KR950034737A - 박막트랜지스터의 구조 및 제조방법 - Google Patents

박막트랜지스터의 구조 및 제조방법 Download PDF

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KR950034737A
KR950034737A KR1019940010409A KR19940010409A KR950034737A KR 950034737 A KR950034737 A KR 950034737A KR 1019940010409 A KR1019940010409 A KR 1019940010409A KR 19940010409 A KR19940010409 A KR 19940010409A KR 950034737 A KR950034737 A KR 950034737A
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gate electrode
thin film
gate
film transistor
semiconductor layer
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최종문
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문정환
금성일렉트론 주식회사
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 반도체 소자인 박막트랜지스터에 관한 것으로, 특히 SRAM의 메모리 셀(Memory Cell)에 적당하도록 한 박막트랜지스터의 구조 및 제조방법에 관한 것이다. 이와 같은 본 발명의 박막트랜지스터의 구조는 절연기판, 절연기판상에 형성되는 게이트전극, 상기 절연기판 및 게이트전극에 걸쳐 형성되는 게이트 절연막, 상기 게이트 절연막위에 형성되는 반도체층, 상기 게이트전극 상측과 졀연기판 상측의 반도체층에 선택적으로 형성되는 불순물확산영역과, 상기 게이트전극 양측 반도체층에 형성되는 채널영역을 포함하여 구성되고, 본 발명의 박막트랜지스터의 제조방법은 절연기판위에 게이트전극 및 캡게이트 절연막을 형성하는 공정과, 전면에 게이트 절연막과 반도체층을 차례로 형성하는 공정과, 게이트전극상측 및 절연기판상의 반도체층이 불순물 영역이 되고 게이트전극 측면이 채널영역이 되도록 불순물을 주입하는 공정으로 이루어진 것이다.

Description

박막트랜지스터의 구조 및 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명 제1실시예의 박막트랜지스터 공정단면도, 제4도는 본 발명 제1실시예의 박막트랜지스터 사시도, 제5도는 본 발명에 따른 이온주입농도 설명도.

Claims (10)

  1. 절연기판, 절연기판상에 형성되는 게이트전극, 상기 절연기판 및 게이트전극에 걸쳐 형성되는 게이트 절연막, 상기 게이트 절연막위에 형성되는 반도체응, 상기 게이트전극 상측과 졀연기판 상측의 반도체층에 선택적으로 형성되는 불순물확산영역과, 상기 게이트전극 양측 반도체층에 형성되는 채널영역을 포함하여 구성됨을 특징으로 하는 박막트랜지스터의 구조.
  2. 제1항에 있어서, 게이트전극과 게이트 절연막 사이에 캡 게이트 절연막이 더 형성됨을 특징으로 하는 박막트랜지스터의 구조.
  3. 제2항에 있어서, 캡 게이트 절연막의 두께에 상응하도록 채널영역에서 불순물확산영역과 게이트전극이 옵셋됨을 특징으로 하는 박막트랜지스터의 구조.
  4. 절연기판위에 게이트전극을 형성하는 공정과, 전면에 게이트 절연막과 반도체층을 차례로 형성하는 공정과, 게이트전극 상측 및 절연기판상이ㅡ 반도체층이 선택적으로 불순물 확산영역이 되고 게이트전극 측면의 반도체층이 채널영역이 되도록 불순물을 주입하는 공정을 포함하여 이루어짐을 특징으로 하는 박막트랜지스터의 제조방법.
  5. 제4항에 있어서, 게이트 전극 형성시 게이트전극 상에 캡 게이트 절연막을 더 형성함을 특징으로 하는 박막트랜지스터의 제조방법.
  6. 제4항 또는 제5항에 있어서, 불순물 이온주입은 p채널 트랜지스터인 경우 p형 불순물 이온을 5keV∼20keV 에너지로 1×1014∼1×1016atoms/㎠의 농도로 이온주입 함을 특징으로 하는 박막트랜지스터 제조방법.
  7. 제4항 또는 제5항에 있어서, 불순물 이온주입은 n채널 트랜지스터인 경우 n형 불순물 이온을 10keV∼50keV 에너지로 1×1014∼1×1016atoms/㎠의 농도만큼 주입 함을 특징으로 하는 박막트랜지스터 제조방법.
  8. 제4항 또는 제5항에 있어서, 반도체층은 폴리실리콘을 사용함을 특징으로 하는 박막트랜지스터 제조방법.
  9. 제4항 또는 제5항에 있어서, 반도체층의 두께는 200∼500A으로 형성함을 특징으로 하는 박막트랜지스터 제조방법.
  10. 제5항에 있어서, 캡게이트 절연막의 두께는 게이트전극과 불순물 확산영역간의 오셋되는 길이에 따라 결정됨을 특징으로 하는 박막트랜지스터 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940010409A 1994-05-12 1994-05-12 박막트랜지스터의 구조 및 제조방법 KR0166797B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019940010409A KR0166797B1 (ko) 1994-05-12 1994-05-12 박막트랜지스터의 구조 및 제조방법
DE4424727A DE4424727A1 (de) 1994-05-12 1994-07-13 Dünnfilmtransistor und Verfahren zu seiner Herstellung
JP6295998A JPH07307476A (ja) 1994-05-12 1994-11-07 薄膜トランジスタの構造及びその製造方法

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KR1019940010409A KR0166797B1 (ko) 1994-05-12 1994-05-12 박막트랜지스터의 구조 및 제조방법

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KR0166797B1 KR0166797B1 (ko) 1999-01-15

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JPS58105574A (ja) * 1981-12-17 1983-06-23 Seiko Epson Corp 液晶表示装置
JPH04348078A (ja) * 1990-06-25 1992-12-03 Nippon Steel Corp Ｍｏｓ型半導体装置
JPH04109630A (ja) * 1990-08-29 1992-04-10 Nippon Steel Corp Ｍｏｓ型半導体装置の製造方法
JP2602132B2 (ja) * 1991-08-09 1997-04-23 三菱電機株式会社 薄膜電界効果素子およびその製造方法
JP2855973B2 (ja) * 1992-07-02 1999-02-10 日本電気株式会社 Ｍｏｓ型薄膜トランジスタ

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KR0166797B1 (ko) 1999-01-15
JPH07307476A (ja) 1995-11-21

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