KR910006781A - 방사선-중합성 혼합물 및 땜납 내식막 마스크의 제조방법 - Google Patents

방사선-중합성 혼합물 및 땜납 내식막 마스크의 제조방법 Download PDF

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KR910006781A
KR910006781A KR1019900014795A KR900014795A KR910006781A KR 910006781 A KR910006781 A KR 910006781A KR 1019900014795 A KR1019900014795 A KR 1019900014795A KR 900014795 A KR900014795 A KR 900014795A KR 910006781 A KR910006781 A KR 910006781A
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weight
radiation
polymerizable
polymerizable mixture
binder
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KR1019900014795A
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KR0161970B1 (ko
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엠멜리우스 미카엘
헤르비크 발터
에르베스 쿠르트
덱커 루돌프
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칼-헤르만 마이어-둘호이에르, 한스-요아킴 노이바우어
훽스트 아크티엔게젤샤프트
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/285—Permanent coating compositions
    • H05K3/287—Photosensitive compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F257/00—Macromolecular compounds obtained by polymerising monomers on to polymers of aromatic monomers as defined in group C08F12/00
    • C08F257/02—Macromolecular compounds obtained by polymerising monomers on to polymers of aromatic monomers as defined in group C08F12/00 on to polymers of styrene or alkyl-substituted styrenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
    • C08F283/10—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polymers containing more than one epoxy radical per molecule
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0793—Aqueous alkaline solution, e.g. for cleaning or etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/136—Coating process making radiation sensitive element

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Polymerisation Methods In General (AREA)
  • Epoxy Resins (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Dental Preparations (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Reinforced Plastic Materials (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

내용 없음

Description

방사선-중합성 혼합물 및 땜납 내식막 마스크의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (9)

  1. a) 라디칼-개시된 부가-형 쇄 중합화에 의해 가교결합 중합체를 형성할 수 있는, 적어도 두개의 에틸렌성 불포화 말단 그룹을 갖는 화합물, b) 메트아크릴산, 메트아크릴산 에스테르 및, 40 내지 65중량%의 스티렌 단위를 함유하는 중합성 결합제, c) 실릭 염기 또는 실리케이트 염기를 갖는 미분된 무기안료, d) 방사선-활성화 중합 개시제, e) 분자내에 적어도 두개의 에폭시 그룹을 함유하는 화합물 및 f) 에폭시 그룹을 위한 열 활성화가능 중부가 개시제를 함유하는 방사선-중합성 혼합물.
  2. 제1항에 있어서, 추가로 염료를 함유하는 방사선-중합성 혼합물.
  3. 제1항에 있어서, 중부가 개시제가 유기아민인 방사선-중합성 혼합물.
  4. 제1항에 있어서, 결합제의 산가가 110 내지 280인 방사선-중합성 혼합물.
  5. 제1항에 있어서, 결합제가 알킬 그룹내에 1 내지 10개의 탄소원자를 함유하는 메트아크릴산 알킬 에스테르 단위를 함유하는 방사선-중합성 혼합물.
  6. 제1항에 있어서, 결합제가 매트아크릴산 에스테르 단위 5 내지 40중량%를 함유하는 방사선-중합성 혼합물.
  7. 제1항에 있어서, 총 비휘발성 성분을 기준하여 중합성 화합물(a) 10 내지 35중량%, 중합성 결합제(b) 15 내지 50중량%, 안료(c) 20 내지 50중량%, 중합 개시제(d) 0.01 내지 10중량%, 에폭시 화합물 (e) 10 내지 30중량% 및 중부가 개시제 (f) 0.15 내지 1.5중량%을 함유하는 방사선-중합성 혼합물.
  8. 제1항 내지 제7항중 어느 한 항에서 청구된 혼합물 용액 또는 분산액을 인쇄회로 표면상에 부착시키고, 이를 건조시킨후, 수득된 층을 화학 광선으로 상에 노출시켜 납땜 패드로 부터 물질을 제거하고, 현상액으로 비조사층 영역을 세척한후, 수득된 땜납 마스크를 승온으로 가열함을 특징으로 하는, 땜납 내식막 마스크의 제조방법.
  9. 제8항에 있어서, 땜납 마스크를 80 내지 150℃범위의 온도에서 10 내지 60분간 가열하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900014795A 1989-09-21 1990-09-19 방사선 중합성 혼합물 및 땜납내식막 마스크의 제조방법 KR0161970B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE3931467A DE3931467A1 (de) 1989-09-21 1989-09-21 Durch strahlung polymerisierbares gemisch und verfahren zur herstellung einer loetstopmaske
DEP39314677 1989-09-21
DEP3931467.7 1989-09-21

Publications (2)

Publication Number Publication Date
KR910006781A true KR910006781A (ko) 1991-04-30
KR0161970B1 KR0161970B1 (ko) 1999-01-15

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KR1019900014795A KR0161970B1 (ko) 1989-09-21 1990-09-19 방사선 중합성 혼합물 및 땜납내식막 마스크의 제조방법

Country Status (15)

Country Link
US (2) US5264324A (ko)
EP (1) EP0418733B1 (ko)
JP (1) JP2662083B2 (ko)
KR (1) KR0161970B1 (ko)
AT (1) ATE162316T1 (ko)
AU (1) AU633363B2 (ko)
CA (1) CA2025831C (ko)
DE (2) DE3931467A1 (ko)
DK (1) DK0418733T3 (ko)
ES (1) ES2110956T3 (ko)
FI (1) FI904605A0 (ko)
IE (1) IE903402A1 (ko)
IL (1) IL95739A (ko)
NO (1) NO904115L (ko)
ZA (1) ZA907479B (ko)

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Publication number Publication date
AU6304790A (en) 1991-03-28
KR0161970B1 (ko) 1999-01-15
ZA907479B (en) 1991-06-26
NO904115D0 (no) 1990-09-20
DE3931467A1 (de) 1991-04-04
EP0418733A3 (en) 1992-03-04
DK0418733T3 (da) 1998-09-07
CA2025831A1 (en) 1991-03-22
CA2025831C (en) 2001-11-20
ATE162316T1 (de) 1998-01-15
FI904605A0 (fi) 1990-09-19
JP2662083B2 (ja) 1997-10-08
US5387486A (en) 1995-02-07
DE59010796D1 (de) 1998-02-19
IL95739A0 (en) 1991-06-30
JPH03164742A (ja) 1991-07-16
EP0418733A2 (de) 1991-03-27
EP0418733B1 (de) 1998-01-14
US5264324A (en) 1993-11-23
NO904115L (no) 1991-03-22
IE903402A1 (en) 1991-04-10
ES2110956T3 (es) 1998-03-01
IL95739A (en) 1995-03-15
AU633363B2 (en) 1993-01-28

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