KR930014852A - 반도체 집적 회로 장치의 제조 방법, 그것에 사용되는 성형장치 및 성형 재료 - Google Patents
반도체 집적 회로 장치의 제조 방법, 그것에 사용되는 성형장치 및 성형 재료 Download PDFInfo
- Publication number
- KR930014852A KR930014852A KR1019920025180A KR920025180A KR930014852A KR 930014852 A KR930014852 A KR 930014852A KR 1019920025180 A KR1019920025180 A KR 1019920025180A KR 920025180 A KR920025180 A KR 920025180A KR 930014852 A KR930014852 A KR 930014852A
- Authority
- KR
- South Korea
- Prior art keywords
- molding material
- cavity
- integrated circuit
- circuit device
- molding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49121—Beam lead frame or beam lead device
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3357062A JP3059560B2 (ja) | 1991-12-25 | 1991-12-25 | 半導体装置の製造方法およびそれに使用される成形材料 |
| JP91-357062 | 1991-12-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR930014852A true KR930014852A (ko) | 1993-07-23 |
Family
ID=18452192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920025180A Withdrawn KR930014852A (ko) | 1991-12-25 | 1992-12-23 | 반도체 집적 회로 장치의 제조 방법, 그것에 사용되는 성형장치 및 성형 재료 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5304512A (enExample) |
| JP (1) | JP3059560B2 (enExample) |
| KR (1) | KR930014852A (enExample) |
| TW (1) | TW226483B (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3057130B2 (ja) | 1993-02-18 | 2000-06-26 | 三菱電機株式会社 | 樹脂封止型半導体パッケージおよびその製造方法 |
| JP2994171B2 (ja) * | 1993-05-11 | 1999-12-27 | 株式会社東芝 | 半導体装置の製造方法および封止用部材の製造方法 |
| US6232152B1 (en) | 1994-05-19 | 2001-05-15 | Tessera, Inc. | Method of manufacturing a plurality of semiconductor packages and the resulting semiconductor package structures |
| US5776796A (en) * | 1994-05-19 | 1998-07-07 | Tessera, Inc. | Method of encapsulating a semiconductor package |
| US5663106A (en) * | 1994-05-19 | 1997-09-02 | Tessera, Inc. | Method of encapsulating die and chip carrier |
| US5834339A (en) | 1996-03-07 | 1998-11-10 | Tessera, Inc. | Methods for providing void-free layers for semiconductor assemblies |
| US6359335B1 (en) | 1994-05-19 | 2002-03-19 | Tessera, Inc. | Method of manufacturing a plurality of semiconductor packages and the resulting semiconductor package structures |
| JP2994219B2 (ja) | 1994-05-24 | 1999-12-27 | シャープ株式会社 | 半導体デバイスの製造方法 |
| DE4428808C2 (de) * | 1994-08-13 | 2003-07-17 | Bosch Gmbh Robert | Verfahren zur Herstellung eines Bauelementes nach dem Anodic-Bonding-Verfahren und Bauelement |
| JP3199963B2 (ja) * | 1994-10-06 | 2001-08-20 | 株式会社東芝 | 半導体装置の製造方法 |
| US5929517A (en) | 1994-12-29 | 1999-07-27 | Tessera, Inc. | Compliant integrated circuit package and method of fabricating the same |
| US5951813A (en) * | 1996-05-02 | 1999-09-14 | Raytheon Company | Top of die chip-on-board encapsulation |
| JP2871591B2 (ja) * | 1996-05-14 | 1999-03-17 | 日本電気株式会社 | 高周波用電子部品および高周波用電子部品の製造方法 |
| US5656549A (en) * | 1996-08-19 | 1997-08-12 | Motorola, Inc. | Method of packaging a semiconductor device |
| JPH11121488A (ja) * | 1997-10-15 | 1999-04-30 | Toshiba Corp | 半導体装置の製造方法及び樹脂封止装置 |
| WO1999023700A1 (en) | 1997-11-05 | 1999-05-14 | Martin Robert A | Chip housing, methods of making same and methods for mounting chips therein |
| JP3132449B2 (ja) * | 1998-01-09 | 2001-02-05 | 日本電気株式会社 | 樹脂外装型半導体装置の製造方法 |
| JP3486557B2 (ja) | 1998-07-30 | 2004-01-13 | 宮崎沖電気株式会社 | トランスファ成形装置及び半導体装置の製造方法 |
| US6214640B1 (en) | 1999-02-10 | 2001-04-10 | Tessera, Inc. | Method of manufacturing a plurality of semiconductor packages |
