JP5211457B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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Description
先ず、本発明の第1の実施形態について説明する。図1A乃至図1Iは、本発明の第1の実施形態に係る半導体装置の製造方法を工程順に示す断面図である。
次に、本発明の第2の実施形態について説明する。図5A乃至図5Dは、本発明の第2の実施形態に係る半導体装置の製造方法を工程順に示す断面図である。
半導体チップと、
前記半導体チップを搭載する基板と、
前記半導体チップ及び前記基板上に配設された熱拡散部材と、
を有する半導体装置において、
前記半導体チップと前記熱拡散部材とはIn合金膜で接合されていることを特徴とする半導体装置。
前記In合金膜の厚さは、0.1mm乃至0.8mmであることを特徴とする付記1に記載の半導体装置。
前記In合金膜は、Sn、Pb、Ag及びBiからなる群から選択された少なくとも1種の元素を含有することを特徴とする付記1又は2に記載の半導体装置。
前記In合金膜中のIn以外の元素の割合は、0.1原子%乃至20原子%であることを特徴とする付記1乃至3のいずれか1項に記載の半導体装置。
前記In合金膜は、5原子%乃至20原子%のAgを含有することを特徴とする付記1又は2に記載の半導体装置。
前記In合金膜と前記半導体チップとの間に位置する金属膜を有することを特徴とする付記1乃至5のいずれか1項に記載の半導体装置。
前記金属膜は、Ti、Cu、Ni及びAgからなる群から選択された少なくとも1種の元素からなる1又は2以上の膜を有することを特徴とする付記6に記載の半導体装置。
前記金属膜は、Ti、Ni、Pd、V及びAgからなる群から選択された2以上の元素からなる1又は2以上の膜を有することを特徴とする付記6に記載の半導体装置。
前記熱拡散部材の熱伝導率は、2(W・cm-1・k-1)以上であることを特徴とする付記1乃至8のいずれか1項に記載の半導体装置。
前記熱拡散部材は樹脂を介して前記基板に接合されていることを特徴とする付記1乃至9のいずれか1項に記載の半導体装置。
半導体チップを基板に搭載する工程と、
前記半導体チップ上にIn合金膜を介して前記半導体チップ及び前記基板上に熱拡散部材を接合する工程と、
を有することを特徴とする半導体装置の製造方法。
前記In合金膜の厚さを、0.1mm乃至0.8mmとすることを特徴とする付記11に記載の半導体装置の製造方法。
前記In合金膜として、Sn、Pb、Ag及びBiからなる群から選択された少なくとも1種の元素を含有する膜を用いることを特徴とする付記11又は12に記載の半導体装置の製造方法。
前記In合金膜として、当該膜中のIn以外の元素の割合が0.1原子%乃至20原子%である膜を用いることを特徴とする付記11乃至13のいずれか1項に記載の半導体装置の製造方法。
前記In合金膜として、5原子%乃至20原子%のAgを含有する膜を用いることを特徴とする付記11乃至14のいずれか1項に記載の半導体装置の製造方法。
前記熱拡散部材を前記半導体チップに接合する工程は、
前記半導体チップの上方にIn合金ペレットを載置する工程と、
前記In合金ペレット上に前記熱拡散部材を載置する工程と、
前記In合金ペレットを溶融させる工程と、
前記溶融したIn合金を凝固させて前記In合金膜を形成する工程と、
を有することを特徴とする付記11乃至15のいずれか1項に記載の半導体装置の製造方法。
前記半導体チップを形成する工程は、
半導体基板の一方の面に半導体素子を形成する工程と、
前記半導体基板の他方の面にIn合金シートを密着させる工程と、
前記半導体基板及び前記In合金シートをダイシングする工程と、
を有し、
前記熱拡散部材を前記半導体チップに接合する工程は、
前記In合金シート上に前記熱拡散部材を載置する工程と、
前記In合金シートを溶融させる工程と、
前記溶融したIn合金を凝固させて前記In合金膜を形成する工程と、
を有することを特徴とする付記11乃至16のいずれか1項に記載の半導体装置の製造方法。
前記熱拡散部材を前記半導体チップに接合する際に、前記In合金膜と前記半導体チップとの間に金属膜を介在させることを特徴とする付記11乃至17のいずれか1項に記載の半導体装置の製造方法。
前記熱拡散部材を前記基板及び前記半導体チップに接合する際に、樹脂を介して前記基板に接合することを特徴とする付記11乃至18のいずれか1項に記載の半導体装置の製造方法。
2:バンプ
3:金属膜
4:セラミック基板
5:In合金ペレット
11:ヒートスプレッダ
11a:中央凸部
11b:周辺凸部
12:スティフナ
13:エポキシシート
14:はんだボール
15:In合金シート
16:クリップ
17:In合金膜
18:半導体チップ
Claims (8)
- 半導体チップと、
前記半導体チップを搭載する基板と、
前記半導体チップ及び前記基板上に配設された熱拡散部材と、
を有する半導体装置において、
前記半導体チップと前記熱拡散部材とはInAg合金膜で接合されており、
更に、前記InAg合金膜と前記半導体チップとの間に位置し、Agを含有する金属膜を有することを特徴とする半導体装置。 - 前記InAg合金膜の厚さは、0.1mm乃至0.8mmであることを特徴とする請求項1に記載の半導体装置。
- 前記熱拡散部材は樹脂を介して前記基板に接合されていることを特徴とする請求項1又は2に記載の半導体装置。
- 半導体チップを基板に搭載する工程と、
前記半導体チップ上にInAg合金膜を介して前記半導体チップ及び前記基板上に熱拡散部材を接合する工程と、
を有し、
前記熱拡散部材を前記半導体チップに接合する際に、前記InAg合金膜と前記半導体チップとの間に、Agを含有する金属膜を介在させることを特徴とする半導体装置の製造方法。 - 前記InAg合金膜の厚さを、0.1mm乃至0.8mmとすることを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記InAg合金膜として、5原子%乃至20原子%のAgを含有する膜を用いることを特徴とする請求項4又は5に記載の半導体装置の製造方法。
- 前記熱拡散部材を前記半導体チップに接合する工程は、
前記半導体チップの上方にInAg合金ペレットを載置する工程と、
前記InAg合金ペレット上に前記熱拡散部材を載置する工程と、
前記InAg合金ペレットを溶融させる工程と、
前記溶融したInAg合金を凝固させて前記InAg合金膜を形成する工程と、
を有することを特徴とする請求項4乃至6のいずれか1項に記載の半導体装置の製造方法。 - 前記半導体チップを形成する工程は、
半導体基板の一方の面に半導体素子を形成する工程と、
前記半導体基板の他方の面にInAg合金シートを密着させる工程と、
前記半導体基板及び前記InAg合金シートをダイシングする工程と、
を有し、
前記熱拡散部材を前記半導体チップに接合する工程は、
前記InAg合金シート上に前記熱拡散部材を載置する工程と、
前記InAg合金シートを溶融させる工程と、
前記溶融したInAg合金を凝固させて前記InAg合金膜を形成する工程と、
を有することを特徴とする請求項4乃至6のいずれか1項に記載の半導体装置の製造方法。
