KR940022677A - 처리장치 - Google Patents

처리장치 Download PDF

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Publication number
KR940022677A
KR940022677A KR1019940004660A KR19940004660A KR940022677A KR 940022677 A KR940022677 A KR 940022677A KR 1019940004660 A KR1019940004660 A KR 1019940004660A KR 19940004660 A KR19940004660 A KR 19940004660A KR 940022677 A KR940022677 A KR 940022677A
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South Korea
Prior art keywords
gas
natural oxide
oxide film
processing
suppressor
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KR1019940004660A
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English (en)
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KR100307997B1 (ko
Inventor
하루노리 우시카와
겐지 다고
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이노우에 아키라
도오교오 에레구토론 가부시끼 가이샤
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Application filed by 이노우에 아키라, 도오교오 에레구토론 가부시끼 가이샤 filed Critical 이노우에 아키라
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y10S414/138—Wafers positioned vertically within cassette
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/14—Wafer cassette transporting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

본 발명은, 종형 열처리 장치와 같은 피처리체의 처리장치에 관한 것으로, 피처리체를 처리하는 처리용기의 아래쪽에 대기공간을 설치하고, 이 대기공간에 피처리체를 여러 장 재치하여 승강이 자유로운 피처리체 재치대(보트)를 배치하며, 대기공간에 피처리체의 표면에 형성되는 자연산화막을 억제하기 위한 자연산화막 억제기체를 공급하는 자연산화막 억제기체 공급장치를 설치하며, 이 기체 공급자치에 의하여 낮은 노점온도를 가지는 건조기체를 억제기체로서 공급하는 처리장치이다. 이에 따라, 저코스트이면서 효율좋게 자연산화막의 형성을 억제할 수 있다.

Description

처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 처리장치를 종형 열처리 장치에 사용한 실시예의 종단 단면도.
제2도는 제1도에 나타낸 종형 열처리 장치의 II-II선의 단면도.

Claims (9)

  1. 피처리체를 처리하는 처리용기(6)와, 상기 피처리체(W)를 재치하여 상기 처리용(6)내에 그 아래쪽으로부터 승강이 자유롭게 설치되는 피처리체 재치대와, 이 피처리체 재치대를 대기시키기 위하여 상기 처리용기 아래쪽에 설치된 대기공간(26)과, 이 대기공간(26)에 피처리체(W)에 형성되는 자연산화막을 억제하기 위한 자연산화막 억제기체(A)를 공급하기 위한 자연산화막 억제기체 공급장치(52)로 구성되며, 상기 자연산화막 억제기체(A)가 낮은 노점온도를 가지는 건조기체인 처리장치.
  2. 제1항에 있어서, 상기 자연산화막 억제기체(A)가, -60℃이하, 바람직하게는 -70℃이하의 노점온도를 가지는 건조공기인 처리장치.
  3. 제1항에 있어서, 상기 자연산화막 억제기체 공급장치(52)가, 건조공기를 분사하는 분사노즐(56)을 가지는 처리장치.
  4. 제1항에 있어서, 상기 자연산화막 억제기체 공급장치(52)가, 청정공기를 도입하는 블로어(58)와, 이 청정공기를 건조시키는 건조기(64)와, 유량제어밸브와, 기체분사 노즐(56)로 구성되며, 이들이 기체공급관(60)에 의하여 서로 연결되어 있는 처리장치.
  5. 제1항에 있어서, 상기 대기공간(26)의 하부와 측부에 격벽을 통하여 서로 구획된 순환통로를 가지며, 하부의 순환통로에는 기체분사 노즐(56)을 가지는 상기 자연산화막 억제기체 공급장치(52)가 설치되어 구성되는 처리장치.
  6. 제5항에 있어서, 상기 순환통로중, 사기 대기공간(26)의 기체유입측의 상기 순환통로에는 다수 개의 통기구멍을 가지는 구획벽(38A),(38B),(38C)과 퍼티클을 흡착제거하는 필터가 설치되어 있는 처리장치.
  7. 제1항에 있어서, 상기 대기공간(26)의 앞부 측면에 상자형상의 트랜스터 박스(32)가 설치됨과 동시에, 이 트랜스퍼 박스(32)에 기체도입관(34)과 기체배기관(36)이 접속되어 이 트랜스퍼 박스(32) 내에 건조 공기를 공급하며, 또 진공배기하도록 한 처리장치.
  8. 제1항에 있어서, 상기 자연산화막 억제기체(A)로서, 건조공기에 불활성 가스를 혼입시킨 것을 사용하는 처리장치.
  9. 제1항에 있어서, 상기 처리장치가 종형 열처리 장치인 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940004660A 1993-03-10 1994-03-10 처리 장치 KR100307997B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP05076174A JP3120395B2 (ja) 1993-03-10 1993-03-10 処理装置
JP93-76174 1993-03-10

