KR950021004A - 열처리장치 - Google Patents

열처리장치 Download PDF

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Publication number
KR950021004A
KR950021004A KR1019940033374A KR19940033374A KR950021004A KR 950021004 A KR950021004 A KR 950021004A KR 1019940033374 A KR1019940033374 A KR 1019940033374A KR 19940033374 A KR19940033374 A KR 19940033374A KR 950021004 A KR950021004 A KR 950021004A
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heat treatment
filter
treatment apparatus
processed
circulation
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KR1019940033374A
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KR100269413B1 (ko
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다카시 다나하시
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이노우에 아키라
도오교오 에레구토론 가부시끼 가이샤
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Priority claimed from JP34142593A external-priority patent/JP3402713B2/ja
Priority claimed from JP6037889A external-priority patent/JPH07226382A/ja
Application filed by 이노우에 아키라, 도오교오 에레구토론 가부시끼 가이샤 filed Critical 이노우에 아키라
Publication of KR950021004A publication Critical patent/KR950021004A/ko
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Publication of KR100269413B1 publication Critical patent/KR100269413B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/14—Wafer cassette transporting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

열처리로의 아래편쪽의 옮겨싣기실 내에 기류를 형성하도록 송풍팬 및 셔터가 배치된 순환덕트부를 설치하고, 그 취출구에 제진필터부를 배설한다. 또 이 필터부의 전방쪽에 다수의 취출구가 형성된 예컨대, 3개의 공기공급관을 소정의 높이 위치에 설치하고, 이들 기단쪽에 개폐밸브를 개재하여 청정기체 공급원을 접속한다. 웨이퍼의 언로드 개시후, 웨이퍼 보오트로부터 웨이퍼를 떼내는 동안은 청정기체 공급원으로부터 청정기체를 옮겨싣기실 내에 공급하고, 순환덕트부 내에서의 기류의 순환을 정지해 둔다, 또 제진피터부의 필터재에 PTFE를 사용한다. 이로써 제진 필터로부터 비산하는 불순물이 웨이퍼에주는 악영향을 저감할 수 있다.

Description

열처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 제1도에 나타낸 본 발명의 제1 실시예의 열처리장치의 변형예의 종단면도.

Claims (8)

  1. 피처리체를 피처리체 유지구에 유지하여 옮겨싣기실로부터 반응관 내에 반입하여 열처리하고, 열처리후 반출하고, 또한 옮겨싣기실에 개구하는 흡입구와, 옮겨싣기실의 양쪽벽과 바닥면의 아래편쪽에는 제진 필터부를 갖춘 순환용 통기로가 설치되고, 이 순환용 통기로를 통하여 옮겨싣기실 내의 기체를 순환시키는 열처리장치에 있어서, 청정기체의 공급원과, 이 공급원으로 부터 공급되는 청정기체를 상기 제진필터부를 통과하지 않고, 상기 옮겨싣기실 내에 공급하는 공급로와, 이 공급로에 설치된 개폐밸브와, 이 개폐밸브를 염과 동시에, 상기 순환용 통기로의 통기를 정지하는 제1의 모드와 상기 개폐별브를 닫음과 동시에, 상기 순환용 통기로의 통기를 하는 제2의 모드와의 사이에 통기모드의 전환을 하는 제어부와를 갖춘 열처리장치.
  2. 제1항에 있어서, 상기 공급로가 상기 제진필터부의 폭방향을 따라서 수평으로 배관된 복수의 공기공급관으로 이루어지고, 이 공기공급관에는 관로를 따라서, 다수의 공기취출구가 형성되어 있는 열처리장치.
  3. 피처리체를 피처리체 유지구에 유지시켜서 옮겨싣기실로부터 반응관내에 반입하여 열처리하고, 열처리후 반출하고, 또한 옮겨싣기실에 개구하는 흡입구와 옮겨싣기실의 양쪽벽과 바닥면의 아래편쪽에는 제진필터부를 갖춘 순환용 통기로가 설치되고, 이 순환용 통기로를 통하여 옮겨싣기실 내의 기체를 순환시키는 열처리장치에 있어서, 적어도 상기 반응관으로부터 상기 피처리체 유지구를 반출한 후, 상기 피처리체 유지구로부터 피처리체를 꺼낼 때까지의 사이, 상기 순환용 통기로의 통기를 정지하는 제어부를 갖춘 열처리장치.
  4. 피처리체를 가열하여 소정의 열처리를 하는 열처리로와, 이 열처리로를 수납하는 케이싱과, 이 케이싱 내에 공기류를 형성하는 송풍수단과, 상기 공기류를 비롯하여 장치의 청정환경을 얻기 위한 필터장치를 갖춘 열처리장치에 있어서, 상기 필터장치의 여과재에 PTFE(폴리·테트라·플루오로·에틸렌)를 사용한 열처리장치.
  5. 피처리체를 그 내부에서 열처리하는 반응용기를 가지며, 또한 피처리체를 유지하는 피처리체 유지구를 상기 반응용기 내에 반입하고, 반출하는 로드·언로드장치와 피처리체 수납용기와 상기 로드·언로드장치에 지지된 상기 피처리체 유지구와의 사이에서 피처리체를 반송하는 반송장치가 상기 반응용기의 아래편에 설치된 케이싱 내에 설치되고, 또한 이 케이싱 내의 한 측면으로부터 대향하는 다른 측면을 향하여 필터장치에 의하여 청정화하는 공기류가 형성되는 열처리장치에 있어서, 상기 필터장치의 여과재에 PTFE(폴리ㆍ테트라ㆍ플루오로ㆍ에틸렌)를 사용하여 틀체에 의하여 지지한 열처리장치.
  6. 제4항 또는 제5항에 있어서, 상기 여과재를 지지하는 상기 틀체와상기 여과재와 고정수단에 방출가스가 적은 수지를 사용한 열처리장치.
  7. 제4항 또는 제5항에 있어서, 상기 여과재가 방출가스가 적은 수지로 된 스페이서에 의하여 유지되고 있는 열처리장치.
  8. 제4항 또는 제5항에 있어서, 상기 필터장치의 상류쪽에 활성탄 필터를 배치한 열처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940033374A 1993-12-10 1994-12-09 열처리장치 KR100269413B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP93-341425 1993-12-10
JP34142593A JP3402713B2 (ja) 1993-12-10 1993-12-10 熱処理装置
JP6037889A JPH07226382A (ja) 1994-02-10 1994-02-10 熱処理装置
JP94-37889 1994-02-10

