KR970013120A - 박막 트랜지스터 및 그 제조 방법 - Google Patents

박막 트랜지스터 및 그 제조 방법 Download PDF

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Publication number
KR970013120A
KR970013120A KR1019950025269A KR19950025269A KR970013120A KR 970013120 A KR970013120 A KR 970013120A KR 1019950025269 A KR1019950025269 A KR 1019950025269A KR 19950025269 A KR19950025269 A KR 19950025269A KR 970013120 A KR970013120 A KR 970013120A
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South Korea
Prior art keywords
thin film
forming
gate electrode
film transistor
manufacturing
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KR1019950025269A
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English (en)
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KR0162147B1 (ko
Inventor
조광행
이순영
조성갑
용창범
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김주용
현대전자산업 주식회사
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Priority to KR1019950025269A priority Critical patent/KR0162147B1/ko
Publication of KR970013120A publication Critical patent/KR970013120A/ko
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Publication of KR0162147B1 publication Critical patent/KR0162147B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

1. 청구범위에 기재된 발명이 속한 기술 분야 ; 반도체 소자 제조 방법. 2. 발명이 해결하려고 하는 기술적 과제 ; 박막 트랜지스터 제조시, 반도체 소자가 고집적화되면서 핫 캐리어 효과 및 쇼트 채널 효과등에 의해 소자의 특성이 저하되고 공정과정이 복잡하다는 문제점을 해결하고자 함. 3. 발명의 해결 방법의 요지 ; 두 개의 드레인과 한 개의 소스 구조를 이루면서 채널을 사면을 따라 형성하므로써, 높은 전류를 흐르게 하고 채널 길이를 효과적으로 조절할 수 있도록 하여 핫 캐리어 효과등에 의해 소자 특성이 저하되는 것을 방지하고 제조 공정도 간단한 박막 트랜지스터를 제조하고자 함. 4. 발명의 중요한 용도 ; 박막 트랜지스터를 제조하는 데 주료 이요됨.

Description

박막 트랜지스터 및 그 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1d도 내지 제1f도는 본 발명의 박막 트랜지스터 제조 방법에 따른 공정도.

Claims (2)

  1. 박막 트랜지스터를 제조하는 방법에 있어서, 반도체 기판 상에 산화막을 성장시키는 단계와, 소스 영역을 형성하기 위한 제1 포토레지스트 패턴을 형성하고 이를 식각 베리어로 이용하여 상기 산화막을 경사지게 식각하는 단계와,잔류 포토레지스트를 제거한 후, 반도체 기판에 소스 영역을 형성하기 위한 이온주입을 실시하는 단계와, 드레인용 도핑된 폴리실리콘을 증착하는 단계와, 소스영역 상의 상기 도핑된 폴리실리콘을 두 개의 드레인으로 분리하기 위한 제2 포토레지스트 패턴을 형성하는 단계와, 이를 식각 베리어로 이용하여 상기 드레인용 폴리실리콘을 식각하는 단계와, 잔류 포토레지스트를 제거하는 게이트 산화막을 증착한 후 게이트용 폴리실리콘을 증착하는 단계와, 게이트 전극을 형성하기 위한 제3 포토레지스트 패턴을 형성하고 이를 식각 배리어로 이용하여 게이트용 폴리실리콘을 실각하여 게이트 전극을 형성하는 단계 및 드레인 영역을 형성하기 위한 이온주입을 실시한 후 잔류 포토레지스트를 제거하는 단계를 포함해서 이루어진 박막 트랜지스터 제조 방법.
  2. 박막 트랜지스터에 있어서, T자형으로 이루어진 게이트 전극과, 상기 게이트 전극 하부의 게이트 산화막과, 상기 게이트 전극 양쪽에 형성된 두 개의 드레인 영역과, 반도체 기판상에 형성된 하나의 소스 영역과, 상기 T자형 게이트 전극을 따라 상기 소스 영역과 상기 드레인 영역 상이에 경사지게 형성된 두개의 채널영역을 포함해서 이루어진 것을 특징으로 하는 박막 트랜지스터.
KR1019950025269A 1995-08-14 1995-08-14 박막 트랜지스터 및 그 제조방법 KR0162147B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950025269A KR0162147B1 (ko) 1995-08-14 1995-08-14 박막 트랜지스터 및 그 제조방법

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Application Number Priority Date Filing Date Title
KR1019950025269A KR0162147B1 (ko) 1995-08-14 1995-08-14 박막 트랜지스터 및 그 제조방법

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KR970013120A true KR970013120A (ko) 1997-03-29
KR0162147B1 KR0162147B1 (ko) 1999-02-01

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KR100451152B1 (ko) * 1997-12-26 2005-04-19 엘지전자 주식회사 다결정실리콘박막트랜지스터및그제조방법

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