KR890008822A - 반도체메모리 - Google Patents

반도체메모리 Download PDF

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Publication number
KR890008822A
KR890008822A KR1019880014366A KR880014366A KR890008822A KR 890008822 A KR890008822 A KR 890008822A KR 1019880014366 A KR1019880014366 A KR 1019880014366A KR 880014366 A KR880014366 A KR 880014366A KR 890008822 A KR890008822 A KR 890008822A
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KR
South Korea
Prior art keywords
redundant
column
line
data
circuit
Prior art date
Application number
KR1019880014366A
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English (en)
Other versions
KR910009436B1 (ko
Inventor
히로시 사하라
하루키 토다
시게오 오시마
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR890008822A publication Critical patent/KR890008822A/ko
Application granted granted Critical
Publication of KR910009436B1 publication Critical patent/KR910009436B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

내용 없음

Description

반도체메모리
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예인 열방향직렬억세스메모리의 내부회로구성도.

Claims (2)

  1. 열방향의 직렬억세스기능을 갖춘 반도체메모리에 있어서, 시프트레지스터로 구성된 열선택회로 (21∼24)와, n개 열로 이루어진 정규열(51∼54), 열선택게이트(11∼14)를 매개하여 접속되는 정규데이터선(D,), 불량열을 치환하기 위한 용장열(55), 이 용장열(55)과 용장열선택게이크(15)를 매개하여 접속되는 용장데이터선(SD,), 불량열의 어드레스를 검출하여 용장열선택게이트(15)를 활성화시키기 위한 불량어드레스검출회로(43), 이 불량어드레스검출회로(43)전용의 어드레스카운터회로(42), 용장열선택회로(25) 및, 상기 용장열(55)선택시에 데이터의 입출력구동회로(31)와 접속되는 데이터선을 정규데이터선(D,)으로부터 용장데이터선(SD,)으로 절환하기 위한 용장데이터선 선택회로(44)를 갖추어 구성된 것을 특징으로 하는 반도체메모리.
  2. 제1항에 있어서, 상기 시스템의 열이 비트선쌍 또는 데이터레지스터인 것을 특징으로 하는 반도체메모리.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880014366A 1987-11-02 1988-11-02 반도체메모리 KR910009436B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-278045 1987-11-02
JP62278045A JPH01119995A (ja) 1987-11-02 1987-11-02 半導体メモリ
JP278045 1987-11-02

Publications (2)

Publication Number Publication Date
KR890008822A true KR890008822A (ko) 1989-07-12
KR910009436B1 KR910009436B1 (ko) 1991-11-16

Family

ID=17591878

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880014366A KR910009436B1 (ko) 1987-11-02 1988-11-02 반도체메모리

Country Status (5)

Country Link
US (2) US4951253A (ko)
EP (1) EP0315157B1 (ko)
JP (1) JPH01119995A (ko)
KR (1) KR910009436B1 (ko)
DE (1) DE3855363T2 (ko)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01119995A (ja) * 1987-11-02 1989-05-12 Toshiba Corp 半導体メモリ
EP0389203A3 (en) * 1989-03-20 1993-05-26 Fujitsu Limited Semiconductor memory device having information indicative of presence of defective memory cells
KR910005601B1 (ko) * 1989-05-24 1991-07-31 삼성전자주식회사 리던던트 블럭을 가지는 반도체 메모리장치
JP2900451B2 (ja) * 1989-11-30 1999-06-02 ソニー株式会社 メモリ装置
FR2655763B1 (fr) * 1989-12-11 1992-01-17 Sgs Thomson Microelectronics Circuit de redondance pour memoire.
JP2575919B2 (ja) * 1990-03-22 1997-01-29 株式会社東芝 半導体記憶装置の冗長回路
GB9007796D0 (en) * 1990-04-06 1990-06-06 Foss Richard C Dynamic memory row/column redundancy scheme
JPH04103099A (ja) * 1990-08-23 1992-04-06 Toshiba Corp 半導体記憶装置
JP2721931B2 (ja) * 1990-09-28 1998-03-04 三菱電機株式会社 半導体メモリのためのシリアル選択回路
KR940008208B1 (ko) * 1990-12-22 1994-09-08 삼성전자주식회사 반도체 메모리장치의 리던던트 장치 및 방법
US5255227A (en) * 1991-02-06 1993-10-19 Hewlett-Packard Company Switched row/column memory redundancy
US5293564A (en) * 1991-04-30 1994-03-08 Texas Instruments Incorporated Address match scheme for DRAM redundancy scheme
JP2888034B2 (ja) * 1991-06-27 1999-05-10 日本電気株式会社 半導体メモリ装置
JP2689768B2 (ja) * 1991-07-08 1997-12-10 日本電気株式会社 半導体集積回路装置
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
JP2923114B2 (ja) * 1992-02-18 1999-07-26 株式会社沖マイクロデザイン宮崎 冗長デコーダ回路
US5508963A (en) * 1993-03-12 1996-04-16 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
KR100186277B1 (ko) * 1994-09-09 1999-05-15 사또오 후미오 반도체 메모리
US5568433A (en) * 1995-06-19 1996-10-22 International Business Machines Corporation Memory array having redundant word line
JPH09147600A (ja) * 1995-11-29 1997-06-06 Advantest Corp 半導体試験用救済アドレス解析方式
US5841709A (en) * 1995-12-29 1998-11-24 Stmicroelectronics, Inc. Memory having and method for testing redundant memory cells
US5790462A (en) * 1995-12-29 1998-08-04 Sgs-Thomson Microelectronics, Inc. Redundancy control
US5771195A (en) * 1995-12-29 1998-06-23 Sgs-Thomson Microelectronics, Inc. Circuit and method for replacing a defective memory cell with a redundant memory cell
US5612918A (en) * 1995-12-29 1997-03-18 Sgs-Thomson Microelectronics, Inc. Redundancy architecture
US6037799A (en) * 1995-12-29 2000-03-14 Stmicroelectronics, Inc. Circuit and method for selecting a signal
US5920513A (en) * 1997-08-22 1999-07-06 Micron Technology, Inc. Partial replacement of partially defective memory devices
JP2013246855A (ja) * 2012-05-28 2013-12-09 Toshiba Corp 半導体メモリ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3071955D1 (en) * 1979-06-15 1987-05-27 Fujitsu Ltd Semiconductor memory device
JPS6120300A (ja) * 1984-07-09 1986-01-29 Hitachi Ltd 欠陥救済回路を有する半導体メモリ
JPS6148200A (ja) * 1984-08-14 1986-03-08 Fujitsu Ltd 半導体記憶装置
US4719601A (en) * 1986-05-02 1988-01-12 International Business Machine Corporation Column redundancy for two port random access memory
JPS6413300A (en) * 1987-07-06 1989-01-18 Nec Corp Redundancy circuit for serial read/write memory
JPH01119995A (ja) * 1987-11-02 1989-05-12 Toshiba Corp 半導体メモリ

Also Published As

Publication number Publication date
JPH01119995A (ja) 1989-05-12
EP0315157B1 (en) 1996-06-12
US4951253A (en) 1990-08-21
DE3855363T2 (de) 1996-11-21
US5107464A (en) 1992-04-21
DE3855363D1 (de) 1996-07-18
EP0315157A2 (en) 1989-05-10
EP0315157A3 (en) 1991-01-09
KR910009436B1 (ko) 1991-11-16

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