KR900005641A - 박막 형성장치 및 방법 - Google Patents

박막 형성장치 및 방법

Info

Publication number
KR900005641A
KR900005641A KR1019890013162A KR890013162A KR900005641A KR 900005641 A KR900005641 A KR 900005641A KR 1019890013162 A KR1019890013162 A KR 1019890013162A KR 890013162 A KR890013162 A KR 890013162A KR 900005641 A KR900005641 A KR 900005641A
Authority
KR
South Korea
Prior art keywords
thin film
film forming
forming device
thin
forming
Prior art date
Application number
KR1019890013162A
Other languages
English (en)
Other versions
KR940003787B1 (ko
Inventor
준 고마다
신 아라끼
Original Assignee
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63228806A external-priority patent/JPH0689453B2/ja
Priority claimed from JP1034987A external-priority patent/JPH02217475A/ja
Application filed by 후지쓰 가부시끼가이샤 filed Critical 후지쓰 가부시끼가이샤
Publication of KR900005641A publication Critical patent/KR900005641A/ko
Application granted granted Critical
Publication of KR940003787B1 publication Critical patent/KR940003787B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019890013162A 1988-09-14 1989-09-11 박막 형성장치 및 방법 KR940003787B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP63228806A JPH0689453B2 (ja) 1988-09-14 1988-09-14 薄膜形成装置
JP63-228806 1988-09-14
JP1-34987 1989-02-16
JP1034987A JPH02217475A (ja) 1989-02-16 1989-02-16 薄膜形成装置
JP4326989 1989-02-27
JP1-43269 1989-02-27

Publications (2)

Publication Number Publication Date
KR900005641A true KR900005641A (ko) 1990-04-14
KR940003787B1 KR940003787B1 (ko) 1994-05-03

Family

ID=27288603

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890013162A KR940003787B1 (ko) 1988-09-14 1989-09-11 박막 형성장치 및 방법

Country Status (4)

Country Link
US (4) US5122431A (ko)
EP (1) EP0359264B1 (ko)
KR (1) KR940003787B1 (ko)
DE (1) DE68915088T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100358131B1 (ko) * 1995-12-29 2003-01-29 주식회사 하이닉스반도체 열산화막형성을위한방법및장치

