MXPA02002649A - Metodo para construir una estructura electronica que tiene un termopar de indio y una estructura electronica que tiene un termopar de indio. - Google Patents
Metodo para construir una estructura electronica que tiene un termopar de indio y una estructura electronica que tiene un termopar de indio.Info
- Publication number
- MXPA02002649A MXPA02002649A MXPA02002649A MXPA02002649A MXPA02002649A MX PA02002649 A MXPA02002649 A MX PA02002649A MX PA02002649 A MXPA02002649 A MX PA02002649A MX PA02002649 A MXPA02002649 A MX PA02002649A MX PA02002649 A MXPA02002649 A MX PA02002649A
- Authority
- MX
- Mexico
- Prior art keywords
- substance
- alloy
- sheet
- flake
- lid
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000000126 substance Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000956 alloy Substances 0.000 claims description 79
- 229910045601 alloy Inorganic materials 0.000 claims description 79
- 238000002844 melting Methods 0.000 claims description 22
- 230000008018 melting Effects 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 4
- 230000006378 damage Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims description 2
- 238000009736 wetting Methods 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims 6
- 238000010992 reflux Methods 0.000 claims 2
- 239000011159 matrix material Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 15
- 239000004519 grease Substances 0.000 description 7
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 239000011324 bead Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000002560 therapeutic procedure Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/394,860 US6461891B1 (en) | 1999-09-13 | 1999-09-13 | Method of constructing an electronic assembly having an indium thermal couple and an electronic assembly having an indium thermal couple |
| PCT/US2000/023778 WO2001020673A1 (en) | 1999-09-13 | 2000-08-29 | A method of constructing an electronic assembly having an indium thermal couple and an electronic assembly having an indium thermal couple |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MXPA02002649A true MXPA02002649A (es) | 2003-01-28 |
Family
ID=23560692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MXPA02002649A MXPA02002649A (es) | 1999-09-13 | 2000-08-29 | Metodo para construir una estructura electronica que tiene un termopar de indio y una estructura electronica que tiene un termopar de indio. |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6461891B1 (enExample) |
| JP (1) | JP5030352B2 (enExample) |
| KR (1) | KR20020035870A (enExample) |
| CN (1) | CN1319158C (enExample) |
| AU (1) | AU7088900A (enExample) |
| MX (1) | MXPA02002649A (enExample) |
| MY (1) | MY122678A (enExample) |
| WO (1) | WO2001020673A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6461891B1 (en) | 1999-09-13 | 2002-10-08 | Intel Corporation | Method of constructing an electronic assembly having an indium thermal couple and an electronic assembly having an indium thermal couple |
| US6709898B1 (en) * | 2000-10-04 | 2004-03-23 | Intel Corporation | Die-in-heat spreader microelectronic package |
| CN100362655C (zh) * | 2002-01-30 | 2008-01-16 | 霍尼韦尔国际公司 | 热界面材料以及包括铟和锌的组合物 |
| US6882041B1 (en) * | 2002-02-05 | 2005-04-19 | Altera Corporation | Thermally enhanced metal capped BGA package |
| US7436058B2 (en) * | 2002-05-09 | 2008-10-14 | Intel Corporation | Reactive solder material |
| US20070164424A1 (en) * | 2003-04-02 | 2007-07-19 | Nancy Dean | Thermal interconnect and interface systems, methods of production and uses thereof |
| DE10335111B4 (de) * | 2003-07-31 | 2006-12-28 | Infineon Technologies Ag | Montageverfahren für ein Halbleiterbauteil |
| US7132746B2 (en) * | 2003-08-18 | 2006-11-07 | Delphi Technologies, Inc. | Electronic assembly with solder-bonded heat sink |
| JP4411123B2 (ja) * | 2004-03-31 | 2010-02-10 | 新光電気工業株式会社 | 放熱板の製造方法 |
| JP2007266150A (ja) * | 2006-03-28 | 2007-10-11 | Fujitsu Ltd | 熱伝導性接合材、半導体パッケージ、ヒートスプレッダ、半導体チップ、及び半導体チップとヒートスプレッダとを接合する接合方法 |
| JP5211457B2 (ja) * | 2006-09-19 | 2013-06-12 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| US7633151B2 (en) * | 2007-03-16 | 2009-12-15 | Advanced Micro Devices, Inc. | Integrated circuit package lid with a wetting film |
| US7834442B2 (en) * | 2007-12-12 | 2010-11-16 | International Business Machines Corporation | Electronic package method and structure with cure-melt hierarchy |
| JP5153316B2 (ja) * | 2007-12-21 | 2013-02-27 | 新光電気工業株式会社 | 半導体パッケージ用放熱板およびそのめっき方法 |
