KR930020667A - 센스 앰프회로 - Google Patents

센스 앰프회로 Download PDF

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Publication number
KR930020667A
KR930020667A KR1019930004874A KR930004874A KR930020667A KR 930020667 A KR930020667 A KR 930020667A KR 1019930004874 A KR1019930004874 A KR 1019930004874A KR 930004874 A KR930004874 A KR 930004874A KR 930020667 A KR930020667 A KR 930020667A
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KR
South Korea
Prior art keywords
sense amplifier
amplifier circuit
gate
region
mos transistors
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KR1019930004874A
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English (en)
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KR0137355B1 (ko
Inventor
마사시 아가타
히로유키 야마우치
토시오 야마다
Original Assignee
모리시타 요이찌
마쯔시다덴기산교 가부시기가이샤
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Publication of KR930020667A publication Critical patent/KR930020667A/ko
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Publication of KR0137355B1 publication Critical patent/KR0137355B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 MOS형 반도체 질적회로에 있어서 복수개의 센스 앰프회로를 동일개소에 제작하는 경우에 사용되는 센스앰프 회로의 레이아우트에 관한 것이며, 그 구성에 있어서, 동일한 활성화영역상에 제1방향에 대해서 동일한 대략 U자형 또는 대략 O자형상으로 반대방향으로 형성되어있는 게이트전극을 가진 MOS 트랜지스터쌍으로 구성되어 있는 센스앰프회로가 복수개, 제1방향에 대해서 수직인 제2방향으로 상기 활성화영역과 동일한 활성화역영상에 형성되고, 상기 복수개의 MOS트랜지스터의 대해서 공통인 소스의 확산층 영역상에 형성되는 소스의 확산층과 금속 배선과의 접점이, 상기 센스앱프회로를 구성하는 MOS트랜지스터쌍의 게이트전극의 중간에 형성되어 있는 구성으로 한 것으로 특징으로 하며, 이로써, 접촉저항들의 프로세스상의 불균일에 대한 회로의 오동작을 억제하고, 또 소스의 확산층영역을 축소시켜 센스 앰프회로의 레이아우트면적을 축소시킬 수 있다.

Description

센스 앰프회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 있어서의 센스 앰프회로의 마스크도이다.
제2도는 제2실시예에 있어서의 센스 앰프회로의 마스크도이다.
제3도는 제3실시예에 있어서의 센스 앰프회로의 마스크도이다.

Claims (4)

  1. 동일한 활성화영역상에 제1방향에 대해서 동일한 대략 U자형상으로 반대 방향으로 형성되어 있는 게이트전극을 가진 MOS트랜지스터 쌍으로 구성되어 있는 센스앰프회로가 복수개, 상기 제1방향에 대해서 수직인 제2방향으로 상기 활성화영역과 동일한 활성화영역상에 형성되고, 상기 복수개의 MOS트랜지스터에 대해서 공통인 소스의 확산층영역상에 형성되는 소스의 확산층과 금속배선과의 접점이, 상기 센스앰프회로를 구성하는 MOS트랜지스터쌍의 게이트전극의 중간에 형성되어 이루어진 것을 특징으로 하는 센스앰프회로.
  2. 동일한 활성화영역상에 제1방향에 대해서 동일한 대략 0자형상으로 반대 방향으로 형성되어 있는 게이트전극을 가진 MOS 트랜지스터쌍으로 구성되어 있는 센스앰프회로가 복수개, 상기 제1방향에 대해서 수직인 제2방향으로 상기 활성화영역과 동일한 활성화영역상에 형성되고, 상기 복수개의 MOS 트랜지스터에 대해서 공통인 소스의 확산층 영역상에 형성되는 소스의 확산층과 금속배선과의 접점이, 상기 센스앰프 회로를 구성하는 MOS 트랜지스터쌍의 게이트전극의 중간에 형성되어 이루어진 것을 특징으로 하는 센스앰프 회로.
  3. 동일한 활성화 영역상에 제1방향에 대해서 동일한 대략 U자형상으로 반대방향으로 형성되어 있는 게이트전극을 가진 MOS 트랜지스터쌍으로 구성되어 있는 센스앰프회로의 게이트전극의 형상에 있어서, 상기 제1방향으로 게이트길이가 형성되어 있는 게이트부분의 게이트길이가, 제1방향에 대해서 수직인 제2방향으로 게이트길이가 형성되어 있는 게이트부분의 길이보다도 큰 것을 특징으로 하는 센스앰프회로.
  4. 제2항에 있어서, 대략 0자형상의 게이트전극의 일단부가 활성화영역과 절연층영역의 경계상에 형성되어 이루어진 것을 특징으로 하는 센스앰프 회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930004874A 1992-03-27 1993-03-27 센스앰프회로 KR0137355B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP92-70755 1992-03-27
JP7075592 1992-03-27

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KR930020667A true KR930020667A (ko) 1993-10-20
KR0137355B1 KR0137355B1 (ko) 1998-04-24

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US (1) US5389810A (ko)
EP (1) EP0562600B1 (ko)
KR (1) KR0137355B1 (ko)
DE (1) DE69314980T2 (ko)

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CN109155310B (zh) 2016-08-31 2023-03-31 美光科技公司 存储器单元及存储器阵列
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Publication number Publication date
KR0137355B1 (ko) 1998-04-24
EP0562600A3 (en) 1993-11-24
EP0562600A2 (en) 1993-09-29
DE69314980T2 (de) 1998-02-26
DE69314980D1 (de) 1997-12-11
US5389810A (en) 1995-02-14
EP0562600B1 (en) 1997-11-05

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