IT8722659A0 - Dispositivo semiconduttore e metodo di fabbricazione dello stesso. - Google Patents

Dispositivo semiconduttore e metodo di fabbricazione dello stesso.

Info

Publication number
IT8722659A0
IT8722659A0 IT8722659A IT2265987A IT8722659A0 IT 8722659 A0 IT8722659 A0 IT 8722659A0 IT 8722659 A IT8722659 A IT 8722659A IT 2265987 A IT2265987 A IT 2265987A IT 8722659 A0 IT8722659 A0 IT 8722659A0
Authority
IT
Italy
Prior art keywords
manufacture
semiconductor device
semiconductor
Prior art date
Application number
IT8722659A
Other languages
English (en)
Other versions
IT1223135B (it
Inventor
Ronald Keith Smeltzer
Alvin Malcolm Goodman
Geroge Luther Schnable
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8722659A0 publication Critical patent/IT8722659A0/it
Application granted granted Critical
Publication of IT1223135B publication Critical patent/IT1223135B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface
IT22659/87A 1986-12-09 1987-11-17 Dispositivo semiconduttore e metodo di fabbricazione dello stesso IT1223135B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/939,688 US4766482A (en) 1986-12-09 1986-12-09 Semiconductor device and method of making the same

Publications (2)

Publication Number Publication Date
IT8722659A0 true IT8722659A0 (it) 1987-11-17
IT1223135B IT1223135B (it) 1990-09-12

Family

ID=25473570

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22659/87A IT1223135B (it) 1986-12-09 1987-11-17 Dispositivo semiconduttore e metodo di fabbricazione dello stesso

Country Status (5)

Country Link
US (1) US4766482A (it)
JP (1) JPS63174355A (it)
FR (1) FR2607965A1 (it)
GB (1) GB2198584B (it)
IT (1) IT1223135B (it)

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JP2579979B2 (ja) * 1987-02-26 1997-02-12 株式会社東芝 半導体素子の製造方法
JPH07107935B2 (ja) * 1988-02-04 1995-11-15 株式会社東芝 半導体装置
US4876583A (en) * 1988-03-21 1989-10-24 The United States Of America As Represented By The Secretary Of The Air Force Radiation-induced substrate photo-current compensation apparatus
US4873563A (en) * 1988-05-02 1989-10-10 Synectics, Inc. Solid state monolithic switching device
US4950618A (en) * 1989-04-14 1990-08-21 Texas Instruments, Incorporated Masking scheme for silicon dioxide mesa formation
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
US5027177A (en) * 1989-07-24 1991-06-25 Hughes Aircraft Company Floating base lateral bipolar phototransistor with field effect gate voltage control
US4996575A (en) * 1989-08-29 1991-02-26 David Sarnoff Research Center, Inc. Low leakage silicon-on-insulator CMOS structure and method of making same
US5449953A (en) * 1990-09-14 1995-09-12 Westinghouse Electric Corporation Monolithic microwave integrated circuit on high resistivity silicon
US5104818A (en) * 1991-04-15 1992-04-14 United Technologies Corporation Preimplanted N-channel SOI mesa
KR940006273A (ko) * 1992-06-20 1994-03-23 오가 노리오 스태틱램(sram) 장치 및 그 제조방법
EP0622834A3 (en) * 1993-04-30 1998-02-11 International Business Machines Corporation Method to prevent latch-up and improve breakdown voltage in SOI MOSFETS
US5864162A (en) * 1993-07-12 1999-01-26 Peregrine Seimconductor Corporation Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire
US5973363A (en) * 1993-07-12 1999-10-26 Peregrine Semiconductor Corp. CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator
US5572040A (en) * 1993-07-12 1996-11-05 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
US5416043A (en) * 1993-07-12 1995-05-16 Peregrine Semiconductor Corporation Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer
US5930638A (en) * 1993-07-12 1999-07-27 Peregrine Semiconductor Corp. Method of making a low parasitic resistor on ultrathin silicon on insulator
US5863823A (en) * 1993-07-12 1999-01-26 Peregrine Semiconductor Corporation Self-aligned edge control in silicon on insulator
KR0175000B1 (ko) * 1994-12-14 1999-02-01 윤종용 전자파 억제구조를 갖는 반도체 소자
SE515867C2 (sv) * 1995-04-13 2001-10-22 Ericsson Telefon Ab L M Bipolär SOI-transistor
US6043555A (en) * 1995-04-13 2000-03-28 Telefonaktiebolget Lm Ericsson Bipolar silicon-on-insulator transistor with increased breakdown voltage
US5795813A (en) * 1996-05-31 1998-08-18 The United States Of America As Represented By The Secretary Of The Navy Radiation-hardening of SOI by ion implantation into the buried oxide layer
US6025611A (en) * 1996-09-20 2000-02-15 The Board Of Regents Of The University Of Nebraska Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
GB9726094D0 (en) * 1997-12-10 1998-02-11 Philips Electronics Nv Thin film transistors and electronic devices comprising such
GB2358079B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor
US7411250B2 (en) * 2001-04-05 2008-08-12 Peregrine Semiconductor Corporation Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
US6974720B2 (en) * 2003-10-16 2005-12-13 Cree, Inc. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
US20050257834A1 (en) * 2004-05-20 2005-11-24 Johnson Oriz W Freeze-free air hose coupling
US7322015B2 (en) * 2005-01-05 2008-01-22 Honeywell Internatinal Inc. Simulating a dose rate event in a circuit design
US7795679B2 (en) * 2008-07-24 2010-09-14 International Business Machines Corporation Device structures with a self-aligned damage layer and methods for forming such device structures
TWM409527U (en) * 2011-02-23 2011-08-11 Azurewave Technologies Inc Forming integrated circuit module

