JP2694957B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JP2694957B2 JP2694957B2 JP63004883A JP488388A JP2694957B2 JP 2694957 B2 JP2694957 B2 JP 2694957B2 JP 63004883 A JP63004883 A JP 63004883A JP 488388 A JP488388 A JP 488388A JP 2694957 B2 JP2694957 B2 JP 2694957B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- semiconductor substrate
- layer
- forming
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 41
- 238000000034 method Methods 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims description 38
- 150000001875 compounds Chemical class 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 238000001179 sorption measurement Methods 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000000354 decomposition reaction Methods 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 34
- 238000009792 diffusion process Methods 0.000 description 21
- 239000003990 capacitor Substances 0.000 description 18
- 239000010408 film Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63004883A JP2694957B2 (ja) | 1988-01-14 | 1988-01-14 | 半導体装置の製造方法 |
| KR1019890000349A KR930003859B1 (ko) | 1988-01-14 | 1989-01-14 | 반도체장치의 제조방법 |
| US08/017,449 US5354710A (en) | 1988-01-14 | 1993-02-12 | Method of manufacturing semiconductor devices using an adsorption enhancement layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63004883A JP2694957B2 (ja) | 1988-01-14 | 1988-01-14 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01186615A JPH01186615A (ja) | 1989-07-26 |
| JP2694957B2 true JP2694957B2 (ja) | 1997-12-24 |
Family
ID=11596076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63004883A Expired - Fee Related JP2694957B2 (ja) | 1988-01-14 | 1988-01-14 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2694957B2 (ko) |
| KR (1) | KR930003859B1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE443925T1 (de) * | 2002-12-20 | 2009-10-15 | Nxp Bv | Verfahren zur herstellung eines halbleiterbauelements |
| WO2010003928A2 (en) * | 2008-07-06 | 2010-01-14 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Method for doping semiconductor structures and the semiconductor device thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54103671A (en) * | 1978-02-01 | 1979-08-15 | Nec Corp | Production of semiconductor device |
| JPS57118633A (en) * | 1981-01-14 | 1982-07-23 | Toshiba Corp | Manufacture of semiconductor device |
| JPS61127119A (ja) * | 1984-11-22 | 1986-06-14 | Sanyo Electric Co Ltd | シリコン結晶の成長方法 |
| JPS62219915A (ja) * | 1986-03-20 | 1987-09-28 | Fuji Electric Co Ltd | 半導体基板の処理装置 |
| JPH0821552B2 (ja) * | 1986-05-12 | 1996-03-04 | ソニー株式会社 | 不純物ド−ピング法 |
-
1988
- 1988-01-14 JP JP63004883A patent/JP2694957B2/ja not_active Expired - Fee Related
-
1989
- 1989-01-14 KR KR1019890000349A patent/KR930003859B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR930003859B1 (ko) | 1993-05-14 |
| JPH01186615A (ja) | 1989-07-26 |
| KR890012386A (ko) | 1989-08-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |