KR960035824A - 타이타늄 카본 나이트라이드 게이트전극 형성방법 - Google Patents

타이타늄 카본 나이트라이드 게이트전극 형성방법 Download PDF

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Publication number
KR960035824A
KR960035824A KR1019950007050A KR19950007050A KR960035824A KR 960035824 A KR960035824 A KR 960035824A KR 1019950007050 A KR1019950007050 A KR 1019950007050A KR 19950007050 A KR19950007050 A KR 19950007050A KR 960035824 A KR960035824 A KR 960035824A
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South Korea
Prior art keywords
gate electrode
forming
ticn
depositing
carbon nitride
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KR1019950007050A
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English (en)
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KR0147626B1 (ko
Inventor
주석호
백충렬
이기홍
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김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950007050A priority Critical patent/KR0147626B1/ko
Priority to TW085103399A priority patent/TW284915B/zh
Priority to US08/619,361 priority patent/US5795817A/en
Priority to DE19612120A priority patent/DE19612120A1/de
Priority to GB9606719A priority patent/GB2299452B/en
Priority to JP07654796A priority patent/JP3553725B2/ja
Publication of KR960035824A publication Critical patent/KR960035824A/ko
Priority to US08/960,290 priority patent/US5965911A/en
Application granted granted Critical
Publication of KR0147626B1 publication Critical patent/KR0147626B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Composite Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

신규한 타이타늄 카본 나이트라이드(TiCN) 게이트전극 형성방법이 개시되어 있다. 본 발명은 반도체 기판 상에 게이트절연막을 형성하는 단계와 스퍼터링 방법에 의해 상기 게이트절연막 상에 TiCN을 증착함으로써 게이트전극을 형성하는 단계를 구비한다. 본 발명에 의하면, 종래방법보다 낮은 비저항과 높은 절연파괴전압 특성을 얻을 수 있다.

Description

타이타늄 카본 나이트라이드 게이트전극 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 TiCN 게이트전극 형성방법을 설명하기 위하여 도시한 스퍼터링 장비의 개략도이다.
제2도는 본 발명의 TiCN 게이트전극을 이용한 게이트 산화막의 절연파괴특성을 알아보기 위해 제작한 시료의 단면도이다.

Claims (4)

  1. 반도체기판 상에 게이트절연막을 형성하는 단계; 및 스퍼터링 방법에 의해 상기 게이트절연막 상에 TiCN을 증착함으로써 게이트전극을 형성하는 단계를 구비하는 것을 특징으로 하는 반도체장치의 제조방법.
  2. 제1항에 있어서, 상기 TiCN은 600℃의 고온에서 아르곤 가스분위기가 반응성 스퍼터링에 의해 질소와 메탄가스를 사용하여 형성하는 것을 특징으로 하는 반도체 장치의 제조방법.
  3. 제1항에 있어서, 상기 TiCN을 증착한 후, 그 위에 저저항의 금속물질을 증착하는 단계를 더 구비하여, 그 위에 저저항의 금속물질을 증착하는 단계를 더 구비하여 상기 TiCN과 저저항의 금속물질로 이루어진 게이트전극을 형성하는 것을 특징으로 하는 반도체장치의 제조방법.
  4. 제3항에 있어서, 상기 저저항의 금속물질은 텅스텐(W), 텅스텐 실리사이드(WSix), 타이타늄 실리사이드(TiSix), 및 구리(Cu) 군에서 선택된 어느 하나인 것을 특징으로 하는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950007050A 1995-03-30 1995-03-30 타이타늄 카본 나이트라이드 게이트전극 형성방법 KR0147626B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019950007050A KR0147626B1 (ko) 1995-03-30 1995-03-30 타이타늄 카본 나이트라이드 게이트전극 형성방법
TW085103399A TW284915B (ko) 1995-03-30 1996-03-21
US08/619,361 US5795817A (en) 1995-03-30 1996-03-21 MOS transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereof
DE19612120A DE19612120A1 (de) 1995-03-30 1996-03-27 MOS-Transistor und Verfahren zu seiner Herstellung
GB9606719A GB2299452B (en) 1995-03-30 1996-03-29 MOS transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereof
JP07654796A JP3553725B2 (ja) 1995-03-30 1996-03-29 Ｍｏｓトランジスタ及びその製造方法
US08/960,290 US5965911A (en) 1995-03-30 1997-10-29 Mos transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950007050A KR0147626B1 (ko) 1995-03-30 1995-03-30 타이타늄 카본 나이트라이드 게이트전극 형성방법