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JP2006252899A JP5211457B2 (ja) | 2006-09-19 | 2006-09-19 | 半導体装置及びその製造方法 |
KR1020070004280A KR100820665B1 (ko) | 2006-09-19 | 2007-01-15 | 반도체 장치 및 그 제조 방법 |
TW096127791A TWI433280B (zh) | 2006-09-19 | 2007-07-30 | 半導體裝置及其製造方法 |
US11/882,266 US8513800B2 (en) | 2006-09-19 | 2007-07-31 | Semiconductor device and method for manufacturing the same |
CN2007101468678A CN101150102B (zh) | 2006-09-19 | 2007-08-24 | 半导体器件及其制造方法 |
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US20090166852A1 (en) * | 2007-12-31 | 2009-07-02 | Chuan Hu | Semiconductor packages with thermal interface materials |
US20120068345A1 (en) * | 2010-09-16 | 2012-03-22 | Infineon Technologies Ag | Layer stacks and integrated circuit arrangements |
US10062634B2 (en) * | 2016-12-21 | 2018-08-28 | Micron Technology, Inc. | Semiconductor die assembly having heat spreader that extends through underlying interposer and related technology |
US11791237B2 (en) | 2018-06-27 | 2023-10-17 | Intel Corporation | Microelectronic assemblies including a thermal interface material |
US20200357764A1 (en) * | 2019-05-08 | 2020-11-12 | Intel Corporation | Solder thermal interface material (stim) with dopant |
US11682605B2 (en) | 2019-05-28 | 2023-06-20 | Intel Corporation | Integrated circuit packages with asymmetric adhesion material regions |
US11670569B2 (en) | 2019-06-11 | 2023-06-06 | Intel Corporation | Channeled lids for integrated circuit packages |
CN110648987B (zh) * | 2019-10-11 | 2022-09-06 | 宁波施捷电子有限公司 | 一种界面导热材料层及其用途 |
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JPS5261152A (en) | 1975-11-14 | 1977-05-20 | Tokyo Shibaura Electric Co | Brazing method |
JPS54132774A (en) | 1978-04-05 | 1979-10-16 | Fujitsu Ltd | Method of joining radiation plate |
JPS63192250A (ja) * | 1987-02-04 | 1988-08-09 | Hitachi Ltd | 熱伝導冷却モジユ−ル装置 |
JPS63228650A (ja) | 1987-03-18 | 1988-09-22 | Toshiba Corp | 発熱素子用冷却装置 |
JP2801449B2 (ja) | 1991-11-21 | 1998-09-21 | 京セラ株式会社 | 半導体素子収納用パッケージ |
JPH05275580A (ja) * | 1992-03-25 | 1993-10-22 | Nec Corp | 半導体装置 |
JP3039584B2 (ja) * | 1992-07-03 | 2000-05-08 | 株式会社日立製作所 | 半導体集積回路モジュールの組立方法 |
US5396403A (en) * | 1993-07-06 | 1995-03-07 | Hewlett-Packard Company | Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate |
JP2001044310A (ja) * | 1999-07-28 | 2001-02-16 | Mitsubishi Electric Corp | 半導体装置およびその搭載方法 |
US6461891B1 (en) | 1999-09-13 | 2002-10-08 | Intel Corporation | Method of constructing an electronic assembly having an indium thermal couple and an electronic assembly having an indium thermal couple |
JP2002232022A (ja) | 2001-01-31 | 2002-08-16 | Aisin Seiki Co Ltd | 熱電モジュール及びその製造方法 |
JP2004265972A (ja) * | 2003-02-28 | 2004-09-24 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
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JP2006108296A (ja) | 2004-10-04 | 2006-04-20 | Fujitsu Ltd | 半導体装置 |
US7239517B2 (en) * | 2005-04-11 | 2007-07-03 | Intel Corporation | Integrated heat spreader and method for using |
JP2007005670A (ja) * | 2005-06-27 | 2007-01-11 | Fujitsu Ltd | 電子部品パッケージおよび接合組立体 |
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CN101150102B (zh) | 2011-12-07 |
KR100820665B1 (ko) | 2008-04-11 |
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