KR900019164A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR900019164A KR900019164A KR1019890006554A KR890006554A KR900019164A KR 900019164 A KR900019164 A KR 900019164A KR 1019890006554 A KR1019890006554 A KR 1019890006554A KR 890006554 A KR890006554 A KR 890006554A KR 900019164 A KR900019164 A KR 900019164A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor
- semiconductor substrate
- polysilicon films
- trench
- semiconductor devices
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 229920005591 polysilicon Polymers 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 239000003990 capacitor Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 도랑분리법에 의해 형성된 반도체 장치의 평면도, 제2도는 제1도에 도시된 평면도를 근거로 하여 제조되는 반도체장치의 일례를 나타낸 일부단면도.
Claims (2)
- 반도체기판상에 격자형상으로 형성되어 각 소자사이를 전기적으로 분리시켜주기 위한 도랑(1)이 구비되고, 이 도랑(1)에 의해 복수의 반도체소자영역(2)이 분리형성된 것을 특징으로 하는 반도체 장치.
- 반도체기판상에 격자형상으로 형성되어 각 소자사이를 전기적으로 분리시켜주기 위한 도랑(1)과, 이 도랑(1)에 의해 분리형성된 복수의 반도체소자영역(2), 상기 반도체기판상에 형성되는 2층의 다결정실리콘막〔21, 31(41)〕. 이 다결정실리콘막(21, 31)의 일부분상에 인출되어 형성되는 베이스전극 및 에미터전극, 상기 다결정실리콘막(21, 41)의 다른 부분에 유전체막(14)이 끼워넣어져 형성되는 캐패시터(15) 및, 상기 다결정실리콘막(21, 41)의 또 다른 부분에 의해 형성되는 저항(16)이 구비되어 구성된 것을 특징으로 하는 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63118304A JPH01289264A (ja) | 1988-05-17 | 1988-05-17 | 半導体装置 |
JP63-118304 | 1988-05-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR900019164A true KR900019164A (ko) | 1990-12-24 |
Family
ID=14733369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890006554A KR900019164A (ko) | 1988-05-17 | 1989-05-17 | 반도체 장치 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0346625B1 (ko) |
JP (1) | JPH01289264A (ko) |
KR (1) | KR900019164A (ko) |
DE (1) | DE68927487T2 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2580787B2 (ja) * | 1989-08-24 | 1997-02-12 | 日本電気株式会社 | 半導体装置 |
JPH05121664A (ja) * | 1991-10-25 | 1993-05-18 | Nec Corp | 半導体装置 |
JP3157357B2 (ja) * | 1993-06-14 | 2001-04-16 | 株式会社東芝 | 半導体装置 |
EP0966040A1 (en) * | 1998-06-19 | 1999-12-22 | International Business Machines Corporation | Passive component above isolation trenches |
JP4528561B2 (ja) * | 2004-06-23 | 2010-08-18 | パナソニック株式会社 | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS501513B1 (ko) * | 1968-12-11 | 1975-01-18 | ||
US3624467A (en) * | 1969-02-17 | 1971-11-30 | Texas Instruments Inc | Monolithic integrated-circuit structure and method of fabrication |
US4391650A (en) * | 1980-12-22 | 1983-07-05 | Ncr Corporation | Method for fabricating improved complementary metal oxide semiconductor devices |
US4441249A (en) * | 1982-05-26 | 1984-04-10 | Bell Telephone Laboratories, Incorporated | Semiconductor integrated circuit capacitor |
-
1988
- 1988-05-17 JP JP63118304A patent/JPH01289264A/ja active Pending
-
1989
- 1989-05-16 DE DE68927487T patent/DE68927487T2/de not_active Expired - Fee Related
- 1989-05-16 EP EP89108759A patent/EP0346625B1/en not_active Expired - Lifetime
- 1989-05-17 KR KR1019890006554A patent/KR900019164A/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH01289264A (ja) | 1989-11-21 |
DE68927487T2 (de) | 1997-04-24 |
EP0346625A2 (en) | 1989-12-20 |
DE68927487D1 (de) | 1997-01-09 |
EP0346625B1 (en) | 1996-11-27 |
EP0346625A3 (en) | 1991-01-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
SUBM | Submission of document of abandonment before or after decision of registration |