KR920007786B1 - 전계효과형 트랜지스터의 제조방법 - Google Patents

전계효과형 트랜지스터의 제조방법 Download PDF

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Publication number
KR920007786B1
KR920007786B1 KR1019840008292A KR840008292A KR920007786B1 KR 920007786 B1 KR920007786 B1 KR 920007786B1 KR 1019840008292 A KR1019840008292 A KR 1019840008292A KR 840008292 A KR840008292 A KR 840008292A KR 920007786 B1 KR920007786 B1 KR 920007786B1
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South Korea
Prior art keywords
film
annealing
field effect
effect transistor
manufacturing
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KR1019840008292A
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English (en)
Korean (ko)
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KR850005163A (ko
Inventor
히사오 하야시
히사요시 야모도
지아끼 사까이
Original Assignee
쏘니 가부시기가이샤
오오가 노리오
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Publication of KR850005163A publication Critical patent/KR850005163A/ko
Application granted granted Critical
Publication of KR920007786B1 publication Critical patent/KR920007786B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
KR1019840008292A 1983-12-24 1984-12-24 전계효과형 트랜지스터의 제조방법 Expired KR920007786B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP58-248972 1983-12-24
JP58248972A JPS60136259A (ja) 1983-12-24 1983-12-24 電界効果型トランジスタの製造方法
JP83-248972 1983-12-24

Publications (2)

Publication Number Publication Date
KR850005163A KR850005163A (ko) 1985-08-21
KR920007786B1 true KR920007786B1 (ko) 1992-09-17

Family

ID=17186123

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840008292A Expired KR920007786B1 (ko) 1983-12-24 1984-12-24 전계효과형 트랜지스터의 제조방법

Country Status (2)

Country Link
JP (1) JPS60136259A (enrdf_load_stackoverflow)
KR (1) KR920007786B1 (enrdf_load_stackoverflow)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6284562A (ja) * 1985-10-08 1987-04-18 Seiko Epson Corp 半導体装置とその製造方法
JPS62204575A (ja) * 1986-03-05 1987-09-09 Matsushita Electric Ind Co Ltd 薄膜半導体装置およびその製造方法
JP2865284B2 (ja) * 1986-03-10 1999-03-08 松下電器産業株式会社 薄膜半導体デバイス
JPH0750737B2 (ja) * 1987-03-02 1995-05-31 日本電気株式会社 半導体装置の製造方法
JP2802618B2 (ja) * 1987-03-26 1998-09-24 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP2764395B2 (ja) * 1987-04-20 1998-06-11 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JPS6432678A (en) * 1987-07-28 1989-02-02 Ricoh Kk Thin-film transistor
JP2589327B2 (ja) * 1987-11-14 1997-03-12 株式会社リコー 薄膜トランジスタの製造方法
JP2712433B2 (ja) * 1988-12-07 1998-02-10 富士ゼロックス株式会社 逆スタガード型薄膜トランジスタの製造方法
JP2894391B2 (ja) * 1991-09-20 1999-05-24 三菱電機株式会社 薄膜トランジスタおよびその製造方法
JPH05218430A (ja) * 1992-02-07 1993-08-27 G T C:Kk 多結晶シリコン薄膜トランジスタおよびその製造方法
US5440168A (en) * 1993-02-22 1995-08-08 Ryoden Semiconductor System Engineering Corporation Thin-film transistor with suppressed off-current and Vth
US5719065A (en) 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
JP2899959B2 (ja) * 1996-12-09 1999-06-02 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP2899960B2 (ja) * 1996-12-09 1999-06-02 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP5057605B2 (ja) * 1999-03-17 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
WO2006025820A1 (en) * 2004-08-26 2006-03-09 Midwest Research Institute Method for passivating crystal silicon surfaces
JP2007242895A (ja) 2006-03-08 2007-09-20 Mitsubishi Electric Corp 薄膜トランジスタ装置及びその製造方法
JP5172178B2 (ja) 2007-03-15 2013-03-27 三菱電機株式会社 薄膜トランジスタ、それを用いた表示装置、及びそれらの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5550663A (en) * 1978-10-07 1980-04-12 Shunpei Yamazaki Semiconductor device and method of fabricating the same
JPS57169248A (en) * 1981-04-13 1982-10-18 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPS5884466A (ja) * 1981-11-13 1983-05-20 Canon Inc 半導体素子
JPS59136926A (ja) * 1983-01-25 1984-08-06 Seiko Epson Corp 半導体装置の製法
JPH0338755A (ja) * 1989-07-05 1991-02-19 Nec Corp ファイル転送システム

Also Published As

Publication number Publication date
KR850005163A (ko) 1985-08-21
JPH0457098B2 (enrdf_load_stackoverflow) 1992-09-10
JPS60136259A (ja) 1985-07-19

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