KR970063745A - 캐패시터를 포함하는 반도체 장치 및 반도체 장치 제조 방법 - Google Patents
캐패시터를 포함하는 반도체 장치 및 반도체 장치 제조 방법 Download PDFInfo
- Publication number
- KR970063745A KR970063745A KR1019970006584A KR19970006584A KR970063745A KR 970063745 A KR970063745 A KR 970063745A KR 1019970006584 A KR1019970006584 A KR 1019970006584A KR 19970006584 A KR19970006584 A KR 19970006584A KR 970063745 A KR970063745 A KR 970063745A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- insulating film
- lower electrode
- semiconductor device
- undercoated
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract 22
- 238000004519 manufacturing process Methods 0.000 title claims 4
- 239000003990 capacitor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract 10
- 239000011229 interlayer Substances 0.000 claims abstract 9
- 239000010410 layer Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 10
- 238000009792 diffusion process Methods 0.000 claims 8
- 238000000059 patterning Methods 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8041160A JPH09232542A (ja) | 1996-02-28 | 1996-02-28 | 半導体装置およびその製造方法 |
| JP96-41160 | 1996-02-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970063745A true KR970063745A (ko) | 1997-09-12 |
Family
ID=12600681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970006584A KR970063745A (ko) | 1996-02-28 | 1997-02-28 | 캐패시터를 포함하는 반도체 장치 및 반도체 장치 제조 방법 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH09232542A (ja) |
| KR (1) | KR970063745A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100555483B1 (ko) * | 1999-09-03 | 2006-03-03 | 삼성전자주식회사 | 수소 열처리를 포함하는 반도체장치의 커패시터 제조방법 |
| KR100868607B1 (ko) * | 2008-02-21 | 2008-11-13 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 장치 및 그 제조 방법 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11330397A (ja) | 1998-05-20 | 1999-11-30 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| KR100306908B1 (ko) * | 1998-12-30 | 2001-12-17 | 김영환 | 반도체장치의제조방법 |
| US6144053A (en) * | 1999-01-20 | 2000-11-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a capacitor with a high dielectric constant film |
| KR100309077B1 (ko) * | 1999-07-26 | 2001-11-01 | 윤종용 | 삼중 금속 배선 일 트랜지스터/일 커패시터 및 그 제조 방법 |
| JP4493796B2 (ja) * | 2000-03-30 | 2010-06-30 | 東京エレクトロン株式会社 | 誘電体膜の形成方法 |
| KR100385462B1 (ko) * | 2000-06-30 | 2003-05-27 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 형성방법 |
-
1996
- 1996-02-28 JP JP8041160A patent/JPH09232542A/ja active Pending
-
1997
- 1997-02-28 KR KR1019970006584A patent/KR970063745A/ko not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100555483B1 (ko) * | 1999-09-03 | 2006-03-03 | 삼성전자주식회사 | 수소 열처리를 포함하는 반도체장치의 커패시터 제조방법 |
| KR100868607B1 (ko) * | 2008-02-21 | 2008-11-13 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 장치 및 그 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09232542A (ja) | 1997-09-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |