JP5505498B2 - 半導体装置とその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 148
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 230000007547 defect Effects 0.000 claims description 68
- 239000013078 crystal Substances 0.000 claims description 66
- 239000002245 particle Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 41
- 230000001678 irradiating effect Effects 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 395
- 239000012535 impurity Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H—ELECTRICITY
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- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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Description
図1に示す半導体装置10は、IGBTと還流ダイオードが同一の半導体基板100に形成されたRC−IGBTである。
半導体装置10のドリフト層を製造する工程を一例を挙げて説明する。なお、半導体装置10のその他の構成については説明を省略するが、従来公知の製造方法を用いて製造することが可能であることは当業者であれば理解できる。
図4〜図6は、プレドリフト層510を形成する工程を示している。図4に示すように、第3プレドリフト層513として、n型の半導体ウェハを準備する。図4に示すn型のウェハの厚さは、第3プレドリフト層513の厚さに略等しい。
図7,8は荷電粒子を照射する工程を示している。図7は、プレドリフト層510を形成した後に、さらに、表面電極141および裏面電極142を除く半導体基板100の表面側および裏面側の構造を形成した後の状態を示している。
上記に説明した実施例において、第2プレドリフト層512は、比抵抗が一定である定抵抗領域を含むように形成されてもよい。すなわち、アニール処理前の段階では、プレドリフト層510は、図9の細い破線13に示すような比抵抗の分布を有するものであってもよい。第2プレドリフト層512の比抵抗は、アニール処理前には、細い破線13に示すように比抵抗が一定である定抵抗領域を含むものであってもよい。また、この場合、定抵抗領域の比抵抗は、第2プレドリフト層512の比抵抗の最小値であってもよい。なお、図9の細い破線13に示す比抵抗分布を有するプレドリフト層510にアニール処理を行うと、図9の破線12に示す曲線状の比抵抗分布を有するプレドリフト層510に変化する。上記で説明した、第2プレドリフト層512をエピタキシャル法で形成する方法では、細い破線13のような比抵抗が一定である定抵抗領域を有する第2プレドリフト層512を容易に形成することが可能である。
図10〜図12は、プレドリフト層610を形成する工程を示している。図10に示すように、第3プレドリフト層613として、n型の半導体ウェハを準備する。なお、図10に示すn型の半導体ウェハの厚さは、プレドリフト層形成工程終了後の第3プレドリフト層613の厚さよりも厚い。
Claims (4)
- 半導体基板に形成された第1導電型のドリフト層と、
ドリフト層の表面側に位置し、半導体基板の表面に形成された第2導電型のボディ層と、を有しており、
ドリフト層は、ライフタイム制御領域を有しており、
ライフタイム制御領域は、半導体基板の深さ方向に変化するドリフト層の結晶欠陥密度の極大値をhとした場合に、結晶欠陥密度がh/2以上となる領域であり、第1抵抗層と、第1抵抗層よりも比抵抗が低い第2抵抗層とを含む第1導電型のプレドリフト層に荷電粒子を照射することによって形成され、
ライフタイム制御領域の少なくとも一部は、第2抵抗層の範囲内に形成され、
第1抵抗層は、プレドリフト層に荷電粒子を照射する際に、荷電粒子が通過しない第3抵抗層と、荷電粒子が通過する第4抵抗層を備えており、
第3抵抗層は、第2抵抗層の表面又は裏面の一方側に配置され、第4抵抗層は、第2抵抗層の表面又は裏面の他方側に配置されており、
第4抵抗層の比抵抗は、第3抵抗層の比抵抗よりも低い、半導体装置。 - 第2抵抗層は、エピタキシャル層である、請求項1に記載の半導体装置。
- 半導体基板に形成された第1導電型のドリフト層と、
ドリフト層の表面側に位置し、半導体基板の表面に形成された第2導電型のボディ層と、を有しており、
ドリフト層は、半導体基板の深さ方向に変化するドリフト層の結晶欠陥密度の極大値をhとした場合に、結晶欠陥密度がh/2以上である、ライフタイム制御領域を有する半導体装置の製造方法であって、
ドリフト層を製造する工程は、
第1抵抗層と、第1抵抗層よりも比抵抗が低い第2抵抗層とを含む第1導電型のプレドリフト層を形成する工程と、
ライフタイム制御領域の少なくとも一部が第2抵抗層に含まれるように、プレドリフト層に荷電粒子を照射する工程とを含んでおり、
第1抵抗層は、第3抵抗層と、第3抵抗層よりも比抵抗が低い第4抵抗層を有しており、
プレドリフト層を形成する工程では、第2抵抗層は、第3抵抗層と第4抵抗層との間に形成され、
荷電粒子を照射する工程では、荷電粒子は、第4抵抗層側からプレドリフト層に照射され、第4抵抗層を通過するとともに第3抵抗層を通過しない、半導体装置の製造方法。 - 第2抵抗層は、エピタキシャル法によって形成する、請求項3に記載の半導体装置の製造方法。
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PCT/JP2011/063137 WO2012169022A1 (ja) | 2011-06-08 | 2011-06-08 | 半導体装置とその製造方法 |
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JP5505498B2 true JP5505498B2 (ja) | 2014-05-28 |
JPWO2012169022A1 JPWO2012169022A1 (ja) | 2015-02-23 |
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US (1) | US20140077253A1 (ja) |
