KR970023759A - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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KR970023759A
KR970023759A KR1019960030596A KR19960030596A KR970023759A KR 970023759 A KR970023759 A KR 970023759A KR 1019960030596 A KR1019960030596 A KR 1019960030596A KR 19960030596 A KR19960030596 A KR 19960030596A KR 970023759 A KR970023759 A KR 970023759A
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semiconductor device
oxide film
silicon oxide
atom
metal
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마사즈미 마츄우라
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키타오카 타카시
미쓰비시 덴키 가부시끼 가이샤
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Abstract

막 수축이 감소하고. 막 스트레스가 저감되도록 개량된 층간절연막을 갖는 반도체 장치를 제공하기 위해, 기판(1)상에 금속배선(2a, 2b)가 형성되어 있다. 금속배선(2a, 2b)를 덮도록, 또한 금속배선(2a)와 금속배선(2b) 사이의 틈을 매립하도록, 기판(1)상에 실리콘산화막(4)이 마련되어 있다. 실리콘산화막(4)의 화학구조식은 Si-F결합을 포함하고 있다.

Description

반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도1-3은 본 발명의 실시예 1에 관한 반도체장치의 제조방법의 순서의 제1-3의 공정 각각에 있어서의 반도체장치의 단면도.

Claims (12)

  1. 기판(1), 상기 기판(1)상에 형성된 제1의 금속배선(2a)과 제2의 금속배선(2b), 상기 기판(1)상에 형성되어 상기 제1 및 제2의 금속배선(2a, 2b)을 덮고, 또한 상기 제1의 금속배선(2a)와 상기 제2의 금속배선(2b)의 틈 사이를 매립하는, 실리콘산화막(4)을 포함하고, 상기 실리콘산화막(4)의 화학구조식은 Si-F결합을 포함하는 반도체장치.
  2. 제1항에 있어서, 상기 실리콘산화막(4)의 화학구조식은 산소원자로 서로 연결된 제1의 실리콘원자와 제2의 실리콘원자를 갖는 단위를 갖고, 상기 제1의 실리콘원자에는 또, 2개의 산소원자가 결합되어 있고, 상기 제2의 실리콘 원자에는 1∼3개의 불소원자가 결합되어 있는 반도체장치.
  3. 제1항에 있어서, 상기 제1 및 제2의 금속배선(2a, 2b)상에 놓여있는 상기 실리콘산화막(4)의 두께를 a라 하고, 상기 기판(1)상에 놓여있고 또한 상기 제1의 금속배선(2a)과 상기 제2의 금속배선(2b) 사이에 놓여 있는 상기 실리콘산화막(4) 두께를 b라 할때, 부등식 a<b이 성립하는 반도체장치.
  4. 제1항에 있어서, 상기 실리콘산화막(4)중에는 붕소원자 또는 인원자가 포함되어 있는 반도체장치.
  5. 제4항에 있어서, 상기 붕소원자 또는 인원자는 5몰%∼10몰% 포함되어 있는 반도체장치.
  6. 제1항에 있어서, 상기 제1및 제2의 금속배선(2a, 2b)을 피복하는 플라즈마 산화막을 더 포함하는 반도체장치.
  7. 금속배선(2a, 2b)가 그 위에 형성된 기판(1)을 준비하는 공정, 불소원자가 결합한 실리콘원자를 갖는 원료가 스와 과산화수소와의 혼합가스를 사용하는 화학기상성장법에 의해 상기 금속배선(2a 2b)을 덮도록, 상기 기판(1)상에 실리콘산화막(4)을 형성하는 공정을 포함하는 반도체장치의 제조방법.
  8. 제7항에 있어서, 상기 원료가스로서, 디플루오르실란을 사용하는 반도체장치의 제조방법.
  9. 제7항에 있어서, 상기 원료가스로서, 트리플루오르실란 또는 모노플루오르실란을 사용하는 반도체장치의 제조방법.
  10. 제7항에 있어서, 상기 원료가스로서, 플루오르알콕시실란을 사용하는반도체장치의 제조방법.
  11. 제7항에 있어서, 상기 실리콘산화막(4)은 -10℃∼100℃의 온도에서 형성되는 반도체장치의 제조방법.
  12. 제7항에 있어서, 상기 실리콘산화막(4)은 200mTorr∼600Torr의 압력하에서 형성되는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960030596A 1995-10-23 1996-07-26 반도체장치의 제조방법 KR100259314B1 (ko)

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JP7274010A JPH09116011A (ja) 1995-10-23 1995-10-23 半導体装置およびその製造方法
JP95-274010 1995-10-23

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