CN101150102A - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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CN101150102A
CN101150102A CNA2007101468678A CN200710146867A CN101150102A CN 101150102 A CN101150102 A CN 101150102A CN A2007101468678 A CNA2007101468678 A CN A2007101468678A CN 200710146867 A CN200710146867 A CN 200710146867A CN 101150102 A CN101150102 A CN 101150102A
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film
semiconductor chip
semiconductor
alloy
thermal component
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栗田行树
井川治
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Socionext Inc
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Abstract

一种半导体器件及其制造方法，其中在切割出半导体芯片之后，将In－10原子％Ag球置于金属膜上。接下来，将加强件上的环氧板粘贴到陶瓷衬底上。此时，In合金球夹在中央突出部分与金属膜之间。随后，通过加热、熔化、并随后冷却In合金球，In合金球由此形成In合金膜。结果，经由上述金属膜和In合金膜将半导体芯片与散热器相接合。

Description

半导体器件及其制造方法
相关申请的交叉引用
本申请基于2006年9月19日提出的在先日本专利申请No.2006-252899并要求享有其优先权，在此通过引用并入该在先日本专利申请的全部内容。
技术领域
本发明涉及一种旨在提高散热效率的半导体器件及用于制造该半导体器件的方法。
背景技术
在将半导体芯片装入封装件的IC封装中，存在设置散热器以有效地将热量从半导体芯片消散到外部的情况(例如参阅专利文献1)。散热器有时称为热沉。另外，散热器有时用在将多个半导体芯片和外围电路部件装入封装件中的系统级封装(system-in-package，SIP)中。
一般来说，散热器接合到半导体芯片的背面。对于所述接合，可使用焊料(PbSn)。于是，由半导体芯片产生的热量即被传导到散热器，并且此热量通过自然冷却或强制冷却而消散到外部。
因此，就要求从半导体芯片到散热器的导热率高，这是因为来自半导体芯片的热量是以高效率消散的。另一方面，伴随着近来半导体芯片功能的进步，所产生的热量也在增加。由于这一原因，需要能实现更高导热率的结构。
相关技术公开于专利文献1(日本专利申请公开No.2006-108296)、专利文献2(日本专利申请公开No.Sho 52-61152)、专利文献3(日本专利申请公开No.Sho 63-228650)、及专利文献4(日本专利申请公开No.Sho54-132774)中。
发明内容
本发明的目的在于提供一种能够提高散热效率的半导体器件及用于制造该半导体器件的方法。
本发明的发明人为解决上述问题，在仔细检验之后发现了下述的本发明的各个方案。
根据本发明的半导体器件设置有半导体芯片、安装该半导体芯片的衬底、及设置在半导体芯片和衬底上的散热部件。随后，以In合金膜将半导体芯片与散热部件相接合。
在用于制造根据本发明的半导体器件的方法中，将半导体芯片安装在衬底上，随后以半导体芯片上的In合金膜将散热部件接合到半导体芯片和衬底上。
