KR890012386A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법

Info

Publication number
KR890012386A
KR890012386A KR1019890000349A KR890000349A KR890012386A KR 890012386 A KR890012386 A KR 890012386A KR 1019890000349 A KR1019890000349 A KR 1019890000349A KR 890000349 A KR890000349 A KR 890000349A KR 890012386 A KR890012386 A KR 890012386A
Authority
KR
South Korea
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
KR1019890000349A
Other languages
English (en)
Other versions
KR930003859B1 (ko
Inventor
히데이치 가와구치
요시다카 츠나시마
기쿠오 야마베
가츠야 오쿠무라
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR890012386A publication Critical patent/KR890012386A/ko
Application granted granted Critical
Publication of KR930003859B1 publication Critical patent/KR930003859B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019890000349A 1988-01-14 1989-01-14 반도체장치의 제조방법 KR930003859B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63004883A JP2694957B2 (ja) 1988-01-14 1988-01-14 半導体装置の製造方法
JP88-4883 1988-01-19

Publications (2)

Publication Number Publication Date
KR890012386A true KR890012386A (ko) 1989-08-26
KR930003859B1 KR930003859B1 (ko) 1993-05-14

Family

ID=11596076

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890000349A KR930003859B1 (ko) 1988-01-14 1989-01-14 반도체장치의 제조방법

Country Status (2)

Country Link
JP (1) JP2694957B2 (ko)
KR (1) KR930003859B1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003303274A1 (en) * 2002-12-20 2004-07-14 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device
JP2011527124A (ja) * 2008-07-06 2011-10-20 アイメック 半導体構造のドープ方法およびその半導体デバイス

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54103671A (en) * 1978-02-01 1979-08-15 Nec Corp Production of semiconductor device
JPS57118633A (en) * 1981-01-14 1982-07-23 Toshiba Corp Manufacture of semiconductor device
JPS61127119A (ja) * 1984-11-22 1986-06-14 Sanyo Electric Co Ltd シリコン結晶の成長方法
JPS62219915A (ja) * 1986-03-20 1987-09-28 Fuji Electric Co Ltd 半導体基板の処理装置
JPH0821552B2 (ja) * 1986-05-12 1996-03-04 ソニー株式会社 不純物ド−ピング法

Also Published As

Publication number Publication date
KR930003859B1 (ko) 1993-05-14
JPH01186615A (ja) 1989-07-26
JP2694957B2 (ja) 1997-12-24

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