JP5836932B2 - レジストストリッピング組成物及び電気装置を製造するための方法 - Google Patents

レジストストリッピング組成物及び電気装置を製造するための方法 Download PDF

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Publication number
JP5836932B2
JP5836932B2 JP2012508978A JP2012508978A JP5836932B2 JP 5836932 B2 JP5836932 B2 JP 5836932B2 JP 2012508978 A JP2012508978 A JP 2012508978A JP 2012508978 A JP2012508978 A JP 2012508978A JP 5836932 B2 JP5836932 B2 JP 5836932B2
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Japan
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composition
layer
resist
weight
hydroxylamine
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Expired - Fee Related
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JP2012508978A
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Japanese (ja)
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JP2012526295A5 (enExample
JP2012526295A (ja
Inventor
クリップ，アンドレアス
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BASF SE
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BASF SE
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Paints Or Removers (AREA)
JP2012508978A 2009-05-07 2010-04-20 レジストストリッピング組成物及び電気装置を製造するための方法 Expired - Fee Related JP5836932B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17617909P 2009-05-07 2009-05-07
US61/176,179 2009-05-07
PCT/EP2010/055205 WO2010127943A1 (en) 2009-05-07 2010-04-20 Resist stripping compositions and methods for manufacturing electrical devices

Publications (3)

Publication Number Publication Date
JP2012526295A JP2012526295A (ja) 2012-10-25
JP2012526295A5 JP2012526295A5 (enExample) 2013-06-06
JP5836932B2 true JP5836932B2 (ja) 2015-12-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012508978A Expired - Fee Related JP5836932B2 (ja) 2009-05-07 2010-04-20 レジストストリッピング組成物及び電気装置を製造するための方法

Country Status (11)

Country Link
US (1) US9146471B2 (enExample)
EP (1) EP2427804B1 (enExample)
JP (1) JP5836932B2 (enExample)
KR (1) KR101799602B1 (enExample)
CN (1) CN102804074B (enExample)
IL (1) IL215954A (enExample)
MY (1) MY158776A (enExample)
RU (1) RU2551841C2 (enExample)
SG (2) SG10201402081TA (enExample)
TW (1) TWI492001B (enExample)
WO (1) WO2010127943A1 (enExample)

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KR102933956B1 (ko) 2021-05-03 2026-03-04 삼성전자주식회사 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법
TWI861658B (zh) * 2022-12-30 2024-11-11 達興材料股份有限公司 清潔組合物、清洗方法和半導體製造方法
KR20240140690A (ko) * 2023-03-17 2024-09-24 삼성전자주식회사 박리액 조성물
CN117031895B (zh) * 2023-08-17 2024-10-15 浙江奥首材料科技有限公司 一种芯片光刻胶剥离液、其制备方法及用途

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Also Published As

Publication number Publication date
TW201044124A (en) 2010-12-16
WO2010127943A1 (en) 2010-11-11
US9146471B2 (en) 2015-09-29
CN102804074B (zh) 2015-03-04
KR101799602B1 (ko) 2017-11-20
RU2011149552A (ru) 2013-06-20
SG10201402081TA (en) 2014-07-30
EP2427804A1 (en) 2012-03-14
US20120058644A1 (en) 2012-03-08
KR20120024714A (ko) 2012-03-14
EP2427804B1 (en) 2019-10-02
IL215954A0 (en) 2012-01-31
TWI492001B (zh) 2015-07-11
RU2551841C2 (ru) 2015-05-27
MY158776A (en) 2016-11-15
CN102804074A (zh) 2012-11-28
IL215954A (en) 2017-01-31
JP2012526295A (ja) 2012-10-25
SG175820A1 (en) 2011-12-29

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