KR910010691A - 반도체장치의 배선접촉구조 및 그 제조방법 - Google Patents

반도체장치의 배선접촉구조 및 그 제조방법

Info

Publication number
KR910010691A
KR910010691A KR1019900017341A KR900017341A KR910010691A KR 910010691 A KR910010691 A KR 910010691A KR 1019900017341 A KR1019900017341 A KR 1019900017341A KR 900017341 A KR900017341 A KR 900017341A KR 910010691 A KR910010691 A KR 910010691A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
contact structure
wiring contact
wiring
Prior art date
Application number
KR1019900017341A
Other languages
English (en)
Other versions
KR930009016B1 (ko
Inventor
가오루 모도나미
가쓰미 스이조
Original Assignee
미쓰비시 뎅끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅끼 가부시끼가이샤 filed Critical 미쓰비시 뎅끼 가부시끼가이샤
Publication of KR910010691A publication Critical patent/KR910010691A/ko
Application granted granted Critical
Publication of KR930009016B1 publication Critical patent/KR930009016B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
KR1019900017341A 1989-11-14 1990-10-29 반도체장치의 배선접촉구조 및 그 제조방법 KR930009016B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP296832 1989-11-14
JP29683289 1989-11-14

Publications (2)

Publication Number Publication Date
KR910010691A true KR910010691A (ko) 1991-06-29
KR930009016B1 KR930009016B1 (ko) 1993-09-18

Family

ID=17838736

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900017341A KR930009016B1 (ko) 1989-11-14 1990-10-29 반도체장치의 배선접촉구조 및 그 제조방법

Country Status (3)

Country Link
US (1) US5309023A (ko)
JP (1) JP2585140B2 (ko)
KR (1) KR930009016B1 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995003629A1 (fr) * 1993-07-26 1995-02-02 Seiko Epson Corporation Dispositif semi-conducteur a film mince, sa fabrication et son systeme d'affichage
US5578873A (en) * 1994-10-12 1996-11-26 Micron Technology, Inc. Integrated circuitry having a thin film polysilicon layer in ohmic contact with a conductive layer
DE69533823D1 (de) * 1994-12-29 2005-01-05 St Microelectronics Inc Elektrische Verbindungsstruktur auf einer integrierten Schaltungsanordnung mit einem Zapfen mit vergrössertem Kopf
JPH0917863A (ja) * 1995-06-29 1997-01-17 Rohm Co Ltd 半導体装置および半導体装置の配線方法
JPH09153545A (ja) * 1995-09-29 1997-06-10 Toshiba Corp 半導体装置及びその製造方法
US5730835A (en) * 1996-01-31 1998-03-24 Micron Technology, Inc. Facet etch for improved step coverage of integrated circuit contacts
US5646061A (en) * 1996-04-22 1997-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. Two-layer polysilicon process for forming a stacked DRAM capacitor with improved doping uniformity and a controllable shallow junction contact
US5929526A (en) * 1997-06-05 1999-07-27 Micron Technology, Inc. Removal of metal cusp for improved contact fill
US6048763A (en) * 1997-08-21 2000-04-11 Micron Technology, Inc. Integrated capacitor bottom electrode with etch stop layer
US6010935A (en) * 1997-08-21 2000-01-04 Micron Technology, Inc. Self aligned contacts
US5920763A (en) * 1997-08-21 1999-07-06 Micron Technology, Inc. Method and apparatus for improving the structural integrity of stacked capacitors
TW402809B (en) * 1997-10-18 2000-08-21 United Microelectronics Corp The manufacture method of electrical charge storage structure
US6274486B1 (en) 1998-09-02 2001-08-14 Micron Technology, Inc. Metal contact and process
US6423626B1 (en) 1998-11-02 2002-07-23 Micron Technology, Inc. Removal of metal cusp for improved contact fill
US6406954B1 (en) * 1999-09-02 2002-06-18 Micron Technology, Inc. Method for forming out-diffusing a dopant from the doped polysilicon into the N-type and P-type doped portion
JP2003115535A (ja) * 2001-10-04 2003-04-18 Hitachi Ltd 半導体集積回路装置
KR20100043470A (ko) * 2008-10-20 2010-04-29 주식회사 하이닉스반도체 상변화 메모리 소자의 하부 전극 콘택 구조 및 그 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186323A (en) * 1981-05-11 1982-11-16 Seiko Epson Corp Semiconductor device
JPS5923544A (ja) * 1982-07-30 1984-02-07 Toshiba Corp 半導体装置の製造方法
US4507853A (en) 1982-08-23 1985-04-02 Texas Instruments Incorporated Metallization process for integrated circuits
JPS5939049A (ja) * 1982-08-27 1984-03-03 Fujitsu Ltd 半導体装置
JPS6053080A (ja) * 1983-09-02 1985-03-26 Hitachi Ltd 半導体集積回路装置
JPS62118525A (ja) * 1985-11-19 1987-05-29 Matsushita Electronics Corp 半導体装置の製造方法
JPS63273363A (ja) * 1987-04-30 1988-11-10 Nec Corp 半導体装置の製造方法
US4967254A (en) * 1987-07-16 1990-10-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP2905500B2 (ja) * 1988-07-27 1999-06-14 三菱電機株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
KR930009016B1 (ko) 1993-09-18
JP2585140B2 (ja) 1997-02-26
US5309023A (en) 1994-05-03
JPH03218626A (ja) 1991-09-26

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