KR960002736B1 - 불휘발성 반도체 저장 장치 및 메모리 셀 검사 방법 - Google Patents

불휘발성 반도체 저장 장치 및 메모리 셀 검사 방법 Download PDF

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Publication number
KR960002736B1
KR960002736B1 KR1019920025603A KR920025603A KR960002736B1 KR 960002736 B1 KR960002736 B1 KR 960002736B1 KR 1019920025603 A KR1019920025603 A KR 1019920025603A KR 920025603 A KR920025603 A KR 920025603A KR 960002736 B1 KR960002736 B1 KR 960002736B1
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KR
South Korea
Prior art keywords
memory cell
memory cells
memory
voltage
electrically
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Expired - Fee Related
Application number
KR1019920025603A
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English (en)
Korean (ko)
Other versions
KR930014611A (ko
Inventor
기요까즈 하시모도
Original Assignee
닛본덴기 가부시끼가이샤
세끼모또 타다히로
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Publication of KR930014611A publication Critical patent/KR930014611A/ko
Application granted granted Critical
Publication of KR960002736B1 publication Critical patent/KR960002736B1/ko
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81—Threshold
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

Landscapes

  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR1019920025603A 1991-12-27 1992-12-26 불휘발성 반도체 저장 장치 및 메모리 셀 검사 방법 Expired - Fee Related KR960002736B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-359813 1991-12-27
JP03359813A JP3080743B2 (ja) 1991-12-27 1991-12-27 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
KR930014611A KR930014611A (ko) 1993-07-23
KR960002736B1 true KR960002736B1 (ko) 1996-02-26

Family

ID=18466426

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920025603A Expired - Fee Related KR960002736B1 (ko) 1991-12-27 1992-12-26 불휘발성 반도체 저장 장치 및 메모리 셀 검사 방법

Country Status (5)

Country Link
US (1) US5513193A (enExample)
EP (1) EP0548866B1 (enExample)
JP (1) JP3080743B2 (enExample)
KR (1) KR960002736B1 (enExample)
DE (1) DE69230750T2 (enExample)

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WO1995024057A2 (en) * 1994-03-03 1995-09-08 Rohm Corporation Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
FR2718559B1 (fr) * 1994-04-08 1996-06-07 Sgs Thomson Microelectronics Mémoire non volatile modifiable électriquement incorporant des fonctions de test.
EP0686979B1 (en) * 1994-06-10 2001-03-07 STMicroelectronics S.r.l. Failure tolerant memory device, in particular of the flash EEPROM type
JP2780674B2 (ja) * 1995-06-20 1998-07-30 日本電気株式会社 不揮発性半導体記憶装置
JPH0935500A (ja) * 1995-07-21 1997-02-07 Toshiba Corp 不揮発性半導体記憶装置のスクリーニング方法
US5610867A (en) * 1995-09-28 1997-03-11 International Business Machines Corporation DRAM signal margin test method
KR0161867B1 (ko) * 1995-10-11 1998-12-01 문정환 반도체 소자의 가변 문턱전압 조절회로
KR100223868B1 (ko) * 1996-07-12 1999-10-15 구본준 비휘발성 메모리를 프로그램하는 방법
US6268623B1 (en) * 1997-03-20 2001-07-31 Altera Corporation Apparatus and method for margin testing single polysilicon EEPROM cells
US6781883B1 (en) 1997-03-20 2004-08-24 Altera Corporation Apparatus and method for margin testing single polysilicon EEPROM cells
US6146943A (en) * 1997-07-09 2000-11-14 Hyundai Electronics Industries Co., Ltd. Method for fabricating nonvolatile memory device
US5912836A (en) * 1997-12-01 1999-06-15 Amic Technology, Inc. Circuit for detecting both charge gain and charge loss properties in a non-volatile memory array
US5991196A (en) * 1997-12-16 1999-11-23 Microchip Technology Incorporated Reprogrammable memory device with variable page size
JP3344313B2 (ja) * 1998-03-25 2002-11-11 日本電気株式会社 不揮発性半導体メモリ装置
KR100308192B1 (ko) 1999-07-28 2001-11-01 윤종용 플래시 메모리 셀들의 과소거를 방지할 수 있는 플래시 메모리장치 및 그것의 소거 방법
US7366020B2 (en) * 1999-07-28 2008-04-29 Samsung Electronics Co., Ltd. Flash memory device capable of preventing an overerase of flash memory cells and erase method thereof
US6914827B2 (en) * 1999-07-28 2005-07-05 Samsung Electronics Co., Ltd. Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof
KR100357693B1 (ko) 1999-12-06 2002-10-25 삼성전자 주식회사 향상된 소거 알고리즘이 내장된 불휘발성 반도체 메모리장치
KR20020091581A (ko) 2001-05-31 2002-12-06 삼성전자 주식회사 진행성 결함 특성을 갖는 메모리 셀을 검사할 수 있는플래시 메모리 장치
US7885119B2 (en) * 2006-07-20 2011-02-08 Sandisk Corporation Compensating for coupling during programming
US7894269B2 (en) * 2006-07-20 2011-02-22 Sandisk Corporation Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells
US7660166B2 (en) * 2007-01-31 2010-02-09 Sandisk Il Ltd. Method of improving programming precision in flash memory
US7652929B2 (en) * 2007-09-17 2010-01-26 Sandisk Corporation Non-volatile memory and method for biasing adjacent word line for verify during programming

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
JPS57176587A (en) * 1981-04-24 1982-10-29 Hitachi Ltd Semiconductor ram device
US4460982A (en) * 1982-05-20 1984-07-17 Intel Corporation Intelligent electrically programmable and electrically erasable ROM
JPS6258500A (ja) * 1985-09-09 1987-03-14 Fujitsu Ltd 半導体記憶装置の試験方法
JPS62114200A (ja) * 1985-11-13 1987-05-25 Mitsubishi Electric Corp 半導体メモリ装置
JPS6323297A (ja) * 1987-05-15 1988-01-30 Nec Corp 信号線駆動回路
JPS6476596A (en) * 1987-09-18 1989-03-22 Oki Electric Ind Co Ltd Error of eeprom detecting device
US4809231A (en) * 1987-11-12 1989-02-28 Motorola, Inc. Method and apparatus for post-packaging testing of one-time programmable memories
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory
US4841482A (en) * 1988-02-17 1989-06-20 Intel Corporation Leakage verification for flash EPROM
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5142495A (en) * 1989-03-10 1992-08-25 Intel Corporation Variable load for margin mode
JPH03156798A (ja) * 1989-08-18 1991-07-04 Hitachi Ltd 半導体不揮発性記憶装置
US5220533A (en) * 1991-11-06 1993-06-15 Altera Corporation Method and apparatus for preventing overerasure in a flash cell

Also Published As

Publication number Publication date
EP0548866A2 (en) 1993-06-30
DE69230750D1 (de) 2000-04-13
DE69230750T2 (de) 2000-10-05
EP0548866B1 (en) 2000-03-08
JPH05182499A (ja) 1993-07-23
JP3080743B2 (ja) 2000-08-28
US5513193A (en) 1996-04-30
EP0548866A3 (enExample) 1994-02-09
KR930014611A (ko) 1993-07-23

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