electrical devices

Publications (2)

Publication Number Publication Date
KR20120024714A KR20120024714A (ko) 2012-03-14
KR101799602B1 true KR101799602B1 (ko) 2017-11-20

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KR1020117029143A Active KR101799602B1 (ko) 2009-05-07 2010-04-20 레지스트 스트리핑 조성물 및 전기 소자의 제조 방법

Country Status (11)

Country Link
US (1) US9146471B2 (enExample)
EP (1) EP2427804B1 (enExample)
JP (1) JP5836932B2 (enExample)
KR (1) KR101799602B1 (enExample)
CN (1) CN102804074B (enExample)
IL (1) IL215954A (enExample)
MY (1) MY158776A (enExample)
RU (1) RU2551841C2 (enExample)
SG (2) SG175820A1 (enExample)
TW (1) TWI492001B (enExample)
WO (1) WO2010127943A1 (enExample)

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CN103430102B (zh) 2011-03-18 2017-02-08 巴斯夫欧洲公司 制造具有带50nm及更小行间距尺寸的图案化材料层的集成电路装置、光学装置、微型电机和机械精密装置的方法
US9223221B2 (en) 2012-03-16 2015-12-29 Basf Se Photoresist stripping and cleaning composition, method of its preparation and its use
EP2875406A4 (en) * 2012-07-16 2016-11-09 Basf Se COMPOSITION FOR MANUFACTURING INTEGRATED CIRCUIT ARRANGEMENTS, OPTICAL DEVICES, MICROMETERS AND MECHANICAL PRECISION DEVICES
CN104769733B (zh) * 2012-07-24 2017-08-08 株式会社Lg化学 用于改进发光器件的光提取效率的方法以及用于制造发光器件的方法
JP6165665B2 (ja) 2013-05-30 2017-07-19 信越化学工業株式会社 基板の洗浄方法
US9472420B2 (en) 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal
CN104774697A (zh) * 2015-04-28 2015-07-15 苏州永创达电子有限公司 一种液晶清洗剂
US9976111B2 (en) 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
KR102384908B1 (ko) * 2015-11-25 2022-04-08 삼성전자주식회사 자성 패턴 세정 조성물, 자성 패턴 형성 방법 및 자기 메모리 장치의 제조 방법
KR20180087624A (ko) 2017-01-25 2018-08-02 동우 화인켐 주식회사 레지스트 박리액 조성물
US11175587B2 (en) * 2017-09-29 2021-11-16 Versum Materials Us, Llc Stripper solutions and methods of using stripper solutions
US10948826B2 (en) * 2018-03-07 2021-03-16 Versum Materials Us, Llc Photoresist stripper
KR102735628B1 (ko) 2018-12-19 2024-12-02 삼성전자주식회사 반도체 패키지의 제조방법
JP7273660B2 (ja) * 2019-08-30 2023-05-15 キオクシア株式会社 半導体製造装置、および半導体装置の製造方法
KR102794011B1 (ko) 2020-10-30 2025-04-15 주식회사 이엔에프테크놀로지 포토레지스트 제거용 박리액 조성물
KR20220150134A (ko) 2021-05-03 2022-11-10 삼성전자주식회사 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법
TWI861658B (zh) * 2022-12-30 2024-11-11 達興材料股份有限公司 清潔組合物、清洗方法和半導體製造方法
CN117031895B (zh) * 2023-08-17 2024-10-15 浙江奥首材料科技有限公司 一种芯片光刻胶剥离液、其制备方法及用途

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Also Published As

Publication number Publication date
EP2427804A1 (en) 2012-03-14
JP2012526295A (ja) 2012-10-25
TW201044124A (en) 2010-12-16
CN102804074B (zh) 2015-03-04
SG175820A1 (en) 2011-12-29
CN102804074A (zh) 2012-11-28
MY158776A (en) 2016-11-15
RU2551841C2 (ru) 2015-05-27
SG10201402081TA (en) 2014-07-30
IL215954A (en) 2017-01-31
WO2010127943A1 (en) 2010-11-11
EP2427804B1 (en) 2019-10-02
RU2011149552A (ru) 2013-06-20
US20120058644A1 (en) 2012-03-08
JP5836932B2 (ja) 2015-12-24
IL215954A0 (en) 2012-01-31
TWI492001B (zh) 2015-07-11
US9146471B2 (en) 2015-09-29
KR20120024714A (ko) 2012-03-14

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