KR920003468B1 - 반도체 집적회로장치 - Google Patents

반도체 집적회로장치 Download PDF

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Publication number
KR920003468B1
KR920003468B1 KR1019890001160A KR890001160A KR920003468B1 KR 920003468 B1 KR920003468 B1 KR 920003468B1 KR 1019890001160 A KR1019890001160 A KR 1019890001160A KR 890001160 A KR890001160 A KR 890001160A KR 920003468 B1 KR920003468 B1 KR 920003468B1
Authority
KR
South Korea
Prior art keywords
potential
input signal
transistor
signal line
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019890001160A
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English (en)
Korean (ko)
Other versions
KR890017789A (ko
Inventor
야스지 나가야마
가즈도시 히라야마
아쯔시 오사끼
Original Assignee
미쓰비시 뎅끼 가부시끼가이샤
시기 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅끼 가부시끼가이샤, 시기 모리야 filed Critical 미쓰비시 뎅끼 가부시끼가이샤
Publication of KR890017789A publication Critical patent/KR890017789A/ko
Application granted granted Critical
Publication of KR920003468B1 publication Critical patent/KR920003468B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied

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  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)
KR1019890001160A 1988-05-07 1989-02-01 반도체 집적회로장치 Expired KR920003468B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-110814 1988-05-07
JP63110814A JPH01280923A (ja) 1988-05-07 1988-05-07 半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR890017789A KR890017789A (ko) 1989-12-18
KR920003468B1 true KR920003468B1 (ko) 1992-05-01

Family

ID=14545334

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890001160A Expired KR920003468B1 (ko) 1988-05-07 1989-02-01 반도체 집적회로장치

Country Status (4)

Country Link
US (1) US4985641A (https=)
JP (1) JPH01280923A (https=)
KR (1) KR920003468B1 (https=)
DE (1) DE3911450A1 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051622A (en) * 1989-11-08 1991-09-24 Chips And Technologies, Inc. Power-on strap inputs
JPH03228351A (ja) * 1990-02-02 1991-10-09 Mitsubishi Electric Corp 半導体装置
JP3079515B2 (ja) * 1991-01-29 2000-08-21 株式会社東芝 ゲ−トアレイ装置及び入力回路及び出力回路及び降圧回路
JPH04278558A (ja) * 1991-03-07 1992-10-05 Nec Corp 半導体装置
JP2827062B2 (ja) * 1991-09-04 1998-11-18 シャープ株式会社 集積回路
JPH0669425A (ja) * 1992-06-10 1994-03-11 Nec Corp 半導体装置
DE69326284T2 (de) * 1992-06-10 2000-03-23 Nec Corp., Tokio/Tokyo Halbleiteranordnung mit anschlusswählender Schaltung
JP2994168B2 (ja) * 1993-03-10 1999-12-27 日本電気株式会社 初期状態設定回路
US5574633A (en) * 1994-02-23 1996-11-12 At&T Global Information Solubions Company Multi-phase charge sharing method and apparatus
EP0685847B1 (en) * 1994-05-31 2002-05-02 STMicroelectronics S.r.l. Low dissipation initialization circuit, particularly for memory registers
US5581201A (en) * 1994-06-30 1996-12-03 Tandem Computers Incorporated Apparatus for unit control and presence detection
US6804760B2 (en) 1994-12-23 2004-10-12 Micron Technology, Inc. Method for determining a type of memory present in a system
US6525971B2 (en) 1995-06-30 2003-02-25 Micron Technology, Inc. Distributed write data drivers for burst access memories
US5526320A (en) 1994-12-23 1996-06-11 Micron Technology Inc. Burst EDO memory device
US5698903A (en) * 1995-05-09 1997-12-16 United Memories, Inc. Bond pad option for integrated circuits
JP3415347B2 (ja) * 1995-10-25 2003-06-09 Ｎｅｃエレクトロニクス株式会社 マイクロコンピュータの動作モード設定用入力回路
US7681005B1 (en) * 1996-01-11 2010-03-16 Micron Technology, Inc. Asynchronously-accessible memory device with mode selection circuitry for burst or pipelined operation
KR100203140B1 (ko) * 1996-06-29 1999-06-15 김영환 입력 누설 전류가 없는 자동 모드 선택 장치
US6401186B1 (en) 1996-07-03 2002-06-04 Micron Technology, Inc. Continuous burst memory which anticipates a next requested start address
US6981126B1 (en) * 1996-07-03 2005-12-27 Micron Technology, Inc. Continuous interleave burst access
KR100206931B1 (ko) * 1996-08-23 1999-07-01 구본준 전원 인가 회로
JP3319960B2 (ja) * 1996-10-17 2002-09-03 富士通株式会社 半導体装置
US7103742B1 (en) 1997-12-03 2006-09-05 Micron Technology, Inc. Burst/pipelined edo memory device
US6335646B1 (en) * 1999-04-28 2002-01-01 Oki Electric Industry Co., Ltd. Power-on reset circuit for generating a reset pulse signal upon detection of a power supply voltage
DE10114767B4 (de) * 2001-03-26 2017-04-27 Tdk-Micronas Gmbh Verfahren zur Realisierung von Verdrahtungsoptionen bei einem integrierten Schaltkreis und integrierter Schaltkreis
US7131033B1 (en) 2002-06-21 2006-10-31 Cypress Semiconductor Corp. Substrate configurable JTAG ID scheme
US7818640B1 (en) 2004-10-22 2010-10-19 Cypress Semiconductor Corporation Test system having a master/slave JTAG controller
US8680901B2 (en) * 2012-08-06 2014-03-25 Texas Instruments Incorporated Power on reset generation circuits in integrated circuits