| SG92685A1 (en) * | 1999-03-10 | 2002-11-19 | Towa Corp | Method of coating semiconductor wafer with resin and mold used therefor |
| US6576496B1 (en) * | 2000-08-21 | 2003-06-10 | Micron Technology, Inc. | Method and apparatus for encapsulating a multi-chip substrate array |
| JP3711333B2 (ja) * | 2001-07-27 | 2005-11-02 | 沖電気工業株式会社 | 半導体装置の製造方法および樹脂封止装置 |
| US7335995B2 (en) * | 2001-10-09 | 2008-02-26 | Tessera, Inc. | Microelectronic assembly having array including passive elements and interconnects |
| US6897565B2 (en) * | 2001-10-09 | 2005-05-24 | Tessera, Inc. | Stacked packages |
| US6977440B2 (en) * | 2001-10-09 | 2005-12-20 | Tessera, Inc. | Stacked packages |
| TW548816B (en) * | 2002-01-23 | 2003-08-21 | Via Tech Inc | Formation method of conductor pillar |
| JP4519398B2 (ja) * | 2002-11-26 | 2010-08-04 | Towa株式会社 | 樹脂封止方法及び半導体装置の製造方法 |
| KR100510517B1 (ko) * | 2003-01-29 | 2005-08-26 | 삼성전자주식회사 | 보호캡을 가지는 플립칩 패키지의 제조 방법 |
| JP4794354B2 (ja) * | 2006-05-23 | 2011-10-19 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
| US7961470B2 (en) * | 2006-07-19 | 2011-06-14 | Infineon Technologies Ag | Power amplifier |
| JP2009099905A (ja) * | 2007-10-19 | 2009-05-07 | Rohm Co Ltd | 半導体装置 |
| US8084301B2 (en) * | 2008-09-11 | 2011-12-27 | Sanyo Electric Co., Ltd. | Resin sheet, circuit device and method of manufacturing the same |
| JP5542318B2 (ja) * | 2008-09-29 | 2014-07-09 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 樹脂シートおよびそれを用いた回路装置の製造方法 |
| JP4929382B2 (ja) * | 2010-07-13 | 2012-05-09 | 株式会社東芝 | 電子部品構造体及び電子機器 |
| KR101259844B1 (ko) * | 2011-01-31 | 2013-05-03 | 엘지이노텍 주식회사 | 리드 크랙이 강화된 전자소자용 탭 테이프 및 그의 제조 방법 |
| JP6057824B2 (ja) * | 2013-04-19 | 2017-01-11 | Towa株式会社 | 電子部品の圧縮樹脂封止方法及び圧縮樹脂封止装置 |
| CN104022145B (zh) * | 2014-06-23 | 2017-01-25 | 深圳市华星光电技术有限公司 | 基板的封装方法及封装结构 |
| US20180117813A1 (en) * | 2016-11-02 | 2018-05-03 | Asm Technology Singapore Pte Ltd | Molding apparatus including a compressible structure |
| KR102687751B1 (ko) * | 2019-07-15 | 2024-07-23 | 에스케이하이닉스 주식회사 | 브리지 다이를 포함한 반도체 패키지 |
| CN112432539B (zh) * | 2020-12-03 | 2025-01-24 | 浙江银轮机械股份有限公司 | 多级中冷器及其水路隔离件和水路隔离组件 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5739558A (en) * | 1980-08-20 | 1982-03-04 | Citizen Watch Co Ltd | Resin sealing method for ic |
| JPS57148360A (en) * | 1981-03-09 | 1982-09-13 | Seiko Keiyo Kogyo Kk | Semiconductor device |
| JPS5818931A (ja) * | 1981-07-28 | 1983-02-03 | Citizen Watch Co Ltd | Icの封止方法 |
| JPS58122757A (ja) * | 1982-01-18 | 1983-07-21 | Seiko Keiyo Kogyo Kk | 樹脂モ−ルド半導体装置 |
| JPS58165333A (ja) * | 1982-03-26 | 1983-09-30 | Toshiba Corp | 半導体装置の製造方法 |
-
1991
- 1991-12-25 JP JP3357062A patent/JP3059560B2/ja not_active Expired - Fee Related
-
1992
- 1992-11-14 TW TW081109119A patent/TW226483B/zh active
- 1992-12-22 US US07/994,888 patent/US5304512A/en not_active Expired - Lifetime
- 1992-12-23 KR KR1019920025180A patent/KR930014852A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JP3059560B2 (ja) | 2000-07-04 |
| US5304512A (en) | 1994-04-19 |
| TW226483B (enExample) | 1994-07-11 |
| JPH05175264A (ja) | 1993-07-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| PC1203 | Withdrawal of no request for examination |
St.27 status event code: N-1-6-B10-B12-nap-PC1203 |
|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid | ||
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |