TW284915B - - Google Patents
Info
- Publication number
- TW284915B TW284915B TW085103399A TW85103399A TW284915B TW 284915 B TW284915 B TW 284915B TW 085103399 A TW085103399 A TW 085103399A TW 85103399 A TW85103399 A TW 85103399A TW 284915 B TW284915 B TW 284915B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950007050A KR0147626B1 (ko) | 1995-03-30 | 1995-03-30 | 타이타늄 카본 나이트라이드 게이트전극 형성방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW284915B true TW284915B (zh) | 1996-09-01 |
Family
ID=19410919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085103399A TW284915B (zh) | 1995-03-30 | 1996-03-21 |
Country Status (6)
Country | Link |
---|---|
US (2) | US5795817A (zh) |
JP (1) | JP3553725B2 (zh) |
KR (1) | KR0147626B1 (zh) |
DE (1) | DE19612120A1 (zh) |
GB (1) | GB2299452B (zh) |
TW (1) | TW284915B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3906020B2 (ja) * | 2000-09-27 | 2007-04-18 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP3408527B2 (ja) * | 2000-10-26 | 2003-05-19 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6300177B1 (en) | 2001-01-25 | 2001-10-09 | Chartered Semiconductor Manufacturing Inc. | Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materials |
TWI222742B (en) * | 2003-05-05 | 2004-10-21 | Ind Tech Res Inst | Fabrication and structure of carbon nanotube-gate transistor |
US7030430B2 (en) * | 2003-08-15 | 2006-04-18 | Intel Corporation | Transition metal alloys for use as a gate electrode and devices incorporating these alloys |
US20050095763A1 (en) * | 2003-10-29 | 2005-05-05 | Samavedam Srikanth B. | Method of forming an NMOS transistor and structure thereof |
US7064050B2 (en) | 2003-11-28 | 2006-06-20 | International Business Machines Corporation | Metal carbide gate structure and method of fabrication |
US7667277B2 (en) * | 2005-01-13 | 2010-02-23 | International Business Machines Corporation | TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks |
US7851915B2 (en) * | 2007-04-30 | 2010-12-14 | Stmicroelectronics S.A. | Electronic component comprising a titanium carbonitride (TiCN) barrier layer and process of making the same |
JP5375497B2 (ja) * | 2009-10-01 | 2013-12-25 | トヨタ自動車株式会社 | 半導体装置、及び、半導体装置の製造方法 |
KR101094375B1 (ko) * | 2009-11-30 | 2011-12-15 | 주식회사 하이닉스반도체 | 탄소함유 전극을 갖는 반도체 장치 및 그 제조 방법 |
KR101094386B1 (ko) * | 2009-11-30 | 2011-12-15 | 주식회사 하이닉스반도체 | 반도체 장치의 전극 및 캐패시터 제조 방법 |
WO2015068264A1 (ja) * | 2013-11-08 | 2015-05-14 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
CN107680938B (zh) * | 2016-08-01 | 2021-05-28 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置的制造方法 |
US11152207B2 (en) * | 2018-07-26 | 2021-10-19 | Tokyo Electron Limited | Method of forming titanium nitride films with (200) crystallographic texture |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0192646B1 (en) * | 1984-08-27 | 1989-11-29 | AT&T Corp. | Diffusion barrier layer for integrated-circuit devices |
JPH081950B2 (ja) * | 1986-11-21 | 1996-01-10 | 株式会社東芝 | 半導体装置の製造方法 |
JP2624736B2 (ja) * | 1988-01-14 | 1997-06-25 | 株式会社東芝 | 半導体装置の製造方法 |
JPH02296141A (ja) * | 1989-05-10 | 1990-12-06 | Terumo Corp | 機能性素子及びそれを備えたfetセンサ |
KR0126457B1 (ko) * | 1992-01-08 | 1997-12-26 | 기타오카 다카시 | 집적회로, 그 제조방법 및 그 박막형성장치 |
US5246881A (en) * | 1993-04-14 | 1993-09-21 | Micron Semiconductor, Inc. | Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of low bulk resistivity |
US5364803A (en) * | 1993-06-24 | 1994-11-15 | United Microelectronics Corporation | Method of preventing fluorine-induced gate oxide degradation in WSix polycide structure |
US5496762A (en) * | 1994-06-02 | 1996-03-05 | Micron Semiconductor, Inc. | Highly resistive structures for integrated circuits and method of manufacturing the same |
US5604140A (en) * | 1995-05-22 | 1997-02-18 | Lg Semicon, Co. Ltd. | Method for forming fine titanium nitride film and method for fabricating semiconductor element using the same |
-
1995
- 1995-03-30 KR KR1019950007050A patent/KR0147626B1/ko not_active IP Right Cessation
-
1996
- 1996-03-21 TW TW085103399A patent/TW284915B/zh active
- 1996-03-21 US US08/619,361 patent/US5795817A/en not_active Expired - Fee Related
- 1996-03-27 DE DE19612120A patent/DE19612120A1/de not_active Withdrawn
- 1996-03-29 GB GB9606719A patent/GB2299452B/en not_active Expired - Fee Related
- 1996-03-29 JP JP07654796A patent/JP3553725B2/ja not_active Expired - Fee Related
-
1997
- 1997-10-29 US US08/960,290 patent/US5965911A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5795817A (en) | 1998-08-18 |
KR0147626B1 (ko) | 1998-11-02 |
GB2299452B (en) | 1999-03-10 |
JPH08274334A (ja) | 1996-10-18 |
DE19612120A1 (de) | 1996-10-02 |
JP3553725B2 (ja) | 2004-08-11 |
GB9606719D0 (en) | 1996-06-05 |
US5965911A (en) | 1999-10-12 |
GB2299452A (en) | 1996-10-02 |
KR960035824A (ko) | 1996-10-28 |