KR920001743A - Ldd구조 및 제조방법 - Google Patents

Ldd구조 및 제조방법 Download PDF

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KR920001743A
KR920001743A KR1019900009896A KR900009896A KR920001743A KR 920001743 A KR920001743 A KR 920001743A KR 1019900009896 A KR1019900009896 A KR 1019900009896A KR 900009896 A KR900009896 A KR 900009896A KR 920001743 A KR920001743 A KR 920001743A
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South Korea
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poly
mask
gate
nitride film
photoresist
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KR1019900009896A
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KR930011031B1 (ko
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구정석
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문정환
금성일렉트론 주식회사
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Priority to KR1019900009896A priority Critical patent/KR930011031B1/ko
Priority to JP3158627A priority patent/JP2602589B2/ja
Priority to DE4121456A priority patent/DE4121456C2/de
Publication of KR920001743A publication Critical patent/KR920001743A/ko
Priority to US08/008,096 priority patent/US5262664A/en
Priority to US08/075,633 priority patent/US5389557A/en
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Publication of KR930011031B1 publication Critical patent/KR930011031B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H01L29/41783—Raised source or drain electrodes self aligned with the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate

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  • Microelectronics & Electronic Packaging (AREA)
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  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음.

Description

LDD구조 및 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 (가) (나) (다) (라) (마) (바) (사)는 본 발명에 따른 LDD제조공정도.

Claims (2)

  1. P형 기판 (1)위에 질화막(a)을 데포지션 한뒤 마스크를 써서 에치하고 피일드산화막(2)을 형성하고 공정과, 질화막(a)을 없애고 게이트 산화막(3)을 기른뒤 폴리(4), 질화막(b) 폴리(c)를 데포지션하고 마스크를 써서 게이트를 만드는 공정과, S/W스페이서(d)를 만들고 도프트되지 않은 폴리(5)를 데포지션 한뒤 비소를 이온 주입하는 공정과 마스크를써서 폴리(5)를 잘라내고 포토레지스트(e)를 입힌뒤 폴리(5)가 드러날때까지 에치 백하여 상기 포토레지스트(e)를 평탄화하는 공정과, 선택도를 높여 질화막(b)이 드러날때까지 폴리(c,5)를 에치시키는 공정과, S/W스페이서(d)을 에치해서 없애고 포토레지스트(e)를 벗겨낸뒤 인과 붕소를 각각 이온주입해서 상기 S/W스페이서가 있던 자리 밑부분에만N-(6)와 P포켓(7)을 만들어 주는공정과, 상기 공정완료후 절연물질(9)을 채우고 열처리하여 폴리(5)에서 확산된 비소에 의해 얇은n+(8)을 형성시키고 폴리(5)위에 콘텍트를 뚫고 메탈(10)을 증착하여 인터코넥션을 하는 공정을 포함하여 이루어진 것을 특징으로 하는 LDD제조방법.
  2. LDD트랜지스터에 있어서, 폴리(5)밑에 형성된 N+형 S/D와 접합 두께가 게이트가 (4) 와 인접한 부분에만 존재하는 N-형의 접합 두께보다 적으며 게이트와 인접한 부분에만 포켓(7)을 형성하여 구성된 것을특징으로 하는 LDD트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019900009896A 1990-06-30 1990-06-30 Ldd 제조방법 및 구조 KR930011031B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019900009896A KR930011031B1 (ko) 1990-06-30 1990-06-30 Ldd 제조방법 및 구조
JP3158627A JP2602589B2 (ja) 1990-06-30 1991-06-28 Ｌｄｄトランジスタの製造方法
DE4121456A DE4121456C2 (de) 1990-06-30 1991-06-28 LDD-Transistor und Verfahren zu seiner Herstellung
US08/008,096 US5262664A (en) 1990-06-30 1993-01-22 Process for formation of LDD transistor, and structure thereof
US08/075,633 US5389557A (en) 1990-06-30 1993-06-10 Process for formation of LDD transistor, and structure thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900009896A KR930011031B1 (ko) 1990-06-30 1990-06-30 Ldd 제조방법 및 구조

Publications (2)

Publication Number Publication Date
KR920001743A true KR920001743A (ko) 1992-01-30
KR930011031B1 KR930011031B1 (ko) 1993-11-19

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KR1019900009896A KR930011031B1 (ko) 1990-06-30 1990-06-30 Ldd 제조방법 및 구조

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JP (1) JP2602589B2 (ko)
KR (1) KR930011031B1 (ko)
DE (1) DE4121456C2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010000789A (ko) * 2000-10-19 2001-01-05 김주연 맥반석을 함유한 합성수지재 몰딩의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442589A (en) * 1981-03-05 1984-04-17 International Business Machines Corporation Method for manufacturing field effect transistors
DE3273867D1 (en) * 1981-07-27 1986-11-20 Xerox Corp Field effect transistor
DE3279662D1 (en) * 1981-12-30 1989-06-01 Thomson Components Mostek Corp Triple diffused short channel device structure
JPS60263468A (ja) * 1984-06-12 1985-12-26 Toshiba Corp 半導体装置の製造方法
US4697198A (en) * 1984-08-22 1987-09-29 Hitachi, Ltd. MOSFET which reduces the short-channel effect
EP0227971A1 (de) * 1985-12-17 1987-07-08 Siemens Aktiengesellschaft MOS-Transistor mit kurzer Gatelänge für hochintegrierte Schaltungen und Verfahren zu seiner Herstellung
DE3737144A1 (de) * 1986-11-10 1988-05-11 Hewlett Packard Co Metalloxid-halbleiter-feldeffekttransistor (mosfet) und verfahren zu seiner herstellung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010000789A (ko) * 2000-10-19 2001-01-05 김주연 맥반석을 함유한 합성수지재 몰딩의 제조방법

Also Published As

Publication number Publication date
JP2602589B2 (ja) 1997-04-23
JPH04233238A (ja) 1992-08-21
KR930011031B1 (ko) 1993-11-19
DE4121456A1 (de) 1992-01-09
DE4121456C2 (de) 1996-08-29

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