附图说明
图1A至图1I是示意图，按步骤顺序示出根据本发明第一实施例的用于制造半导体器件的方法。
图2是示意图，示出散热器。
图3是示意图，示出加强件。
图4是立体图，示出根据第一实施例的半导体器件。
图5A至图5D是示意图，按步骤顺序示出根据本发明第二实施例的用于制造半导体器件的方法。
图6是根据第二实施例的半导体器件的立体图。
具体实施方式
以下将参考附图具体描述本发明的实施例。附带说明，为方便起见，以下将同时描述半导体器件的结构及其制造方法。
(第一实施例)
首先描述本发明的第一实施例。图1A至图1I是剖视图，按步骤顺序示出根据本发明第一实施例的用于制造半导体器件的方法。
在第一实施例中，首先将绝缘膜、半导体膜、导电膜等等形成于圆盘状半导体衬底1的表面上并执行热处理等工艺。在图1A至图1I和以下描述中，为方便起见假定绝缘膜、半导体膜、导电膜等等包含在半导体衬底1中。接下来，如图1A所示，在半导体衬底1的表面上形成导电凸点2。
接下来，如图1B所示，将半导体衬底1的背面抛光。半导体衬底1在抛光之后的厚度被调整到例如约100μm至600μm。背面在抛光之后的平均粗糙度Ra被调整到例如约25nm。
随后，如图1C所示，在半导体衬底1的背面上形成金属膜3。例如将形成为单层的Ti膜、Cu膜、Ni膜、或Ag膜作为金属膜3，或将这些膜的叠层作为金属膜3。此外，也能利用由Ti、Ni、Pd、V、及Ag中的两种或更多种金属构成的合金膜作为金属膜3的全部或一部分。另外，还能利用WTi膜、NiCr膜、CrTi膜或类似的膜作为金属膜3的全部或一部分。金属膜3的厚度被调整到例如约50nm至500nm。
之后，如图1D所示，通过切割圆盘状半导体衬底1，切割出多个半导体芯片18。半导体芯片18的平面形状为矩形，具有例如约15mm至20mm的边长。在图1D至图1I中，半导体衬底1的表面图示成面向下的，而背面是面向上的。
接下来，如图1E所示，将半导体芯片18置于陶瓷衬底4上且凸点2面向下，在陶瓷衬底4内形成有布线。
之后，如图1F所示，将In合金球5置于金属膜3上。In合金球5例如由InSn、InPb、InBi、或InAg组成。可将多个In合金球5分散置于金属膜3上，如图1F所示，或将一个合金球5均衡而不分散地置于金属膜3上。
此外，如图2所示，进行接合散热器11的准备。散热器11的平面形状例如为矩形，略小于陶瓷衬底4的平面形状(例如为矩形)。在散热器11中，如图2所示，形成要接合到半导体芯片18的中央突出部分11a，以及沿着外部周边部分的外围突出部分11b。随后，在接合的准备中，利用在其两面均具粘附特性的环氧板13，将加强件12固定到外围突出部分11b上，且环氧板13还粘贴在加强件12的另一表面上。加强件12的平面形状实质上与外围突出部分11b的平面形状相同，如图3所示。加强件12例如是用固体树脂制成的。
随后，如图1G所示，将加强件12上的环氧板13粘贴到陶瓷衬底4上。此时，In合金球5夹在中央突出部分11a与金属膜3之间。随后，通过将环氧板13加热到约70℃，暂时固定(暂时固化)散热器11、加强件12、及陶瓷衬底4。
接下来，如图1H所示，通过夹具16来夹持散热器11和陶瓷衬底4。随后，通过将In合金球5加热而令其熔化，并随后将其冷却，而由In合金球5形成In合金膜17。结果，半导体芯片18与散热器11即经由金属膜3和In合金膜17而接合。附带说明，加热时达到的最高温度被调整到例如约250±10℃。此外，例如利用输送带式加热炉来执行加热。另外，通过加热附接有夹具16的环氧板13，来执行环氧板13的实际固化。附带说明，通过利用例如温度控制槽来执行加热，将温度设定为例如约150±5℃，且将加热时间设定为例如约1小时。
优选地，In合金球5的量被调整成令In合金膜17具有约0.1mm至0.8mm的厚度。需要获得足够的接合强度，并且In合金膜17的厚度大得足以在形成期间防止合金溢流或流出。