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3569729A (en) * 1966-07-05 1971-03-09 Hayakawa Denki Kogyo Kk Integrated fet structure with substrate biasing means to effect bidirectional transistor operation
US4307306A (en) * 1979-05-17 1981-12-22 Rca Corporation IC Clamping circuit
JPS58140649A (ja) * 1982-02-16 1983-08-20 Fujitsu Ltd 電圧検出回路
DE3218992A1 (de) * 1982-05-19 1983-11-24 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter schaltkreis
US4591745A (en) * 1984-01-16 1986-05-27 Itt Corporation Power-on reset pulse generator
US4631420A (en) * 1984-02-09 1986-12-23 Sanders Associates, Inc. Dynamic flip-flop with static reset
US4581552A (en) * 1984-02-17 1986-04-08 Texas Instruments Incorporated Power-up clear circuitry having two thresholds
JPS6110319A (ja) * 1984-05-30 1986-01-17 Fujitsu Ltd 出力制御回路
US4716323A (en) * 1985-04-27 1987-12-29 Kabushiki Kaisha Toshiba Power voltage drop detecting circuit
US4677321A (en) * 1985-09-10 1987-06-30 Harris Corporation TTL compatible input buffer
JPH0685497B2 (ja) * 1985-12-20 1994-10-26 株式会社東芝 半導体集積回路
US4716322A (en) * 1986-03-25 1987-12-29 Texas Instruments Incorporated Power-up control circuit including a comparator, Schmitt trigger, and latch
JP2605687B2 (ja) * 1986-04-17 1997-04-30 三菱電機株式会社 半導体装置
JP2741022B2 (ja) * 1987-04-01 1998-04-15 三菱電機株式会社 パワーオンリセツトパルス発生回路
FR2619939B1 (fr) * 1987-09-01 1989-12-08 Thomson Semiconducteurs Circuit de detection de transitions d'adresses
US4812679A (en) * 1987-11-09 1989-03-14 Motorola, Inc. Power-on reset circuit
US4877980A (en) * 1988-03-10 1989-10-31 Advanced Micro Devices, Inc. Time variant drive circuit for high speed bus driver to limit oscillations or ringing on a bus
US4885476A (en) * 1989-03-06 1989-12-05 Motorola, Inc. Power-on reset circuit

Also Published As

Publication number Publication date
US4985641A (en) 1991-01-15
DE3911450A1 (de) 1989-11-16
KR890017789A (ko) 1989-12-18
DE3911450C2 (https=) 1993-07-01
JPH01280923A (ja) 1989-11-13

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