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5582947A (en) * 1981-01-16 1996-12-10 Canon Kabushiki Kaisha Glow discharge process for making photoconductive member
KR940003787B1 (ko) * 1988-09-14 1994-05-03 후지쓰 가부시끼가이샤 박막 형성장치 및 방법
MX9303141A (es) * 1992-05-28 1994-04-29 Polar Materials Inc Metodos y aparatos para depositar recubrimientos de barrera.
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
JPH0697070A (ja) * 1992-09-11 1994-04-08 Sanyo Electric Co Ltd 多結晶シリコン膜の製造方法
US5976992A (en) * 1993-09-27 1999-11-02 Kabushiki Kaisha Toshiba Method of supplying excited oxygen
FR2711035B1 (fr) * 1993-10-04 1995-12-29 Plasmion Dispositif et procédé pour former un plasma par application de micro-ondes.
JP3175894B2 (ja) * 1994-03-25 2001-06-11 株式会社半導体エネルギー研究所 プラズマ処理装置及びプラズマ処理方法
WO1995034092A1 (en) * 1994-06-03 1995-12-14 Materials Research Corporation A method of nitridization of titanium thin films
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5975912A (en) * 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
FR2731370B1 (fr) * 1995-03-07 1997-06-06 Cie Generale D Optique Essilor Procede pour le depot assiste par plasma d'au moins une couche mince sur un substrat a deux faces, et reacteur correspondant
US5716485A (en) * 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
US5980999A (en) * 1995-08-24 1999-11-09 Nagoya University Method of manufacturing thin film and method for performing precise working by radical control and apparatus for carrying out such methods
JPH09148581A (ja) * 1995-11-17 1997-06-06 Sharp Corp 薄膜半導体装置の製造方法
US5643365A (en) * 1996-07-25 1997-07-01 Ceram Optec Industries Inc Method and device for plasma vapor chemical deposition of homogeneous films on large flat surfaces
US5855745A (en) * 1997-04-23 1999-01-05 Sierra Applied Sciences, Inc. Plasma processing system utilizing combined anode/ ion source
US6095085A (en) * 1998-08-20 2000-08-01 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
JP3668079B2 (ja) * 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
JP2001135851A (ja) * 1999-11-05 2001-05-18 Minolta Co Ltd 光電変換素子および固体撮像装置
DE10047042C2 (de) * 2000-09-22 2002-08-01 Forschungszentrum Juelich Gmbh Verfahren und Vorrichtung zur Herstellung von wasserstoffhaltigen Si¶1¶¶-¶¶x¶C¶x¶:H-Schichten
US6576564B2 (en) 2000-12-07 2003-06-10 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
US6930041B2 (en) * 2000-12-07 2005-08-16 Micron Technology, Inc. Photo-assisted method for semiconductor fabrication
US7043133B2 (en) * 2001-07-12 2006-05-09 Little Optics, Inc. Silicon-oxycarbide high index contrast, low-loss optical waveguides and integrated thermo-optic devices
TWI253478B (en) * 2001-11-14 2006-04-21 Mitsubishi Heavy Ind Ltd Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
US7659209B2 (en) * 2001-11-14 2010-02-09 Canon Anelva Corporation Barrier metal film production method
JP4449293B2 (ja) * 2001-12-19 2010-04-14 株式会社ニコン 成膜装置、及び光学部材の製造方法
NL1019781C2 (nl) * 2002-01-18 2003-07-21 Tno Deklaag alsmede werkwijzen en inrichtingen voor de vervaardiging daarvan.
JP3872363B2 (ja) * 2002-03-12 2007-01-24 京セラ株式会社 Ｃａｔ−ＰＥＣＶＤ法
EP1361437A1 (en) * 2002-05-07 2003-11-12 Centre National De La Recherche Scientifique (Cnrs) A novel biological cancer marker and methods for determining the cancerous or non-cancerous phenotype of cells
CN1278874C (zh) * 2002-05-08 2006-10-11 雷恩哈德库兹两合公司 装饰三维的大的塑料物体的方法
US7465362B2 (en) * 2002-05-08 2008-12-16 Btu International, Inc. Plasma-assisted nitrogen surface-treatment
AU2003230266B2 (en) * 2002-05-08 2008-03-13 Btu International, Inc. Plasma catalyst
US20060233682A1 (en) * 2002-05-08 2006-10-19 Cherian Kuruvilla A Plasma-assisted engine exhaust treatment
US7638727B2 (en) * 2002-05-08 2009-12-29 Btu International Inc. Plasma-assisted heat treatment
US7494904B2 (en) * 2002-05-08 2009-02-24 Btu International, Inc. Plasma-assisted doping
US20060057016A1 (en) * 2002-05-08 2006-03-16 Devendra Kumar Plasma-assisted sintering
US20060237398A1 (en) * 2002-05-08 2006-10-26 Dougherty Mike L Sr Plasma-assisted processing in a manufacturing line
US7560657B2 (en) * 2002-05-08 2009-07-14 Btu International Inc. Plasma-assisted processing in a manufacturing line
US7445817B2 (en) * 2002-05-08 2008-11-04 Btu International Inc. Plasma-assisted formation of carbon structures
US20060062930A1 (en) * 2002-05-08 2006-03-23 Devendra Kumar Plasma-assisted carburizing
US20060228497A1 (en) * 2002-05-08 2006-10-12 Satyendra Kumar Plasma-assisted coating
US7497922B2 (en) * 2002-05-08 2009-03-03 Btu International, Inc. Plasma-assisted gas production
US20050233091A1 (en) * 2002-05-08 2005-10-20 Devendra Kumar Plasma-assisted coating
US7498066B2 (en) * 2002-05-08 2009-03-03 Btu International Inc. Plasma-assisted enhanced coating
US20040129223A1 (en) * 2002-12-24 2004-07-08 Park Jong Hyurk Apparatus and method for manufacturing silicon nanodot film for light emission
JP4447469B2 (ja) * 2002-12-27 2010-04-07 株式会社日立国際電気 プラズマ発生装置、オゾン発生装置、基板処理装置、及び半導体デバイスの製造方法
WO2006127037A2 (en) * 2004-11-05 2006-11-30 Dana Corporation Atmospheric pressure processing using microwave-generated plasmas
FR2896807B1 (fr) * 2006-01-30 2008-03-14 Eads Ccr Groupement D Interet Structure multicouche mince, piece la comprenant et son procede de depot
DE102008064134B4 (de) * 2008-12-19 2016-07-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Beschichtung von Gegenständen mittels eines Niederdruckplasmas
JP5231308B2 (ja) * 2009-03-31 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US10211310B2 (en) 2012-06-12 2019-02-19 Novellus Systems, Inc. Remote plasma based deposition of SiOC class of films
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US9337068B2 (en) 2012-12-18 2016-05-10 Lam Research Corporation Oxygen-containing ceramic hard masks and associated wet-cleans
US10297442B2 (en) 2013-05-31 2019-05-21 Lam Research Corporation Remote plasma based deposition of graded or multi-layered silicon carbide film
US9371579B2 (en) * 2013-10-24 2016-06-21 Lam Research Corporation Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
US11154903B2 (en) * 2016-05-13 2021-10-26 Jiangsu Favored Nanotechnology Co., Ltd. Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization
US10002787B2 (en) 2016-11-23 2018-06-19 Lam Research Corporation Staircase encapsulation in 3D NAND fabrication
US9837270B1 (en) 2016-12-16 2017-12-05 Lam Research Corporation Densification of silicon carbide film using remote plasma treatment
US10840087B2 (en) 2018-07-20 2020-11-17 Lam Research Corporation Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films
KR20220056249A (ko) 2018-10-19 2022-05-04 램 리써치 코포레이션 갭 충진 (gapfill) 을 위한 도핑되거나 도핑되지 않은 실리콘 카바이드 증착 및 원격 수소 플라즈마 노출