Publications (2)

Publication Number Publication Date
KR940022677A true KR940022677A (ko) 1994-10-21
KR100307997B1 KR100307997B1 (ko) 2001-11-30

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ID=13597739

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KR1019940004660A KR100307997B1 (ko) 1993-03-10 1994-03-10 처리 장치

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US (1) US5536320A (ko)
JP (1) JP3120395B2 (ko)
KR (1) KR100307997B1 (ko)

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JP3495788B2 (ja) * 1994-07-05 2004-02-09 東京エレクトロン株式会社 熱処理方法
JP3982844B2 (ja) * 1995-01-12 2007-09-26 株式会社日立国際電気 半導体製造装置及び半導体の製造方法
KR100219406B1 (ko) * 1996-04-04 1999-09-01 윤종용 화학기상증착설비의 웨이퍼로딩실 공기흐름 안내장치
US5879458A (en) 1996-09-13 1999-03-09 Semifab Incorporated Molecular contamination control system
JP4578615B2 (ja) 1999-07-21 2010-11-10 東京エレクトロン株式会社 熱処理装置
DE19947781C1 (de) * 1999-10-02 2000-12-21 Bosch Gmbh Robert Verfahren und Vorrichtung zur Luftführung in einem Bearbeitungsraum
US6662225B1 (en) * 1999-11-16 2003-12-09 Ricoh Company, Ltd. Remote system usage monitoring with flexible packaging of data
JP3998386B2 (ja) * 2000-01-26 2007-10-24 三菱電機株式会社 液晶表示装置の製造装置および液晶表示装置の製造方法
KR20020019414A (ko) * 2000-09-05 2002-03-12 엔도 마코토 기판 처리 장치 및 기판 처리 장치를 이용한 반도체디바이스 제조 방법
US7181993B2 (en) * 2001-02-06 2007-02-27 Good Earth Tool Company Apparatus and process for cutting of extruded material
JP2003124284A (ja) * 2001-10-11 2003-04-25 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
KR20050057144A (ko) 2002-09-20 2005-06-16 동경 엘렉트론 주식회사 건조공기 공급장치 및 처리장치
KR100486690B1 (ko) * 2002-11-29 2005-05-03 삼성전자주식회사 기판 이송 모듈의 오염을 제어할 수 있는 기판 처리 장치및 방법
DE20321795U1 (de) * 2003-12-11 2010-03-04 Voith Patent Gmbh Vorrichtung zum Reinigen wenigsten einer Prozesskammer zum Beschichten wenigstens eines Substrats
JP4358077B2 (ja) * 2004-09-21 2009-11-04 株式会社東芝 成膜装置及び成膜方法
JP2006216710A (ja) * 2005-02-02 2006-08-17 Hitachi High-Technologies Corp 半導体製造装置
US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
WO2006127472A1 (en) * 2005-05-20 2006-11-30 Cardinal Cg Company Deposition chamber desiccation systems and methods of use thereof
US7867403B2 (en) * 2006-06-05 2011-01-11 Jason Plumhoff Temperature control method for photolithographic substrate
JP5562759B2 (ja) * 2009-11-04 2014-07-30 東京エレクトロン株式会社 基板処理装置
KR20110112074A (ko) * 2010-04-06 2011-10-12 삼성전자주식회사 기판 처리 장치 및 방법
JP6082283B2 (ja) * 2012-05-30 2017-02-15 東京エレクトロン株式会社 筐体及びこれを含む基板処理装置
JP6441244B2 (ja) * 2016-02-02 2018-12-19 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置
JP7234527B2 (ja) * 2018-07-30 2023-03-08 Tdk株式会社 センサー内蔵フィルタ構造体及びウエハ収容容器

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KR0167476B1 (ko) * 1990-09-27 1999-02-01 이노우에 다케시 종형 열처리 장치

Also Published As

Publication number Publication date
JPH06267933A (ja) 1994-09-22
JP3120395B2 (ja) 2000-12-25
US5536320A (en) 1996-07-16
KR100307997B1 (ko) 2001-11-30

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