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KR950021004A true KR950021004A (ko) 1995-07-26
KR100269413B1 KR100269413B1 (ko) 2000-11-01

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US (1) US5551984A (ko)
KR (1) KR100269413B1 (ko)
TW (1) TW273574B (ko)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08186081A (ja) 1994-12-29 1996-07-16 F T L:Kk 半導体装置の製造方法及び半導体装置の製造装置
JPH0945597A (ja) * 1995-05-25 1997-02-14 Kokusai Electric Co Ltd 半導体製造装置及びロードロック室酸素濃度の制御方法及び自然酸化膜の生成方法
JPH0969557A (ja) * 1995-08-30 1997-03-11 Shin Etsu Handotai Co Ltd ウエーハの保管／輸送方法
KR100219406B1 (ko) * 1996-04-04 1999-09-01 윤종용 화학기상증착설비의 웨이퍼로딩실 공기흐름 안내장치
JP3155487B2 (ja) * 1997-02-12 2001-04-09 株式会社日立国際電気 ウェット酸化装置およびウェット酸化方法
JP3425592B2 (ja) * 1997-08-12 2003-07-14 東京エレクトロン株式会社 処理装置
JPH11251207A (ja) * 1998-03-03 1999-09-17 Canon Inc Ｓｏｉ基板及びその製造方法並びにその製造設備
US6309438B1 (en) * 1998-11-16 2001-10-30 Mine Safety Appliances Company Filter unit and dust-proof mask therewith
US8273146B1 (en) * 1999-09-29 2012-09-25 Shin-Etsu Handotai Co., Ltd. Wafer and epitaxial wafer, and manufacturing processes therefor
JP3998386B2 (ja) * 2000-01-26 2007-10-24 三菱電機株式会社 液晶表示装置の製造装置および液晶表示装置の製造方法
JP4100466B2 (ja) * 2000-12-25 2008-06-11 東京エレクトロン株式会社 液処理装置
TWI221645B (en) 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US7115453B2 (en) 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2002231627A (ja) 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7141822B2 (en) 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4993810B2 (ja) * 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4718700B2 (ja) 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7118780B2 (en) * 2001-03-16 2006-10-10 Semiconductor Energy Laboratory Co., Ltd. Heat treatment method
US7052943B2 (en) * 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6812081B2 (en) 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
JP3990881B2 (ja) * 2001-07-23 2007-10-17 株式会社日立製作所 半導体製造装置及びそのクリーニング方法
US7374976B2 (en) 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
US20050098107A1 (en) * 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
KR100706790B1 (ko) * 2005-12-01 2007-04-12 삼성전자주식회사 산화 처리 장치 및 방법
US8082878B2 (en) * 2006-04-20 2011-12-27 Saint-Gobain Glass France Thermal evaporation apparatus, use and method of depositing a material
DE202009016200U1 (de) 2009-11-30 2010-03-04 BSH Bosch und Siemens Hausgeräte GmbH Filterelement für Dunstabzugshaube und Dunstabzugshaube
JP5796972B2 (ja) * 2010-06-14 2015-10-21 株式会社日立国際電気 基板処理装置
JP6082283B2 (ja) * 2012-05-30 2017-02-15 東京エレクトロン株式会社 筐体及びこれを含む基板処理装置
KR101376739B1 (ko) 2012-06-22 2014-03-26 (주) 예스티 청정도가 향상된 가압 열처리장치
CN111696895A (zh) 2014-11-25 2020-09-22 应用材料公司 具有基板载体和净化腔室环境控制的基板处理系统、设备和方法
WO2016117588A1 (ja) 2015-01-21 2016-07-28 株式会社日立国際電気 基板処理装置
KR101720620B1 (ko) * 2015-04-21 2017-03-28 주식회사 유진테크 기판처리장치 및 챔버 세정방법