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU86376A1 (ru) * 1950-01-06 1950-11-30 И.М. Сирота Трансформатор тока нулевой последовательности
SU863716A1 (ru) * 1979-08-08 1981-09-15 Московский авиационный технологический институт им.К.Э.Циолковского Устройство дл нанесени покрытий
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
JPH06105597B2 (ja) * 1982-08-30 1994-12-21 株式会社日立製作所 マイクロ波プラズマ源
JPS59148326A (ja) * 1983-02-14 1984-08-25 Sumitomo Electric Ind Ltd Ｃｖｄ薄膜製造方法
JPS59159167A (ja) * 1983-03-01 1984-09-08 Zenko Hirose アモルフアスシリコン膜の形成方法
JPS6126774A (ja) * 1984-07-16 1986-02-06 Canon Inc 非晶質シリコン膜形成装置
US4717585A (en) * 1985-02-09 1988-01-05 Canon Kabushiki Kaisha Process for forming deposited film
US4772486A (en) * 1985-02-18 1988-09-20 Canon Kabushiki Kaisha Process for forming a deposited film
US4818563A (en) * 1985-02-21 1989-04-04 Canon Kabushiki Kaisha Process for forming deposited film
JPH07101751B2 (ja) * 1985-03-28 1995-11-01 キヤノン株式会社 光起電力素子の製造方法
JPS61231716A (ja) * 1985-04-08 1986-10-16 Hitachi Ltd 成膜装置
US4777103A (en) * 1985-10-30 1988-10-11 Fujitsu Limited Electrophotographic multi-layered photosensitive member having a top protective layer of hydrogenated amorphous silicon carbide and method for fabricating the same
JPH084071B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 堆積膜形成法
JPH084072B2 (ja) * 1986-01-14 1996-01-17 キヤノン株式会社 堆積膜形成法
EP0241317B1 (en) * 1986-04-11 1993-03-10 Canon Kabushiki Kaisha Process for forming deposited film
JPS63152119A (ja) * 1986-12-16 1988-06-24 Fujitsu Ltd 気相成長装置
US5269848A (en) * 1987-03-20 1993-12-14 Canon Kabushiki Kaisha Process for preparing a functional thin film by way of the chemical reaction among active species and apparatus therefor
US4913929A (en) * 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
JP2552140B2 (ja) * 1987-07-03 1996-11-06 新日本無線株式会社 プラズマ発生反応装置
JPS6424094A (en) * 1987-07-21 1989-01-26 Nat Inst Res Inorganic Mat Synthesizing apparatus for diamond
JP2547032B2 (ja) * 1987-07-29 1996-10-23 富士通株式会社 水素化非晶質Ｃ−Ｓｉ膜の形成方法
JP2561129B2 (ja) * 1988-06-07 1996-12-04 富士通株式会社 薄膜形成装置
US5180436A (en) * 1988-07-26 1993-01-19 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
KR940003787B1 (ko) * 1988-09-14 1994-05-03 후지쓰 가부시끼가이샤 박막 형성장치 및 방법
US5178905A (en) * 1988-11-24 1993-01-12 Canon Kabushiki Kaisha Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state
WO1990012126A1 (en) * 1989-03-31 1990-10-18 Canon Kabushiki Kaisha Method of forming polycrystalline film by chemical vapor deposition
JPH04326725A (ja) * 1991-04-26 1992-11-16 Tokyo Electron Ltd プラズマ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100358131B1 (ko) * 1995-12-29 2003-01-29 주식회사 하이닉스반도체 열산화막형성을위한방법및장치

Also Published As

Publication number Publication date
EP0359264A2 (en) 1990-03-21
EP0359264B1 (en) 1994-05-04
KR940003787B1 (ko) 1994-05-03
DE68915088T2 (de) 1994-08-18
US5122431A (en) 1992-06-16
EP0359264A3 (en) 1990-11-14
US5522343A (en) 1996-06-04
US5447816A (en) 1995-09-05
DE68915088D1 (de) 1994-06-09
US5741364A (en) 1998-04-21

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