KR960043046A - 반도체 소자의 게이트 전극 형성방법 - Google Patents

반도체 소자의 게이트 전극 형성방법 Download PDF

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Publication number
KR960043046A
KR960043046A KR1019950012709A KR19950012709A KR960043046A KR 960043046 A KR960043046 A KR 960043046A KR 1019950012709 A KR1019950012709 A KR 1019950012709A KR 19950012709 A KR19950012709 A KR 19950012709A KR 960043046 A KR960043046 A KR 960043046A
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KR
South Korea
Prior art keywords
gate electrode
forming
semiconductor device
tungsten
formation method
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KR1019950012709A
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English (en)
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KR100187681B1 (ko
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정성희
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김주용
현대전자산업 주식회사
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Priority to KR1019950012709A priority Critical patent/KR100187681B1/ko
Publication of KR960043046A publication Critical patent/KR960043046A/ko
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Publication of KR100187681B1 publication Critical patent/KR100187681B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 반도체 소자의 게이트 전극 형성방법이 개시된다.
본 발명은 다이클로로사일렌 텅스텐 실리사이드 증착공정시 모노사일렌을 첨가하여 그레인 바운더리에 익세스 실리콘 및 실리콘 그레인이 형성되게 하므로써, 패턴닝공정으로 텅스텐 폴리사이드 구조의 게이트 전극을 형성한 후, 열처리공정중 플루오린 이온이 게이트 산화막으로 이동하는 것을 방지하여 소자의 수율 및 신뢰성을 증대시킬 수 있다.

Description

반도체 소자의 게이트 전극 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1a 도 내지 제1c도는 본 발명에 의한 반도체 소자의 게이트 전극 형성방법을 설명하기 위해 도시한 소자의 단면도.

Claims (1)

  1. 반도체 소자의 게이트 전극 형성방법에 있어서, 반도체 기판상에 게이트 산화막을 형성하고, 상기 게이트 산화막상에 폴리실리콘층을 형성하는 단계와, 상기 폴리실리콘층상에 텅스텐 헥사플루오라이드 가스, 다이클로로사일렌 가스 및 모노사일렌 가스를 사용하여 텅스텐 실리사이드층을 형성하는 단계와, 게이트 전극 마스크를 사용한 패턴닝공정과 열처리공정으로 상기 텅스텐 실리사이드층과 상기 폴리실리콘층으로 된 텅스텐 폴리사이드 구조의 게이트 전극을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 게이트 전극 형성 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950012709A 1995-05-22 1995-05-22 반도체 소자의 게이트 전극 형성방법 KR100187681B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950012709A KR100187681B1 (ko) 1995-05-22 1995-05-22 반도체 소자의 게이트 전극 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950012709A KR100187681B1 (ko) 1995-05-22 1995-05-22 반도체 소자의 게이트 전극 형성방법

Publications (2)

Publication Number Publication Date
KR960043046A true KR960043046A (ko) 1996-12-21
KR100187681B1 KR100187681B1 (ko) 1999-06-01

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Application Number Title Priority Date Filing Date
KR1019950012709A KR100187681B1 (ko) 1995-05-22 1995-05-22 반도체 소자의 게이트 전극 형성방법

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KR100187681B1 (ko) 1999-06-01

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