KR890011109A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR890011109A
KR890011109A KR1019880016970A KR880016970A KR890011109A KR 890011109 A KR890011109 A KR 890011109A KR 1019880016970 A KR1019880016970 A KR 1019880016970A KR 880016970 A KR880016970 A KR 880016970A KR 890011109 A KR890011109 A KR 890011109A
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KR
South Korea
Prior art keywords
band
anode
semiconductor device
high resistivity
lattice defect
Prior art date
Application number
KR1019880016970A
Other languages
English (en)
Other versions
KR910009035B1 (ko
Inventor
가즈시 도미이
도시로오 아베
다꾸야 고모다
Original Assignee
미요시 도시오
마쓰시다 덴꼬오 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62322336A external-priority patent/JP2617497B2/ja
Priority claimed from JP63100603A external-priority patent/JPH0671078B2/ja
Application filed by 미요시 도시오, 마쓰시다 덴꼬오 가부시끼가이샤 filed Critical 미요시 도시오
Publication of KR890011109A publication Critical patent/KR890011109A/ko
Application granted granted Critical
Publication of KR910009035B1 publication Critical patent/KR910009035B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 스태틱 유도형 다이리스터로서 본 발명의 일실시예 반도체 장치의 단면도.
제2a도는 제1도 반도체 장치의 격자결함분포와 불순물분포를 보여주는 도.
제2b도는 격자결함대가 애노드대 외각에 위치된 경우에 비교 반도체 장치의 격자결함분포와 불순물분포를 보여주는 도.

Claims (6)

  1. 장치의 일측에 형성되며 고불순물 농도대를 갖는 애노드대, 장치의 반대편에 형성되며 고불순물 농도대를 갖는 캐소드대, 애노드대와 캐소드대 사이를 형성되며 전류로로서 동작을 하는 저불순물 농도대를 갖는 높은 고유저항대, 및 캐리어 수명을 짧게 하는 상대적으로 저농도의 애노드대내에 있는 격자결함대로 구성되는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 격자결함대는 상기 애노드대 내에 높은 고유저항대에 근접하여 형성되는 것이 특징인 반도체 장치.
  3. 제1항에 있어서, 더욱이 애노드대와 근접하여 위치된 높은 고유저항대내에 형성되며, 높은 고유저항대와 동일한 도전형으로 구성되고 높은 고유저항대 보다 상대적으로 더 높은 동노를 갖는 버퍼대를 더 포함하는 것이 특징인 반도체 장치.
  4. 제2항에 있어서, 격자결함대는 양자조사에 의해 애노드대에 형성되며, 결함분포의 피크가 애노드대내측에 위치하는 것이 특징인 반도체 장치.
  5. 제4항에 있어서, 양자조사 유속량은 1x1012cm-2와 3x1012cm-2사이인 것이 특징인 반도체 장치.
  6. 제1항에 있어서, 격자결함대 밀도는 도전 및 턴오프 전력손실의 합이 최소인 결함밀도의 1.5 내지 2.0배인 것이 특징인 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880016970A 1987-12-18 1988-12-19 반도체 장치 KR910009035B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP62322336A JP2617497B2 (ja) 1987-12-18 1987-12-18 半導体装置
JP62-322336 1987-12-18
JP63100603A JPH0671078B2 (ja) 1988-04-23 1988-04-23 半導体装置
JP63-100603 1988-04-23

Publications (2)

Publication Number Publication Date
KR890011109A true KR890011109A (ko) 1989-08-12
KR910009035B1 KR910009035B1 (ko) 1991-10-28

Family

ID=26441599

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880016970A KR910009035B1 (ko) 1987-12-18 1988-12-19 반도체 장치

Country Status (6)

Country Link
US (1) US5075751A (ko)
KR (1) KR910009035B1 (ko)
AU (1) AU595735B2 (ko)
DE (1) DE3842468C3 (ko)
FR (1) FR2625043B1 (ko)
GB (1) GB2213988B (ko)

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US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
JPH03171777A (ja) * 1989-11-30 1991-07-25 Toshiba Corp 半導体装置
US5554883A (en) * 1990-04-28 1996-09-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method therefor
US5289031A (en) * 1990-08-21 1994-02-22 Kabushiki Kaisha Toshiba Semiconductor device capable of blocking contaminants
JPH0575110A (ja) * 1991-09-13 1993-03-26 Fuji Electric Co Ltd 半導体装置
US5654210A (en) * 1994-09-13 1997-08-05 Lsi Logic Corporation Process for making group IV semiconductor substrate treated with one or more group IV elements to form one or more barrier regions capable of inhibiting migration of dopant materials in substrate
US5858864A (en) * 1994-09-13 1999-01-12 Lsi Logic Corporation Process for making group IV semiconductor substrate treated with one or more group IV elements to form barrier region capable of inhibiting migration of dopant materials in substrate
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Also Published As

Publication number Publication date
AU2676488A (en) 1989-08-03
FR2625043A1 (fr) 1989-06-23
GB2213988B (en) 1992-02-05
DE3842468C2 (ko) 1993-04-08
DE3842468C3 (de) 1998-03-26
AU595735B2 (en) 1990-04-05
GB8828659D0 (en) 1989-01-11
KR910009035B1 (ko) 1991-10-28
DE3842468A1 (de) 1989-06-29
FR2625043B1 (fr) 1994-02-18
GB2213988A (en) 1989-08-23
US5075751A (en) 1991-12-24

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