| US8378480B2 (en) * | 2010-03-04 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy wafers in 3DIC package assemblies |
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| US4034469A (en) * | 1976-09-03 | 1977-07-12 | Ibm Corporation | Method of making conduction-cooled circuit package |
| US4034468A (en) * | 1976-09-03 | 1977-07-12 | Ibm Corporation | Method for making conduction-cooled circuit package |
| US4069498A (en) | 1976-11-03 | 1978-01-17 | International Business Machines Corporation | Studded heat exchanger for integrated circuit package |
| US4092697A (en) | 1976-12-06 | 1978-05-30 | International Business Machines Corporation | Heat transfer mechanism for integrated circuit package |
| US4323914A (en) | 1979-02-01 | 1982-04-06 | International Business Machines Corporation | Heat transfer structure for integrated circuit package |
| US4607277A (en) | 1982-03-16 | 1986-08-19 | International Business Machines Corporation | Semiconductor assembly employing noneutectic alloy for heat dissipation |
| US4620215A (en) | 1982-04-16 | 1986-10-28 | Amdahl Corporation | Integrated circuit packaging systems with double surface heat dissipation |
| US4545840A (en) * | 1983-03-08 | 1985-10-08 | Monolithic Memories, Inc. | Process for controlling thickness of die attach adhesive |
| CA2002213C (en) | 1988-11-10 | 1999-03-30 | Iwona Turlik | High performance integrated circuit chip package and method of making same |
| DE4027169C2 (de) * | 1989-08-31 | 1994-05-05 | Aisin Seiki | Außen-Rückspiegel für ein Kraftfahrzeug |
| JPH04192552A (ja) | 1990-11-27 | 1992-07-10 | Nec Corp | 半導体素子用パッケージ |
| JP3039584B2 (ja) * | 1992-07-03 | 2000-05-08 | 株式会社日立製作所 | 半導体集積回路モジュールの組立方法 |
| JP3258764B2 (ja) * | 1993-06-01 | 2002-02-18 | 三菱電機株式会社 | 樹脂封止型半導体装置の製造方法ならびに外部引出用電極およびその製造方法 |
| US5396403A (en) * | 1993-07-06 | 1995-03-07 | Hewlett-Packard Company | Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate |
| US5747874A (en) * | 1994-09-20 | 1998-05-05 | Fujitsu Limited | Semiconductor device, base member for semiconductor device and semiconductor device unit |
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| JP3318811B2 (ja) * | 1994-12-29 | 2002-08-26 | ソニー株式会社 | 半導体発光素子のパッケージ及びその製造方法 |
| US5616958A (en) * | 1995-01-25 | 1997-04-01 | International Business Machines Corporation | Electronic package |
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| US6404048B2 (en) * | 1998-09-03 | 2002-06-11 | Micron Technology, Inc. | Heat dissipating microelectronic package |
| US6275381B1 (en) | 1998-12-10 | 2001-08-14 | International Business Machines Corporation | Thermal paste preforms as a heat transfer media between a chip and a heat sink and method thereof |
| JP4275806B2 (ja) * | 1999-06-01 | 2009-06-10 | 株式会社ルネサステクノロジ | 半導体素子の実装方法 |
| SG87046A1 (en) * | 1999-08-17 | 2002-03-19 | Micron Technology Inc | Multi-chip module with stacked dice |
| US6461891B1 (en) | 1999-09-13 | 2002-10-08 | Intel Corporation | Method of constructing an electronic assembly having an indium thermal couple and an electronic assembly having an indium thermal couple |
| US6258626B1 (en) * | 2000-07-06 | 2001-07-10 | Advanced Semiconductor Engineering, Inc. | Method of making stacked chip package |
-
1999
- 1999-09-13 US US09/394,860 patent/US6461891B1/en not_active Expired - Lifetime
-
2000
- 2000-08-29 CN CNB008126321A patent/CN1319158C/zh not_active Expired - Fee Related
- 2000-08-29 AU AU70889/00A patent/AU7088900A/en not_active Abandoned
- 2000-08-29 WO PCT/US2000/023778 patent/WO2001020673A1/en not_active Ceased
- 2000-08-29 KR KR1020027003268A patent/KR20020035870A/ko not_active Ceased
- 2000-08-29 MX MXPA02002649A patent/MXPA02002649A/es active IP Right Grant
- 2000-08-29 JP JP2001524152A patent/JP5030352B2/ja not_active Expired - Fee Related
- 2000-09-06 MY MYPI20004104A patent/MY122678A/en unknown
-
2002
- 2002-06-04 US US10/163,823 patent/US6882043B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20020151110A1 (en) | 2002-10-17 |
| AU7088900A (en) | 2001-04-17 |
| KR20020035870A (ko) | 2002-05-15 |
| US20020020912A1 (en) | 2002-02-21 |
| JP2003509865A (ja) | 2003-03-11 |
| MY122678A (en) | 2006-04-29 |
| US6461891B1 (en) | 2002-10-08 |
| CN1319158C (zh) | 2007-05-30 |
| CN1373903A (zh) | 2002-10-09 |
| JP5030352B2 (ja) | 2012-09-19 |
| US6882043B2 (en) | 2005-04-19 |
| WO2001020673A1 (en) | 2001-03-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG | Grant or registration |