接下来，如图1I所示，除去夹具16。在此之后，在陶瓷衬底4的外表面上形成焊料球14。形成焊料球14时的温度设定为例如约250±10℃。结果，即完成了如图4所示的半导体器件。
根据以上描述的第一实施例，因为用In合金膜17将散热器11与半导体芯片18相接合，所以从半导体芯片18到散热器11的导热率优良。这点也缘于以下事实：金属膜3上的In合金在熔化状态下润湿性高。
优选地，在构成In合金球5的In合金中，Sn、Pb、Bi、或Ag的比率为约0.1原子百分比(atom％)至20原子百分比。当Sn、Pb、Bi、或Ag的比率小于0.1原子百分比时，In合金的熔点低，并且In合金膜17有可能伴随着半导体芯片18发热而熔化。另一方面，当上述比率超过20原子百分比时，就可能有难以保持足够润湿性的情形。特别是在InAg的情况下，优选地，Ag的比率为5原子百分比至20原子百分比，并且最优选为10原子百分比至20原子百分比。
而传统的Pb-63％Sn(其中Sn的比率为63原子百分比)的导热率在85℃时为0.49(W/cm℃)，In-10％Ag(其中Ag的比率为10原子百分比)的导热率在85℃时为0.67(W/cm℃)。如上所述，能获得优良的导热率。因此，能够取得具有优良散热效果的半导体器件。附带说明，最近具有高性能的半导体芯片的操作温度为约100℃至150℃。另一方面，In-10％Ag的熔点为约230℃至240℃。因此，In-10％Ag膜相对于半导体芯片的发热而言是稳定的。
此外，散热器的材料不受特别限制，然而优选地，导热率等于或高于2(W·cm-1·k-1)。作为这类材料，例如，Cu、Al、Au等等即为例证。Cu、Al、及Au的导热率分别为4.01、3.17、及2.37(W·cm-1·k-1)。随后，作为散热器，例如，可使用镀有Au的基底材料Cu，或在与In合金膜接合的部分上形成有Au膜或Al膜的基底材料Al-SiC，或类似的基底材料。
(第二实施例)
接下来，将描述本发明的第二实施例。图5A至图5D为剖视图，按步骤顺序示出根据本发明第二实施例的用于制造半导体器件的方法。
在第二实施例中，首先如同第一实施例，执行直到形成金属膜3为止的处理(图1C)。接下来，如图5A所示，将In合金板15叠置于金属膜3之下并暂时固定。In合金板15的成分与第一实施例中In合金球5的成分相同。
接下来，如图5B所示，通过切割圆盘状半导体衬底1，而切割出多个半导体芯片18。半导体芯片18的平面形状例如为矩形，具有例如约15mm至20mm的边长。在图5B至图5D中，半导体衬底1的表面图示成面向下的，而背面为面向上的。
随后，如图5C所示，如同第一实施例，执行从将半导体芯片18置于陶瓷衬底4上(图1E)到将环氧板13实际固化(图1H)的处理。
接下来，如图5D所示，除去夹具16，并且在陶瓷衬底4的外表面上形成焊料球14。如同第一实施例，形成焊料球14时的温度设定为例如250±10℃。结果，完成了如图6所示的半导体器件。
通过如上所述的第二实施例，能够取得与第一实施例相同的效果。
接下来，将描述本发明的发明人实际进行的实验。在此实验中，进行了对形成于半导体芯片背面上的金属膜的In合金的熔化特性(润滑性能)的评估、基于刮擦测试(scratching test)的评估、及接合强度的评估。
为进行熔化特性的评估，将In-10％Ag球置于形成于半导体芯片背面上的金属膜上，用回流炉(reflow furnace)将In-10％Ag球熔化，并随后将其冷却，且以目视方式进行润湿性如何扩散的评估。此时，在半导体芯片的背面上形成各种金属膜。此外，在刮擦测试中，刮擦凝固的In-10％Ag膜，并研究此膜是否从金属膜上剥离。作为比较材料，使用Pb-63％Sn球进行同样的评估。随后，基于表1所示的标准进行评估。评估结果示于表2中。
[表1]
