KR960042940A - 불순물 접합영역 형성방법 - Google Patents
불순물 접합영역 형성방법 Download PDFInfo
- Publication number
- KR960042940A KR960042940A KR1019950012740A KR19950012740A KR960042940A KR 960042940 A KR960042940 A KR 960042940A KR 1019950012740 A KR1019950012740 A KR 1019950012740A KR 19950012740 A KR19950012740 A KR 19950012740A KR 960042940 A KR960042940 A KR 960042940A
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- South Korea
- Prior art keywords
- semiconductor substrate
- junction region
- impurity junction
- insulating film
- forming
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000012535 impurity Substances 0.000 title claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 title claims 4
- 239000004065 semiconductor Substances 0.000 claims abstract 12
- 239000000758 substrate Substances 0.000 claims abstract 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract 9
- 238000002955 isolation Methods 0.000 claims abstract 5
- 125000006850 spacer group Chemical group 0.000 claims abstract 5
- 150000002500 ions Chemical class 0.000 claims abstract 4
- 238000005280 amorphization Methods 0.000 claims abstract 2
- 238000005468 ion implantation Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/061—Gettering-armorphous layers
Abstract
본 발명은 불순물 접합영역 형성방법에 관한 것으로, 반도체기판에 소자분리절연막, 게이트산화막, 게이트전극 및 절연막 스페이서를 순차적으로 형성하고 상기 절연막 스페이서와 상기 소자분리절연막의 근접부분을 노출시키는 제1감광막패턴을형성한 다음, 상기 제1감광막패턴을 마스크로하여 상기 반도체기판을 선손상화시키과 상기 제1감광막패턴과 상이 반대인 제2감광막패턴을 이용하여 상기 반도체기판을 선비정질화시킴으로써 상기 선손상화공정과 선비정질화공정시 무거운 이온의 측면 흩어짐으로 인하여 상기 선손상화된 영역에 전재하는 베이컨시와 선비정질화된 영역 하단에 인터스티셜이 풍부한 영역의 공존영역을 형성한 다음, 상기 반도체기판 상부에 형성된 상부구조물을 마스크로하여 상기 반도체기판에 불순물을 이온주입해 얇은 불순물 접합영역을 형성하고 후공정에서 수반되는 열공정으로 인하여 발생되는 확장결함의 폭을 감소시킴으로써 쇼트채널효과 및 펀치쓰루등의 현상을 없애고 접합누설전류를 감소시켜 반도체소자의 특성을 향상시킬 수 있는 기술이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2A도 내지 제2C도는 본 발명의 실시예에 따른 불순물 접합영역 형성방법을 도시한 단면도.
Claims (7)
- 반도체기판에 소자분리절연막, 게이트산화막, 게이트전극 및 절연막 스페이서를 순차적으로 형성하는 공정과, 상기 반도체기판 상부에 제1감광막패턴을 형성하는 공정과, 상기 제1감광막패턴을 마스크로하여 상기 반도체기판의 노출된 부분을 선손상화시키는 공정과, 상기 제1감광막패턴을 제거하는 공정과, 상기 제1감광막패턴과 상이 반대인 제2감광막패턴을 형성하는 공정과, 상기 제2감광막패턴을 마스크로하여 상기 반도체기판의 노출된 부분을 선비정질화시키는 공정과, 상기 제2감광막패턴을 제거하는 공정과, 상기 소자분리절연막, 게이트전극 및 절연막 스페이서를 마스크로하여 상기 반도체기판에 불순물을 이온주입하는 공정을 포함하는 불순물 접합영역 형성방법.
- 제1항에 있어서, 상기 제1감광막패턴은 상기 절연막 스페이서와 소자분리절연막 근접부분을 노출시키는 것을 특징으로하는 불순물 접합영역 형성방법.
- 제1항에 있어서, 상기 선손상화공정은 무거운 이온이 비정질화시키는 임계주입량 미만으로 주입되는 것을 특징으로하는 불순물 접합영역 형성방법.
