KR930007523B1 - 반도체 기억 장치 및 그 제조방법 - Google Patents

반도체 기억 장치 및 그 제조방법 Download PDF

Info

Publication number
KR930007523B1
KR930007523B1 KR1019900006855A KR900006855A KR930007523B1 KR 930007523 B1 KR930007523 B1 KR 930007523B1 KR 1019900006855 A KR1019900006855 A KR 1019900006855A KR 900006855 A KR900006855 A KR 900006855A KR 930007523 B1 KR930007523 B1 KR 930007523B1
Authority
KR
South Korea
Prior art keywords
groove
capacitor
semiconductor substrate
insulating film
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019900006855A
Other languages
English (en)
Korean (ko)
Other versions
KR900019236A (ko
Inventor
가오루 모도나미
Original Assignee
미쓰비시 뎅끼 가부시끼가이샤
시기 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅끼 가부시끼가이샤, 시기 모리야 filed Critical 미쓰비시 뎅끼 가부시끼가이샤
Publication of KR900019236A publication Critical patent/KR900019236A/ko
Application granted granted Critical
Publication of KR930007523B1 publication Critical patent/KR930007523B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019900006855A 1989-05-22 1990-05-14 반도체 기억 장치 및 그 제조방법 Expired - Fee Related KR930007523B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP01-129252 1989-05-22
JP1129252A JPH0770618B2 (ja) 1989-05-22 1989-05-22 半導体記憶装置およびその製造方法
JP1-129252 1989-05-22

Publications (2)

Publication Number Publication Date
KR900019236A KR900019236A (ko) 1990-12-24
KR930007523B1 true KR930007523B1 (ko) 1993-08-12

Family

ID=15004973

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900006855A Expired - Fee Related KR930007523B1 (ko) 1989-05-22 1990-05-14 반도체 기억 장치 및 그 제조방법

Country Status (4)

Country Link
US (1) US5089868A (https=)
JP (1) JPH0770618B2 (https=)
KR (1) KR930007523B1 (https=)
DE (1) DE4001872A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225698A (en) * 1989-08-12 1993-07-06 Samsung Electronics Co., Inc. Semi-conductor device with stacked trench capacitor
KR910013554A (ko) * 1989-12-08 1991-08-08 김광호 반도체 장치 및 그 제조방법
US5363327A (en) * 1993-01-19 1994-11-08 International Business Machines Corporation Buried-sidewall-strap two transistor one capacitor trench cell
US5808335A (en) * 1996-06-13 1998-09-15 Vanguard International Semiconductor Corporation Reduced mask DRAM process
US6476435B1 (en) 1997-09-30 2002-11-05 Micron Technology, Inc. Self-aligned recessed container cell capacitor
US20040061990A1 (en) * 2002-09-26 2004-04-01 Dougherty T. Kirk Temperature-compensated ferroelectric capacitor device, and its fabrication

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60126861A (ja) * 1983-12-13 1985-07-06 Fujitsu Ltd 半導体記憶装置
JPS60213053A (ja) * 1984-04-09 1985-10-25 Oki Electric Ind Co Ltd 半導体メモリ素子
JPS6155957A (ja) * 1984-08-27 1986-03-20 Toshiba Corp 半導体記憶装置
JPS6156444A (ja) * 1984-08-28 1986-03-22 Toshiba Corp 半導体装置
US4914739A (en) * 1984-10-31 1990-04-03 Texas Instruments, Incorporated Structure for contacting devices in three dimensional circuitry
JPS61150366A (ja) * 1984-12-25 1986-07-09 Nec Corp Ｍｉｓ型メモリ−セル
JPS61234067A (ja) * 1985-04-10 1986-10-18 Oki Electric Ind Co Ltd 高密度型ｄｒａｍセル
JPS627153A (ja) * 1985-07-03 1987-01-14 Hitachi Ltd 半導体メモリ
JPS6237962A (ja) * 1985-08-13 1987-02-18 Matsushita Electronics Corp 半導体メモリ装置
JPS6265559A (ja) * 1985-09-17 1987-03-24 Toshiba Corp フアクシミリ通信システム
JPH0650766B2 (ja) * 1985-09-27 1994-06-29 株式会社東芝 半導体メモリ装置
JPS6284543A (ja) * 1985-10-08 1987-04-18 Toshiba Corp 半導体装置の製造方法
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPS62136069A (ja) * 1985-12-10 1987-06-19 Hitachi Ltd 半導体装置およびその製造方法
JPS62190868A (ja) * 1986-02-18 1987-08-21 Matsushita Electronics Corp 半導体記憶装置
JPS62248248A (ja) * 1986-04-22 1987-10-29 Matsushita Electronics Corp 半導体記憶装置
JPS63146461A (ja) * 1986-12-10 1988-06-18 Mitsubishi Electric Corp 半導体記憶装置
US4835589A (en) * 1987-09-28 1989-05-30 Motorola, Inc. Ram cell having trench sidewall load
JPH01154551A (ja) * 1987-12-11 1989-06-16 Oki Electric Ind Co Ltd 半導体メモリ集積回路装置及びその製造方法
JPH02177359A (ja) * 1988-12-27 1990-07-10 Nec Corp 半導体記憶装置
JPH0738869B2 (ja) * 1993-02-18 1995-05-01 工業技術院長 下肢装具の靴底

Also Published As

Publication number Publication date
JPH02307262A (ja) 1990-12-20
US5089868A (en) 1992-02-18
DE4001872C2 (https=) 1993-09-02
KR900019236A (ko) 1990-12-24
DE4001872A1 (de) 1990-11-29
JPH0770618B2 (ja) 1995-07-31

Similar Documents

Publication Publication Date Title
KR940005888B1 (ko) 반도체기억장치 및 그 제조방법
US5032882A (en) Semiconductor device having trench type structure
EP0337436A2 (en) Semiconductor memory device having improved dynamic memory cell structure
EP0175378A2 (en) Dynamic random access memory (DRAM)
KR930010823B1 (ko) 반도체 기억장치
JPH0412564A (ja) 半導体記憶装置およびその製造方法
US5441916A (en) Method of manufacturing semiconductor device comprising interconnection
US5247196A (en) Semiconductor memory device including capacitor having stacked structure and manufacturing method thereof
US5185284A (en) Method of making a semiconductor memory device
KR960015522B1 (ko) 반도체 기억장치
US5225699A (en) Dram having a large dielectric breakdown voltage between an adjacent conductive layer and a capacitor electrode and method of manufacture thereof
US5229314A (en) Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation
US4921815A (en) Method of producing a semiconductor memory device having trench capacitors
KR930007523B1 (ko) 반도체 기억 장치 및 그 제조방법
US5183774A (en) Method of making a semiconductor memory device
KR900005664B1 (ko) 반도체 기억장치
US5272103A (en) DRAM having a large dielectric breakdown voltage between an adjacent conductive layer and a capacitor electrode and method of manufacture thereof
US5068698A (en) MOS semiconductor device having high-capacity stacked capacitor
US4891327A (en) Method for manufacturing field effect transistor
US5180683A (en) Method of manufacturing stacked capacitor type semiconductor memory device
JPH0612804B2 (ja) 半導体記憶装置
US5300444A (en) Method of manufacturing a semiconductor device having a stacked structure formed of polycrystalline silicon film and silicon oxide film
EP0299525A2 (en) Semiconductor memory device with improved capacitor structure
JP2514435B2 (ja) 半導体記憶装置およびその製造方法
JP2512902B2 (ja) 半導体記憶装置の製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20040809

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20050813

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20050813

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000