EP (1) | EP2720254B1 (ja) |
JP (1) | JP5505498B2 (ja) |
CN (1) | CN103392224A (ja) |
WO (1) | WO2012169022A1 (ja) |
Families Citing this family (14)
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JP6024751B2 (ja) * | 2012-07-18 | 2016-11-16 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
DE112013002031T5 (de) * | 2012-08-22 | 2015-03-12 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Halbleitervorrichtungsherstellungsverfahren |
JP6181597B2 (ja) * | 2014-04-28 | 2017-08-16 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6185511B2 (ja) * | 2015-05-26 | 2017-08-23 | トヨタ自動車株式会社 | 半導体装置 |
JP6514035B2 (ja) * | 2015-05-27 | 2019-05-15 | 株式会社豊田中央研究所 | 半導体装置 |
CN107086217B (zh) * | 2016-02-16 | 2023-05-16 | 富士电机株式会社 | 半导体装置 |
JP6787690B2 (ja) * | 2016-05-19 | 2020-11-18 | ローム株式会社 | 高速ダイオード及びその製造方法 |
TWI607563B (zh) * | 2017-04-21 | 2017-12-01 | Maxpower Semiconductor Inc | With a thin bottom emitter layer and in the trenches in the shielded area and the termination ring Incoming dopant vertical power transistors |
JP7102948B2 (ja) * | 2017-10-26 | 2022-07-20 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
US11183387B2 (en) * | 2018-04-11 | 2021-11-23 | Mitsubishi Electric Corporation | Semiconductor device, semiconductor wafer and method for manufacturing semiconductor device |
US20200105874A1 (en) | 2018-10-01 | 2020-04-02 | Ipower Semiconductor | Back side dopant activation in field stop igbt |
JP7363336B2 (ja) * | 2019-10-11 | 2023-10-18 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7528628B2 (ja) * | 2020-08-20 | 2024-08-06 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN114639607B (zh) * | 2022-03-16 | 2023-05-26 | 江苏东海半导体股份有限公司 | Mos器件的形成方法 |
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- 2011-06-08 CN CN2011800683169A patent/CN103392224A/zh active Pending
- 2011-06-08 US US13/695,749 patent/US20140077253A1/en not_active Abandoned
- 2011-06-08 EP EP11867376.3A patent/EP2720254B1/en not_active Not-in-force
- 2011-06-08 JP JP2012508844A patent/JP5505498B2/ja active Active
- 2011-06-08 WO PCT/JP2011/063137 patent/WO2012169022A1/ja active Application Filing
Patent Citations (5)
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JP2001077357A (ja) * | 1999-08-31 | 2001-03-23 | Toshiba Corp | 半導体装置 |
JP2002093813A (ja) * | 2000-09-13 | 2002-03-29 | Toyota Motor Corp | 半導体装置の製造方法 |
WO2007055352A1 (ja) * | 2005-11-14 | 2007-05-18 | Fuji Electric Device Technology Co., Ltd. | 半導体装置およびその製造方法 |
JP2008135439A (ja) * | 2006-11-27 | 2008-06-12 | Toyota Motor Corp | バイポーラ半導体装置とその製造方法 |
JP2008171952A (ja) * | 2007-01-10 | 2008-07-24 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
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EP2720254B1 (en) | 2019-04-24 |
US20140077253A1 (en) | 2014-03-20 |
CN103392224A (zh) | 2013-11-13 |
EP2720254A1 (en) | 2014-04-16 |
EP2720254A4 (en) | 2014-11-26 |
WO2012169022A1 (ja) | 2012-12-13 |
JPWO2012169022A1 (ja) | 2015-02-23 |
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