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DE2344320C2 (de) * 1973-09-03 1975-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Kompensation von Grenzflächenladungen bei epitaktisch auf ein Substrat aufgewachsenen Siliziumdünnschichten
US4183134A (en) * 1977-02-15 1980-01-15 Westinghouse Electric Corp. High yield processing for silicon-on-sapphire CMOS integrated circuits
US4135951A (en) * 1977-06-13 1979-01-23 Monsanto Company Annealing method to increase minority carrier life-time for neutron transmutation doped semiconductor materials
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
US4203780A (en) * 1978-08-23 1980-05-20 Sony Corporation Fe Ion implantation into semiconductor substrate for reduced lifetime sensitivity to temperature
JPS5827663B2 (ja) * 1979-06-04 1983-06-10 富士通株式会社 半導体装置の製造方法
JPS56112743A (en) * 1980-02-12 1981-09-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Thin film semiconductor device and manufacture thereof
US4328610A (en) * 1980-04-25 1982-05-11 Burroughs Corporation Method of reducing alpha-particle induced errors in an integrated circuit
JPS5799779A (en) * 1980-12-12 1982-06-21 Citizen Watch Co Ltd Thin-film transistor
JPS5799778A (en) * 1980-12-12 1982-06-21 Citizen Watch Co Ltd Thin-film transistor
JPS57210635A (en) * 1981-06-19 1982-12-24 Tokyo Daigaku Manufacture of semiconductor device
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
JPS58151064A (ja) * 1983-01-10 1983-09-08 Nec Corp Ｓｏｓ型半導体装置
JPS59159563A (ja) * 1983-03-02 1984-09-10 Toshiba Corp 半導体装置の製造方法
EP0130457A1 (de) * 1983-07-01 1985-01-09 Hahn-Meitner-Institut Berlin Gesellschaft mit beschränkter Haftung Halbleiter-Bauelement mit mindestens einem pn-Übergang und mit in der Tiefe der Basisschicht scharf lokalisierten Ionen, Verfahren zu dessen Herstellung und seine Verwendung

Also Published As

Publication number Publication date
JPS63174355A (ja) 1988-07-18
GB2198584B (en) 1990-05-09
US4766482A (en) 1988-08-23
IT1223135B (it) 1990-09-12
FR2607965A1 (fr) 1988-06-10
GB2198584A (en) 1988-06-15
GB8728344D0 (en) 1988-01-06

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