    评价     熔化特性     刮擦测试
    ◎     极其优良     无膜剥离
    ○ 优良
    △     膜剥离
    ×     差(流动)
[表2]
金属膜  In-10％Ag  Pb-63％Sn
 评价结果  评估数量  评价结果  评估数量
Ti 30～80/Ni 30～80/Ag 100～300 ◎ 6/6 ○ 9/9
Ti 50～150/Ag 10～100 ○ 6/6 ○ 6/6
Ni 50～150  △  4/4  ×  2/2
此处，表2中的“Ti 30～80/Ni 30～80/Ag 100～300”表示的是，在半导体芯片的背面上按顺序形成具有约30至80nm厚度的Ti膜、具有约30至80nm厚度的Ni膜、及具有约100至300nm厚度的Ag膜作为金属膜。“Ti50～150/Ag 10～100”表示的是，按顺序形成具有约50至150nm厚度的Ti膜以及具有约10至100nm厚度的Ag膜作为金属膜。“Ni 50～150”表示的是，形成具有约50至150nm厚度的Ni膜作为金属膜。此处，评估数量方框中所描述的分数的分母表示评估样品的数量，而分子表示用以取得评价结果的样品的数量。在每种组合中，分母和分子是相同的，而这意味着评价结果没有波动。
如表2所示，当使用In-10％Ag球时，可取得优良的熔化特性，而与金属膜的种类无关。当利用叠层膜作为金属膜时，在刮擦测试中没有膜剥离现象。另一方面，当使用Pb-63％Sn球并利用单层膜作为金属膜时，熔化特性低，并且在刮擦测试中发生膜剥离现象。
金属膜上的In合金膜起到接合材料和热界面材料(thermal interfacematerial)的作用。随后，根据In合金的熔化特性优良这一事实，可以认为，其与下面金属膜的互溶度和合金化程度高。对提高金属接合的可靠性来说，高互溶度、高合金化程度、及高混合化程度是必需的。因此可以说，如果In合金膜的熔化特性优良，则散热器与半导体芯片之间的导热率优良。另一方面，当在PbSn球置于单层金属膜上这类情况下熔化特性弱时，润湿性扩散程度就低，并且很可能球在凝固之后从金属膜上剥离。
为进行接合强度的评估，利用In-10％Ag球或Pb-63％Sn球将散热器金属接合到半导体芯片上并测量其强度。在测量时，用粘合剂(环氧树脂)将测试台固定到半导体芯片的表面上而不使用陶瓷衬底，并且进行破坏性测试。如果金属接合的强度不够大，在In-10％Ag膜或Pb-63％Sn膜与散热器之间的边界处就会发生剥离。另一方面，如果金属接合的强度足够大，则在边界上不大可能发生剥离，但在将测试台固定到半导体芯片上的粘合剂处会发生剥离。换句话说，在作为起始点的接合强度小的那一点处发生损坏。因此，通过评估损坏边界并测量损坏时施加的强度，就能够评估金属接合的状态。
在接合强度的评估中，对于那些具有优良熔化特性的化合物进行了评估。结果示于表3中。
[表3]
金属膜  In-10％Ag  Pb-63％Sn
Ti 30～80/Ni 30～80/Ag 100～300 68(kgf) 57(kgf)
Ti 50～150/Ag 10～100 103(kgf) 95(kgf) 87(kgf) 62(kgf)
Ni 50～150  13(kgf)  剥离
如表3所示，当形成In-10％Ag膜并用叠层膜作为金属膜时，能够取得足够的接合强度，且同时在粘合剂处发生剥离，并且剥离不发生在In-10％Ag膜附近。另一方面，当形成Pb-63％Sn膜并用单层膜作为金属膜时，剥离不发生在粘合剂处但是发生在Pb-63％Sn膜中。
根据这些结果，可得出以下结论，通过特别是利用叠层膜作为金属膜，例如通过用Ti膜和Ag膜构成的叠层膜或Ti膜、Ni膜、及Ag膜构成的叠层膜作为金属膜，并利用In-10％Ag球作为In合金球，能够实现具备高熔化特性(润滑性能)和足够强度的金属接合。