KR102453149B1 (ko) * 2015-07-09 2022-10-12 삼성전자주식회사 퍼니스형 반도체 장치, 이의 세정 방법 및 이를 이용한 박막 형성 방법
JP6441244B2 (ja) * 2016-02-02 2018-12-19 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置
KR102127583B1 (ko) * 2016-03-24 2020-06-26 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
US11694907B2 (en) * 2016-08-04 2023-07-04 Kokusai Electric Corporation Substrate processing apparatus, recording medium, and fluid circulation mechanism
CN111074237A (zh) * 2018-10-18 2020-04-28 君泰创新（北京）科技有限公司 源瓶
KR102388390B1 (ko) * 2020-01-06 2022-04-21 세메스 주식회사 로드 포트 유닛, 이를 포함하는 저장 장치 및 배기 방법
JP2022075362A (ja) * 2020-11-06 2022-05-18 東京エレクトロン株式会社 熱処理装置及びダミー基板の処理方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3342816C2 (de) * 1983-11-24 1986-12-18 Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, 1000 Berlin Verfahren zur Entfernung von Schadstoffen aus Prozeßabgasen
US4894071A (en) * 1988-09-27 1990-01-16 Tech Paper, Inc. Portable air cleaner
US5254170A (en) * 1989-08-07 1993-10-19 Asm Vt, Inc. Enhanced vertical thermal reactor system
US5221201A (en) * 1990-07-27 1993-06-22 Tokyo Electron Sagami Limited Vertical heat treatment apparatus
US5219464A (en) * 1990-10-09 1993-06-15 Tokyo Electron Limited Clean air apparatus
US5261935A (en) * 1990-09-26 1993-11-16 Tokyo Electron Sagami Limited Clean air apparatus
US5181819A (en) * 1990-10-09 1993-01-26 Tokyo Electron Sagami Limited Apparatus for processing semiconductors
US5261167A (en) * 1990-09-27 1993-11-16 Tokyo Electron Sagami Limited Vertical heat treating apparatus
JP2525284B2 (ja) * 1990-10-22 1996-08-14 ティーディーケイ株式会社 クリ―ン搬送方法及び装置
JPH04196523A (ja) * 1990-11-28 1992-07-16 Tokyo Electron Sagami Ltd 熱処理装置
US5320733A (en) * 1990-12-21 1994-06-14 Ultrakust Electronic Gmbh Sensor system
JP3108460B2 (ja) * 1991-02-26 2000-11-13 東京エレクトロン株式会社 縦型熱処理装置
JP3108459B2 (ja) * 1991-02-26 2000-11-13 東京エレクトロン株式会社 縦型熱処理装置
US5277579A (en) * 1991-03-15 1994-01-11 Tokyo Electron Sagami Limited Wafers transferring method in vertical type heat treatment apparatus and the vertical type heat treatment apparatus provided with a wafers transferring system
US5271732A (en) * 1991-04-03 1993-12-21 Tokyo Electron Sagami Kabushiki Kaisha Heat-treating apparatus
JP3181308B2 (ja) * 1991-04-03 2001-07-03 東京エレクトロン株式会社 熱処理装置
US5303671A (en) * 1992-02-07 1994-04-19 Tokyo Electron Limited System for continuously washing and film-forming a semiconductor wafer
JPH05218176A (ja) * 1992-02-07 1993-08-27 Tokyo Electron Tohoku Kk 熱処理方法及び被処理体の移載方法
JP3186262B2 (ja) * 1992-10-14 2001-07-11 ソニー株式会社 半導体装置の製造方法
JP3330166B2 (ja) * 1992-12-04 2002-09-30 東京エレクトロン株式会社 処理装置
JP3334929B2 (ja) * 1993-02-04 2002-10-15 東京エレクトロン株式会社 熱処理装置
JP3218488B2 (ja) * 1993-03-16 2001-10-15 東京エレクトロン株式会社 処理装置
US5464475A (en) * 1994-05-20 1995-11-07 Advanced Micro Devices, Inc. Work-in-process storage pod

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