KR970003614A - 반도체 소자의 폴리사이드층 형성방법 - Google Patents
반도체 소자의 폴리사이드층 형성방법 Download PDFInfo
- Publication number
- KR970003614A KR970003614A KR1019950015023A KR19950015023A KR970003614A KR 970003614 A KR970003614 A KR 970003614A KR 1019950015023 A KR1019950015023 A KR 1019950015023A KR 19950015023 A KR19950015023 A KR 19950015023A KR 970003614 A KR970003614 A KR 970003614A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- tungsten silicide
- silicide layer
- forming
- crystal structure
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 title claims abstract description 5
- 230000015572 biosynthetic process Effects 0.000 title 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims abstract 9
- 229910021342 tungsten silicide Inorganic materials 0.000 claims abstract 9
- 239000013078 crystal Substances 0.000 claims abstract 6
- 239000012535 impurity Substances 0.000 claims abstract 4
- 238000005468 ion implantation Methods 0.000 claims abstract 3
- UZPZYFDULMKDMB-UHFFFAOYSA-N 1,2-dichloro-3,4-dimethylbenzene Chemical group CC1=CC=C(Cl)C(Cl)=C1C UZPZYFDULMKDMB-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 229920005591 polysilicon Polymers 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32105—Oxidation of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 반도체 소자의 폴리사이드층 형성방법이 개시된다.
본 발명은 디클로로사일렌 가스를 베이스 가스로 하여 헥사고날 결정구조가 부분적으로 형성된 아몰포스 상태의 텅스텐실리사이드층을 형성하고, 불순물 이온주입공정에 의해 부분적으로 형성된 헥사고날 결정구조를 아몰포스 상태가 되게하여 순수한 아몰포스 상태의 텅스텐 실리사이드층으로 되게 한 후, 열처리공정을 실시하여 테트라고날 텅스텐 실리사이드층을 형성한다.
따라서, 본 발명은 높은 층덮힘과 낮은 저항을 갖는 텅스텐 실리사이드층을 형성할 수 있어 소자의 신뢰성 및 전기적 특성을 개선시킬 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3A 내지 3C도는 본 발명에 의한 반도체 소자의 폴리사이드층 형성방법을 설명하기 위해 도시한 소자의 단면도.
Claims (3)
- 반도체 소자의 폴리사이드층 형성방법에 있어서, 웨이퍼상에 언도프트 폴리실리콘층을 형성하고 상기 언도프트 폴리실리콘층상에 디클로로사일렌 가스와 텅스텐 헥사플루오라이드 가스를 사용하여 헥사고날 결정구조가 부분적으로 형성된 아몰포스 상태의 텅스텐 실리사이드층을 형성하는 단계와, 상기 헥사고날 결정구조가 부분적으로 형성된 아몰포스 상태의 텅스텐 실리사이드층상에 산화막을 형성하는 단계와, 상기 헥사고날 결정구조가 부분적으로 형성된 아몰포스상태의 텅스텐 실리사이드층이 순수한 아몰포스 상태의 텅스텐 실리사이드층으로 변환되도록 하고, 상기 언도프트 폴리실리콘층이 도프트 폴리실리콘층으로 변환되도록 하기 위하여 불순물 이온주입 공정을 실시하는 단계와, 상기 아몰포스 상태의 텅스텐 실리사이드층을 열처리 공정으로 테트라고날 결정구조의 텅스텐 실리사이드층으로 변환시켜 폴리사이드층의 상부층을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 폴리사이드층 형성방법.
- 제1항에 있어서, 상기 산화막은 300 내지 800Å의 두께로 형성되는 것을 특징으로 하는 반도체 소자의 폴리사이드층 형성방법.
- 제1항에 있어서, 상기 불순물 이온주입 공정시 사용되는 불순물 이온은 P, As 및 B 이온중 어느 하나인 것을 특징으로 하는반도체 소자의 폴리사이드층 형성방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950015023A KR100187659B1 (ko) | 1995-06-08 | 1995-06-08 | 반도체 소자의 폴리사이드층 형성방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950015023A KR100187659B1 (ko) | 1995-06-08 | 1995-06-08 | 반도체 소자의 폴리사이드층 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970003614A true KR970003614A (ko) | 1997-01-28 |
KR100187659B1 KR100187659B1 (ko) | 1999-06-01 |
Family
ID=19416643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950015023A KR100187659B1 (ko) | 1995-06-08 | 1995-06-08 | 반도체 소자의 폴리사이드층 형성방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100187659B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020002912A (ko) * | 2000-06-30 | 2002-01-10 | 박종섭 | 반도체 소자의 제조방법 |
KR100477826B1 (ko) * | 1997-12-27 | 2005-07-07 | 주식회사 하이닉스반도체 | 폴리사이드구조의전도막형성방법 |
-
1995
- 1995-06-08 KR KR1019950015023A patent/KR100187659B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100477826B1 (ko) * | 1997-12-27 | 2005-07-07 | 주식회사 하이닉스반도체 | 폴리사이드구조의전도막형성방법 |
KR20020002912A (ko) * | 2000-06-30 | 2002-01-10 | 박종섭 | 반도체 소자의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
KR100187659B1 (ko) | 1999-06-01 |
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