专利文献2公开了利用In或In-5重量百分比(weight％)Ag合金将W制成的圆盘状强化材料接合到硅半导体整流器件，然而，W材料不能起到散热部件的作用。这是因为W的导热率低至1.74(W·cm-1·k-1)。另外，专利文献2中所描述的In和In-5重量百分比Ag合金的熔点为约140至150℃，因此从热阻的观点看，这不能应用于最近的具有高性能的半导体芯片。
根据本发明，利用In合金膜进行半导体芯片与散热部件的接合，例如与散热器的接合。因此，能够有效地从半导体芯片散热。

Claims (19)

1.一种半导体器件，包括：
半导体芯片；
衬底，安装所述半导体芯片；以及
散热部件，设置在所述半导体芯片和所述衬底上，所述半导体芯片与所述散热部件以In合金膜相接合。
2.根据权利要求1所述的半导体器件，其中所述In合金膜的厚度为0.1mm至0.8mm。
3.根据权利要求1所述的半导体器件，其中所述In合金膜包含从Sn、Pb、Ag、及Bi构成的组中选取的至少一种元素。
4.根据权利要求1所述的半导体器件，其中所述In合金膜中In以外元素的比率为0.1原子百分比至20原子百分比。
5.根据权利要求1所述的半导体器件，其中所述In合金膜包含5原子百分比至20原子百分比的Ag。
6.根据权利要求1所述的半导体器件，还包括：金属膜，位于所述In合金膜与所述半导体芯片之间。
7.根据权利要求6所述的半导体器件，其中所述金属膜具有一层或多层膜，所述一层或多层膜包含从Ti、Cu、Ni、及Ag构成的组中选取的至少一种元素。
8.根据权利要求6所述的半导体器件，其中所述金属膜具有一层或多层膜，所述一层或多层膜包含从Ti、Ni、Pd、V、及Ag构成的组中选取的两种或更多种元素。
9.根据权利要求1所述的半导体器件，其中所述散热部件的导热率等于或大于2W·cm-1·k-1。
10.根据权利要求1所述的半导体器件，其中所述散热部件经由树脂接合到所述衬底。
11.一种用于制造半导体器件的方法，包括以下步骤：
将半导体芯片安装在衬底上；以及
用所述半导体芯片上的In合金膜，将散热部件接合到所述半导体芯片和所述衬底上。
12.根据权利要求11所述的用于制造半导体器件的方法，其中所述In合金膜的厚度为0.1mm至0.8mm。
13.根据权利要求11所述的用于制造半导体器件的方法，其中包含从Sn、Pb、Ag、及Bi构成的组中选取的至少一种元素的膜，用作所述In合金膜。
14.根据权利要求11所述的用于制造半导体器件的方法，其中In以外元素的比率为0.1原子百分比至20原子百分比的膜，用作所述In合金膜。
15.根据权利要求11所述的用于制造半导体器件的方法，其中包含5原子百分比至20原子百分比的Ag的膜，用作所述In合金膜。
16.根据权利要求11所述的用于制造半导体器件的方法，其中将所述散热部件接合到所述半导体芯片上的步骤包括以下步骤：
将In合金球置于所述半导体芯片上；
将所述散热部件置于所述In合金球上；
熔化所述In合金球；以及
通过凝固熔化的In合金来形成所述In合金膜。
17.根据权利要求11所述的用于制造半导体器件的方法，其中：
形成所述半导体芯片的步骤包括以下步骤：
在半导体衬底的一个表面上形成半导体元件；
将In合金板附接到所述半导体衬底的另一表面；以及
切割所述半导体衬底和所述In合金板；并且
将所述散热部件接合到所述半导体芯片上的步骤包括以下步骤：
将所述散热部件置于所述In合金板上；
熔化所述In合金板；以及
通过凝固熔化的In合金来形成所述In合金膜。
18.根据权利要求11所述的用于制造半导体器件的方法，其中当所述散热部件接合到所述半导体芯片上的时候，将金属膜置于所述In合金膜与所述半导体芯片之间。
19.根据权利要求11所述的用于制造半导体器件的方法，其中当所述散热部件接合到所述衬底和所述半导体芯片上的时候，将所述散热部件经由树脂接合到所述衬底。
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