KR970003426A - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR970003426A
KR970003426A KR1019950017128A KR19950017128A KR970003426A KR 970003426 A KR970003426 A KR 970003426A KR 1019950017128 A KR1019950017128 A KR 1019950017128A KR 19950017128 A KR19950017128 A KR 19950017128A KR 970003426 A KR970003426 A KR 970003426A
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South Korea
Prior art keywords
thin film
oxide film
forming
polycrystalline silicon
etching
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KR1019950017128A
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English (en)
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KR100228275B1 (ko
Inventor
정동수
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김광호
삼성전자 주식회사
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Priority to KR1019950017128A priority Critical patent/KR100228275B1/ko
Publication of KR970003426A publication Critical patent/KR970003426A/ko
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Publication of KR100228275B1 publication Critical patent/KR100228275B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4941—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

본 발명은 반도체 장치 및 제조 방법에 관한 것으로서, 더욱 상세하게는, 폴리사이드 구조 형성시 다결정 실리콘층의 증착 방법 변경을 통해 폴리실리콘층을 식각하는 공정에서 스페이서 폭을 개선하는 방법에 관한 것이다. 반도체 기판위에 게이트 산화막을 형성한 후에 고온에서 비정질형 박막을 감암 CVD 증착 방식으로 형성한 후에 TUBE나 RTP 장비를 이용하여 고온에서 어닐링을 시켜 비정질형 박막을 결정립이 큰 다결정 실리콘층으로 변화시켜 준다. 상기 상태에서 텅스텐 실리사이드를 증착하고 게이트 패턴을 형성하기 위해 식각을 하면 언더컷이 되지 않은 양호한 옆 면을 얻을 수 있다. 상기 상태에서 저온 산화막을 증착하고 건식 식각 방식으로 식각하면 원하는 스페이서 폭을 형성한 폴리사이드 구조를 얻을 수 있다.

Description

반도체 장치의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도(가) 내지 (다)는 종래 기술에 따른 반도체 장치 및 제조 방법의 단면도이며, 제2도(가) 내지 (다)는 본 발명의 실시예에 따른 반도체 장치의 제조 방법을 그 공정 순서에 따라 도시한 단면도이다.

Claims (4)

  1. 반도체 기판 위에 게이트 산화막 및 비정질 실리콘 박막을 형성하는 제1공정과, 상기 비정질 실리콘 박막을 결정립이 큰 다결정 실리콘층으로 변화시키는 제2공정, 상기 다결정 실리콘층 위에 텅스텐 실리사이드층을 형성한 제3공정, 상기 텅스텐 실리사이드층, 다결정 실리콘층 및 게이트 산화막을 식각하여 게이트 패턴을 형성하는 제4공정을 포함하는 반도체 장치의 제조 방법.
  2. 제1항에서, 상기 제1공정에서 감암 CVD로 520 ~ 580℃ 사이의 온도에서 비정질 실리콘 박막을 형성하는 반도체 장치의 제조 방법.
  3. 제1항에서, 상기 제2공정에서 질소 분위기에서 TUBE나 RTP 장비를 이용하여 900 ~ 1400℃ 온도에서 비정질 실리콘 박막을 어닐링하여 결정립이 큰 다결정 실리콘층으로 변화시키는 반도체 장치의 제조 방법.
  4. 제1항에서, 상기 제4공정 후 저온 산화막을 형성하고 건식 식각 방향으로 저온 산화막을 식각하여 스페이서를 형성하는 공정을 더 포함하는 반도체 장치의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950017128A 1995-06-23 1995-06-23 반도체 장치의 제조 방법 KR100228275B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950017128A KR100228275B1 (ko) 1995-06-23 1995-06-23 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950017128A KR100228275B1 (ko) 1995-06-23 1995-06-23 반도체 장치의 제조 방법

Publications (2)

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KR970003426A true KR970003426A (ko) 1997-01-28
KR100228275B1 KR100228275B1 (ko) 1999-11-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100504188B1 (ko) * 1997-12-30 2005-10-19 매그나칩 반도체 유한회사 반도체장치의 게이트전극 제조방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100881736B1 (ko) 2002-12-30 2009-02-06 주식회사 하이닉스반도체 반도체 소자의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100504188B1 (ko) * 1997-12-30 2005-10-19 매그나칩 반도체 유한회사 반도체장치의 게이트전극 제조방법

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