Publications (2)

Publication Number Publication Date
KR960035824A true KR960035824A (ko) 1996-10-28
KR0147626B1 KR0147626B1 (ko) 1998-11-02

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Country Status (6)

Country Link
US (2) US5795817A (ko)
JP (1) JP3553725B2 (ko)
KR (1) KR0147626B1 (ko)
DE (1) DE19612120A1 (ko)
GB (1) GB2299452B (ko)
TW (1) TW284915B (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3906020B2 (ja) * 2000-09-27 2007-04-18 株式会社東芝 半導体装置及びその製造方法
JP3408527B2 (ja) * 2000-10-26 2003-05-19 松下電器産業株式会社 半導体装置の製造方法
US6300177B1 (en) 2001-01-25 2001-10-09 Chartered Semiconductor Manufacturing Inc. Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materials
TWI222742B (en) * 2003-05-05 2004-10-21 Ind Tech Res Inst Fabrication and structure of carbon nanotube-gate transistor
US7030430B2 (en) * 2003-08-15 2006-04-18 Intel Corporation Transition metal alloys for use as a gate electrode and devices incorporating these alloys
US20050095763A1 (en) * 2003-10-29 2005-05-05 Samavedam Srikanth B. Method of forming an NMOS transistor and structure thereof
US7064050B2 (en) * 2003-11-28 2006-06-20 International Business Machines Corporation Metal carbide gate structure and method of fabrication
US7667277B2 (en) * 2005-01-13 2010-02-23 International Business Machines Corporation TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
US7851915B2 (en) * 2007-04-30 2010-12-14 Stmicroelectronics S.A. Electronic component comprising a titanium carbonitride (TiCN) barrier layer and process of making the same
JP5375497B2 (ja) * 2009-10-01 2013-12-25 トヨタ自動車株式会社 半導体装置、及び、半導体装置の製造方法
KR101094386B1 (ko) * 2009-11-30 2011-12-15 주식회사 하이닉스반도체 반도체 장치의 전극 및 캐패시터 제조 방법
KR101094375B1 (ko) * 2009-11-30 2011-12-15 주식회사 하이닉스반도체 탄소함유 전극을 갖는 반도체 장치 및 그 제조 방법
WO2015068264A1 (ja) * 2013-11-08 2015-05-14 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
CN107680938B (zh) * 2016-08-01 2021-05-28 中芯国际集成电路制造(上海)有限公司 半导体装置的制造方法
US11152207B2 (en) * 2018-07-26 2021-10-19 Tokyo Electron Limited Method of forming titanium nitride films with (200) crystallographic texture

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065733B2 (ja) * 1984-08-27 1994-01-19 アメリカン テレフオン アンド テレグラフ カムパニ− 集積回路デバイスおよびその製造方法
JPH081950B2 (ja) * 1986-11-21 1996-01-10 株式会社東芝 半導体装置の製造方法
JP2624736B2 (ja) * 1988-01-14 1997-06-25 株式会社東芝 半導体装置の製造方法
JPH02296141A (ja) * 1989-05-10 1990-12-06 Terumo Corp 機能性素子及びそれを備えたｆｅｔセンサ
KR0126457B1 (ko) * 1992-01-08 1997-12-26 기타오카 다카시 집적회로, 그 제조방법 및 그 박막형성장치
US5246881A (en) * 1993-04-14 1993-09-21 Micron Semiconductor, Inc. Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of low bulk resistivity
US5364803A (en) * 1993-06-24 1994-11-15 United Microelectronics Corporation Method of preventing fluorine-induced gate oxide degradation in WSix polycide structure
US5496762A (en) * 1994-06-02 1996-03-05 Micron Semiconductor, Inc. Highly resistive structures for integrated circuits and method of manufacturing the same
US5604140A (en) * 1995-05-22 1997-02-18 Lg Semicon, Co. Ltd. Method for forming fine titanium nitride film and method for fabricating semiconductor element using the same

Also Published As

Publication number Publication date
JPH08274334A (ja) 1996-10-18
GB2299452B (en) 1999-03-10
DE19612120A1 (de) 1996-10-02
US5965911A (en) 1999-10-12
JP3553725B2 (ja) 2004-08-11
GB2299452A (en) 1996-10-02
US5795817A (en) 1998-08-18
GB9606719D0 (en) 1996-06-05
TW284915B (ko) 1996-09-01
KR0147626B1 (ko) 1998-11-02

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