KR890016655A - 반도체장치의 확산장벽구조 및 그의 형성방법 - Google Patents
반도체장치의 확산장벽구조 및 그의 형성방법Info
- Publication number
- KR890016655A KR890016655A KR1019890005055A KR890005055A KR890016655A KR 890016655 A KR890016655 A KR 890016655A KR 1019890005055 A KR1019890005055 A KR 1019890005055A KR 890005055 A KR890005055 A KR 890005055A KR 890016655 A KR890016655 A KR 890016655A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- formation method
- diffusion barrier
- barrier structure
- diffusion
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000009792 diffusion process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76859—After-treatment introducing at least one additional element into the layer by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-97762 | 1988-04-20 | ||
JP9776288 | 1988-04-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890016655A true KR890016655A (ko) | 1989-11-29 |
KR920007783B1 KR920007783B1 (ko) | 1992-09-17 |
Family
ID=14200881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890005055A KR920007783B1 (ko) | 1988-04-20 | 1989-04-18 | 반도체장치의 확산장벽구조 및 그의 형성방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4990997A (ko) |
EP (1) | EP0338467B1 (ko) |
KR (1) | KR920007783B1 (ko) |
DE (1) | DE68909090T2 (ko) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3783405T2 (de) * | 1986-08-19 | 1993-08-05 | Fujitsu Ltd | Halbleiteranordnung mit einer duennschicht-verdrahtung und verfahren zum herstellen derselben. |
US5175608A (en) * | 1987-06-30 | 1992-12-29 | Hitachi, Ltd. | Method of and apparatus for sputtering, and integrated circuit device |
US4998157A (en) * | 1988-08-06 | 1991-03-05 | Seiko Epson Corporation | Ohmic contact to silicon substrate |
JPH07109829B2 (ja) * | 1989-11-20 | 1995-11-22 | 三菱電機株式会社 | 半導体装置の製造方法 |
KR930002672B1 (ko) * | 1990-06-29 | 1993-04-07 | 삼성전자 주식회사 | 비정질 질화티타늄막을 이용한 금속배선 형성방법 |
KR920005242A (ko) * | 1990-08-20 | 1992-03-28 | 김광호 | 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법 |
US5136362A (en) * | 1990-11-27 | 1992-08-04 | Grief Malcolm K | Electrical contact with diffusion barrier |
KR100214036B1 (ko) * | 1991-02-19 | 1999-08-02 | 이데이 노부유끼 | 알루미늄계 배선형성방법 |
EP0517288B1 (en) * | 1991-04-29 | 1996-04-10 | Koninklijke Philips Electronics N.V. | Diffusion barrier enhancement in metallization structure for semiconductor device fabrication |
JPH05109715A (ja) * | 1991-10-16 | 1993-04-30 | Nec Corp | 半導体装置の製造方法 |
US5231306A (en) * | 1992-01-31 | 1993-07-27 | Micron Technology, Inc. | Titanium/aluminum/nitrogen material for semiconductor devices |
US5723382A (en) * | 1992-06-12 | 1998-03-03 | Sandhu; Gurtej S. | Method of making a low-resistance contact to silicon having a titanium silicide interface, an amorphous titanium nitride barrier layer and a conductive plug |
US6081034A (en) * | 1992-06-12 | 2000-06-27 | Micron Technology, Inc. | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer |
JP3201061B2 (ja) * | 1993-03-05 | 2001-08-20 | ソニー株式会社 | 配線構造の製造方法 |
US5604140A (en) * | 1995-05-22 | 1997-02-18 | Lg Semicon, Co. Ltd. | Method for forming fine titanium nitride film and method for fabricating semiconductor element using the same |
US5736192A (en) * | 1995-07-05 | 1998-04-07 | Fujitsu Limited | Embedded electroconductive layer and method for formation thereof |
US6891269B1 (en) * | 1995-07-05 | 2005-05-10 | Fujitsu Limited | Embedded electroconductive layer structure |
KR100243286B1 (ko) * | 1997-03-05 | 2000-03-02 | 윤종용 | 반도체 장치의 제조방법 |
GB2324882B (en) * | 1997-04-29 | 2001-05-23 | Daewoo Electronics Co Ltd | Array of thin film actuated mirrors and method for the manufacture thereof |
KR19990003495A (ko) * | 1997-06-25 | 1999-01-15 | 김영환 | 반도체 소자의 베리어 금속층 형성방법 |
US6156647A (en) * | 1997-10-27 | 2000-12-05 | Applied Materials, Inc. | Barrier layer structure which prevents migration of silicon into an adjacent metallic layer and the method of fabrication of the barrier layer |
US6002174A (en) * | 1997-12-31 | 1999-12-14 | Micron Technology, Inc. | Barrier materials for semiconductor devices |
US6331811B2 (en) * | 1998-06-12 | 2001-12-18 | Nec Corporation | Thin-film resistor, wiring substrate, and method for manufacturing the same |
US6236113B1 (en) * | 1999-03-05 | 2001-05-22 | Sharp Laboratories Of America, Inc. | Iridium composite barrier structure and method for same |
JP3473485B2 (ja) * | 1999-04-08 | 2003-12-02 | 日本電気株式会社 | 薄膜抵抗体およびその製造方法 |
US6498397B1 (en) * | 2000-11-06 | 2002-12-24 | Advanced Micro Devices, Inc. | Seed layer with annealed region for integrated circuit interconnects |
KR100543655B1 (ko) * | 2003-06-30 | 2006-01-20 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
KR100917823B1 (ko) * | 2007-12-28 | 2009-09-18 | 주식회사 동부하이텍 | 반도체 소자의 금속 배선 형성 방법 |
US20160104669A1 (en) * | 2014-10-08 | 2016-04-14 | Infineon Technologies Ag | Semiconductor structure with improved metallization adhesion and method for manufacturing the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6066465A (ja) * | 1983-09-21 | 1985-04-16 | Seiko Epson Corp | 半導体装置 |
JPS60119755A (ja) * | 1983-12-01 | 1985-06-27 | Nec Corp | 多層配線半導体集積回路装置 |
US4829363A (en) * | 1984-04-13 | 1989-05-09 | Fairchild Camera And Instrument Corp. | Structure for inhibiting dopant out-diffusion |
JPS61156872A (ja) * | 1984-12-28 | 1986-07-16 | Fujitsu Ltd | 半導体装置 |
JPS61256766A (ja) * | 1985-05-10 | 1986-11-14 | Hitachi Ltd | 化合物半導体用電極 |
US4702967A (en) * | 1986-06-16 | 1987-10-27 | Harris Corporation | Multiple-layer, multiple-phase titanium/nitrogen adhesion/diffusion barrier layer structure for gold-base microcircuit interconnection |
-
1989
- 1989-04-14 US US07/337,999 patent/US4990997A/en not_active Expired - Lifetime
- 1989-04-18 EP EP89106792A patent/EP0338467B1/en not_active Expired - Lifetime
- 1989-04-18 DE DE89106792T patent/DE68909090T2/de not_active Expired - Fee Related
- 1989-04-18 KR KR1019890005055A patent/KR920007783B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0338467B1 (en) | 1993-09-15 |
US4990997A (en) | 1991-02-05 |
KR920007783B1 (ko) | 1992-09-17 |
DE68909090T2 (de) | 1994-01-13 |
DE68909090D1 (de) | 1993-10-21 |
EP0338467A1 (en) | 1989-10-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20040910 Year of fee payment: 13 |
|
LAPS | Lapse due to unpaid annual fee |