KR850004684A - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR850004684A
KR850004684A KR1019840007504A KR840007504A KR850004684A KR 850004684 A KR850004684 A KR 850004684A KR 1019840007504 A KR1019840007504 A KR 1019840007504A KR 840007504 A KR840007504 A KR 840007504A KR 850004684 A KR850004684 A KR 850004684A
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KR
South Korea
Prior art keywords
semiconductor memory
memory
circuits
coupled
memory array
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Application number
KR1019840007504A
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English (en)
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KR920010560B1 (ko
Inventor
레즈로우 마즈보도
Original Assignee
미쯔다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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Publication of KR850004684A publication Critical patent/KR850004684A/ko
Application granted granted Critical
Publication of KR920010560B1 publication Critical patent/KR920010560B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Data Exchanges In Wide-Area Networks (AREA)

Abstract

내용 없음

Description

반도체 기억 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 1실시예를 도시한 회로도.
제3도는 그 데이터 출력 버퍼와 데이터 입력 버퍼 DIB1 내지 DIB4 및 타이밍 발생회로 TG의 일부의 1실시예를 도시한 불록 도면.
제4도는 제3도의 회로 불록 R1 및 W1의 구체적인 회로도.

Claims (5)

  1. 다음 사항으로 되는 반도체 메모리 메모리 어레이, 상기 메모리 어레이에 결합 되어야할 다수개의 호출회로, 컬럼 어드레스 스트로우브 신호의 과도 변화를 검출하는 것에 의해서 타이밍 신호를 형성하는 타이밍 발생회로, 그리고, 상기 타이밍 신호를 받는 것에 의해서, 상기 다수개의 호출 회로를 차례로 동작시키는 제어 신호를 출력하는 제어 회로로 된다.
  2. 특허 청구의 범위 제1항의 반도체 메모리에 있어서, 상기 제어 회로는, 상기 타이밍 신호를 쉬프트 펄스로서 받는 쉬프트 레지스터로 된다.
  3. 특허 청구의 범위 제1항의 반도체 메모리에 있어서, 상기 메모리 어레이는, 매트릭스로 배치된 다수개의 다이나믹형 메모리 셀, 각 다이나믹형 메모리 셀의 선택 단자에 결합된 다수개의 데이터선, 그리고 각 다이나믹형 메모리 셀의 데이터 입출력 단자에 결합된 다수개의 데이터선으로 된다.
  4. 특허 청구의 범위 제3항의 반도체 메모리에 있어서, 상기 다수개의 호출 회로의 출력 단자는, 서로가 공통으로 접속 되어 있다.
  5. 특허 청구의 범위 제4항에 있어서 반도체 메모리는 또, 상기 메모리 어레이에 결합되어야할 다수 개의 기억 회로로 되고, 상기 기억 회로는, 상기 쉬프트 레지스터에서 출력되는 제어 신호에 의해서 차례로 동작 된다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840007504A 1983-12-23 1984-11-29 반도체 기억장치 KR920010560B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP58-241966 1983-12-23
JP58241966A JPS60136086A (ja) 1983-12-23 1983-12-23 半導体記憶装置
JP83-241966 1983-12-23

Publications (2)

Publication Number Publication Date
KR850004684A true KR850004684A (ko) 1985-07-25
KR920010560B1 KR920010560B1 (ko) 1992-12-05

Family

ID=17082224

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840007504A KR920010560B1 (ko) 1983-12-23 1984-11-29 반도체 기억장치

Country Status (4)

Country Link
US (1) US4875192A (ko)
JP (1) JPS60136086A (ko)
KR (1) KR920010560B1 (ko)
GB (1) GB2152777A (ko)

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JPS63257193A (ja) * 1987-04-13 1988-10-25 日本特殊陶業株式会社 点火プラグ
JP2569554B2 (ja) * 1987-05-13 1997-01-08 三菱電機株式会社 ダイナミツクｒａｍ
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Also Published As

Publication number Publication date
GB8431762D0 (en) 1985-01-30
US4875192A (en) 1989-10-17
GB2152777A (en) 1985-08-07
KR920010560B1 (ko) 1992-12-05
JPH0546040B2 (ko) 1993-07-12
JPS60136086A (ja) 1985-07-19

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