KR950034787A - 반도체 디바이스의 제조 방법 및 제조시에 사용된 에칭 용액 - Google Patents

반도체 디바이스의 제조 방법 및 제조시에 사용된 에칭 용액 Download PDF

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Publication number
KR950034787A
KR950034787A KR1019950003756A KR19950003756A KR950034787A KR 950034787 A KR950034787 A KR 950034787A KR 1019950003756 A KR1019950003756 A KR 1019950003756A KR 19950003756 A KR19950003756 A KR 19950003756A KR 950034787 A KR950034787 A KR 950034787A
Authority
KR
South Korea
Prior art keywords
insulating layer
conductive layer
layer
processing step
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019950003756A
Other languages
English (en)
Korean (ko)
Inventor
히데또 고또
미찌오 니시무라
마사유끼 모로이
Original Assignee
윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 이. 힐러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 이. 힐러
Publication of KR950034787A publication Critical patent/KR950034787A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
KR1019950003756A 1994-02-25 1995-02-25 반도체 디바이스의 제조 방법 및 제조시에 사용된 에칭 용액 Withdrawn KR950034787A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-52744 1994-02-25
JP05274494A JP3355504B2 (ja) 1994-02-25 1994-02-25 半導体装置の製造方法及びエッチング液

Publications (1)

Publication Number Publication Date
KR950034787A true KR950034787A (ko) 1995-12-28

Family

ID=12923438

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950003756A Withdrawn KR950034787A (ko) 1994-02-25 1995-02-25 반도체 디바이스의 제조 방법 및 제조시에 사용된 에칭 용액

Country Status (4)

Country Link
EP (1) EP0669646A1 (enExample)
JP (1) JP3355504B2 (enExample)
KR (1) KR950034787A (enExample)
TW (1) TW288168B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5847444A (en) * 1995-09-14 1998-12-08 Nec Corporation Semiconductor device with reduced aspect ratio contact hole
JP2977077B2 (ja) * 1996-08-16 1999-11-10 ユナイテッド マイクロエレクトロニクス コープ ツリー型コンデンサを備えた半導体メモリ素子
JP3210262B2 (ja) * 1996-08-16 2001-09-17 ユナイテッド マイクロエレクトロニクス コープ ツリー型コンデンサを備えた半導体メモリ素子の製造方法
JP3188843B2 (ja) * 1996-08-28 2001-07-16 ステラケミファ株式会社 微細加工表面処理剤及び微細加工表面処理方法
JP2000164586A (ja) * 1998-11-24 2000-06-16 Daikin Ind Ltd エッチング液
JP3903215B2 (ja) * 1998-11-24 2007-04-11 ダイキン工業株式会社 エッチング液
JP2001203334A (ja) * 1999-11-10 2001-07-27 Mitsubishi Electric Corp キャパシタを有する半導体装置およびその製造方法
CN1934233B (zh) 2003-10-28 2015-02-04 塞克姆公司 清洁溶液和蚀刻剂及其使用方法
KR100927080B1 (ko) * 2005-05-25 2009-11-13 다이킨 고교 가부시키가이샤 Ｂｐｓｇ막과 ｓｏｄ막을 포함하는 기판의 에칭액
CN111363551B (zh) * 2020-03-19 2021-11-30 常州星海电子股份有限公司 超大功率光阻玻璃芯片刻蚀用腐蚀液及腐蚀工艺

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4123228C2 (de) * 1991-07-12 1994-05-26 Siemens Ag Verfahren zur Dotierstoffkonzentrationsbestimmung mittels Ätzratenbestimmung in Borphosphorsilikatglasschichten für integrierte Halbleiter
US5180689A (en) * 1991-09-10 1993-01-19 Taiwan Semiconductor Manufacturing Company Tapered opening sidewall with multi-step etching process

Also Published As

Publication number Publication date
TW288168B (enExample) 1996-10-11
EP0669646A1 (en) 1995-08-30
JPH07240474A (ja) 1995-09-12
JP3355504B2 (ja) 2002-12-09

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