- 제3항에 있어서, 상기 무거운 이온은 실리콘, 게르마늄, 비소, 인듐, 안티몸 등등으로 이루어지는 군에서 임의의 한가지가 사용되는 것을 특징으로 하는 불순물 접합영역 형성방법.
- 제1항에 있어서, 상기 선손상화공정은 상기 반도체기판의 불순물 접합영역 형성시 사용되는 이온주입에너지의 4배 내지 6배로 실시되는 것을 특징으로 하는 불순물 접합영역 형성방법.
- 제1항에 있어서, 상기 선비정질화공정은 상기 반도체기판의 불순물 접합영역 형성시 사용되는 이온주입에너지의 2배 내지 2.5배로 실시되는 것을 특징으로 하는 불순물 접합영역 형성방법.
- 제1항에 있어서, 상기 불순물은 BF2이 사용되는 것을 특징으로 하는 불순물 접합영역 형성방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950012740A KR0144493B1 (ko) | 1995-05-22 | 1995-05-22 | 불순물 접합 영역 형성방법 |
TW085105912A TW373270B (en) | 1995-05-22 | 1996-05-18 | Method for forming impurity junction regions of semiconductor device |
US08/651,856 US5668020A (en) | 1995-05-22 | 1996-05-21 | Method for forming impurity junction regions of semiconductor device |
JP8126134A JP2834712B2 (ja) | 1995-05-22 | 1996-05-21 | 半導体装置の不純物接合領域形成方法 |
CN96106670A CN1079165C (zh) | 1995-05-22 | 1996-05-22 | 用于形成半导体器件杂质结区的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950012740A KR0144493B1 (ko) | 1995-05-22 | 1995-05-22 | 불순물 접합 영역 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960042940A true KR960042940A (ko) | 1996-12-21 |
KR0144493B1 KR0144493B1 (ko) | 1998-08-17 |
Family
ID=19415040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950012740A KR0144493B1 (ko) | 1995-05-22 | 1995-05-22 | 불순물 접합 영역 형성방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5668020A (ko) |
JP (1) | JP2834712B2 (ko) |
KR (1) | KR0144493B1 (ko) |
CN (1) | CN1079165C (ko) |
TW (1) | TW373270B (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2848439B2 (ja) * | 1995-11-10 | 1999-01-20 | 日本電気株式会社 | 半導体装置の製造方法 |
US9087773B2 (en) * | 2013-09-11 | 2015-07-21 | Taiwan Semiconductor Manufacturing Company Limited | Implant region definition |
US9780250B2 (en) * | 2016-01-14 | 2017-10-03 | Varian Semiconductor Equipment Associates, Inc. | Self-aligned mask for ion implantation |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60182171A (ja) * | 1984-02-29 | 1985-09-17 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
US5223445A (en) * | 1990-05-30 | 1993-06-29 | Matsushita Electric Industrial Co., Ltd. | Large angle ion implantation method |
EP0607658A3 (en) * | 1992-11-13 | 1995-08-30 | At & T Corp | Manufacturing of a MOSFET. |
-
1995
- 1995-05-22 KR KR1019950012740A patent/KR0144493B1/ko not_active IP Right Cessation
-
1996
- 1996-05-18 TW TW085105912A patent/TW373270B/zh not_active IP Right Cessation
- 1996-05-21 JP JP8126134A patent/JP2834712B2/ja not_active Expired - Fee Related
- 1996-05-21 US US08/651,856 patent/US5668020A/en not_active Expired - Lifetime
- 1996-05-22 CN CN96106670A patent/CN1079165C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR0144493B1 (ko) | 1998-08-17 |
TW373270B (en) | 1999-11-01 |
JP2834712B2 (ja) | 1998-12-14 |
CN1079165C (zh) | 2002-02-13 |
US5668020A (en) | 1997-09-16 |
JPH09237765A (ja) | 1997-09-09 |
CN1140330A (zh) | 1997-01-15 |
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