KR880700475A - 태양 전지 - Google Patents

태양 전지

Info

Publication number
KR880700475A
KR880700475A KR870700498A KR870700498A KR880700475A KR 880700475 A KR880700475 A KR 880700475A KR 870700498 A KR870700498 A KR 870700498A KR 870700498 A KR870700498 A KR 870700498A KR 880700475 A KR880700475 A KR 880700475A
Authority
KR
South Korea
Prior art keywords
pct
charge carriers
ohmic contact
semiconductive substrate
contact zones
Prior art date
Application number
KR870700498A
Other languages
English (en)
Other versions
KR940010161B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR880700475A publication Critical patent/KR880700475A/ko
Application granted granted Critical
Publication of KR940010161B1 publication Critical patent/KR940010161B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electromechanical Clocks (AREA)
KR1019870700498A 1985-10-11 1986-10-08 태양 전지 KR940010161B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DEP3536299.5 1985-10-11
DE19853536299 DE3536299A1 (de) 1985-10-11 1985-10-11 Solarzelle aus silizium
PCT/EP1986/000573 WO1987002513A1 (fr) 1985-10-11 1986-10-08 Cellule solaire

Publications (2)

Publication Number Publication Date
KR880700475A true KR880700475A (ko) 1988-03-15
KR940010161B1 KR940010161B1 (ko) 1994-10-22

Family

ID=6283352

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870700498A KR940010161B1 (ko) 1985-10-11 1986-10-08 태양 전지

Country Status (18)

Country Link
US (2) US4828628A (ko)
EP (1) EP0219763B1 (ko)
JP (1) JPS63501668A (ko)
KR (1) KR940010161B1 (ko)
AT (1) ATE64240T1 (ko)
AU (1) AU590803B2 (ko)
BR (1) BR8606917A (ko)
DE (3) DE3536299A1 (ko)
DZ (1) DZ996A1 (ko)
EG (1) EG17560A (ko)
ES (1) ES2023360B3 (ko)
GR (1) GR3002657T3 (ko)
IL (1) IL80278A0 (ko)
IN (1) IN164598B (ko)
MA (1) MA20789A1 (ko)
MX (1) MX171858B (ko)
TN (1) TNSN86141A1 (ko)
WO (1) WO1987002513A1 (ko)

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DE3712503A1 (de) * 1987-04-13 1988-11-03 Nukem Gmbh Solarzelle
DE3725346A1 (de) * 1987-07-30 1989-02-09 Nukem Gmbh Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle
US5215599A (en) * 1991-05-03 1993-06-01 Electric Power Research Institute Advanced solar cell
US5320684A (en) * 1992-05-27 1994-06-14 Mobil Solar Energy Corporation Solar cell and method of making same
KR100416741B1 (ko) * 1997-03-31 2004-05-17 삼성전자주식회사 후면 부분소결형 실리콘 태양전지
GB2325081B (en) * 1997-05-06 2000-01-26 Simage Oy Semiconductor imaging device
US20060021648A1 (en) * 1997-05-09 2006-02-02 Parise Ronald J Device and method to transmit waste heat or thermal pollution into deep space
US5936193A (en) * 1997-05-09 1999-08-10 Parise; Ronald J. Nighttime solar cell
DE19729522C2 (de) * 1997-07-10 2001-11-08 Dirk Koenig Anordnung zum Aufbau einer Solarzelle für polykristalline oder amorphe Halbleiter
JPH11103079A (ja) * 1997-09-26 1999-04-13 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
US6774300B2 (en) * 2001-04-27 2004-08-10 Adrena, Inc. Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure
US7659475B2 (en) * 2003-06-20 2010-02-09 Imec Method for backside surface passivation of solar cells and solar cells with such passivation
JP4232597B2 (ja) 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
DE102005026176B3 (de) * 2005-06-06 2007-01-04 Universität Konstanz Verfahren zur flächigen Kontaktierung von Halbleiterbauelementen mit reduzierter Durchbiegung sowie entsprechendes Halbleiterbauelement und Herstellungsvorrichtung
JP4837662B2 (ja) * 2005-06-22 2011-12-14 京セラ株式会社 太陽電池素子の製造方法
EP1949450B1 (en) * 2005-11-08 2015-01-21 LG Electronics Inc. Solar cell of high efficiency
CN101548392A (zh) * 2006-12-01 2009-09-30 夏普株式会社 太阳能电池及其制造方法
KR100974220B1 (ko) * 2006-12-13 2010-08-06 엘지전자 주식회사 태양전지
JP5219538B2 (ja) * 2008-02-12 2013-06-26 大成建設株式会社 太陽光発電薄膜を基材に直接形成した太陽電池
KR100953448B1 (ko) * 2008-04-02 2010-04-20 한국기계연구원 반도체 나노소재를 이용한 광전 변환 장치 및 그 제조 방법
JP2010539727A (ja) * 2008-04-17 2010-12-16 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法
EP2304803A1 (en) * 2008-06-11 2011-04-06 Solar Implant Technologies Inc. Solar cell fabrication using implantation
US20110162703A1 (en) * 2009-03-20 2011-07-07 Solar Implant Technologies, Inc. Advanced high efficientcy crystalline solar cell fabrication method
JP5334645B2 (ja) * 2009-03-31 2013-11-06 富士フイルム株式会社 可撓性太陽電池モジュール
JP2010283339A (ja) * 2009-05-02 2010-12-16 Semiconductor Energy Lab Co Ltd 光電変換装置及びその作製方法
DE102009024807B3 (de) * 2009-06-02 2010-10-07 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Solarzelle mit benachbarten elektrisch isolierenden Passivierbereichen mit hoher Oberflächenladung gegensätzlicher Polarität und Herstellungsverfahren
KR101139458B1 (ko) * 2009-06-18 2012-04-30 엘지전자 주식회사 태양전지 및 그 제조방법
KR101032624B1 (ko) * 2009-06-22 2011-05-06 엘지전자 주식회사 태양 전지 및 그 제조 방법
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US20110041910A1 (en) * 2009-08-18 2011-02-24 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
TWI497730B (zh) * 2009-10-20 2015-08-21 Iner Aec Executive Yuan 一種薄膜光伏裝置及其製造方法
KR20110062598A (ko) * 2009-12-03 2011-06-10 삼성전자주식회사 적층막 제조방법, 이를 이용한 태양전지의 제조방법
TW201123480A (en) * 2009-12-29 2011-07-01 Auria Solar Co Ltd Solar cell structure and manufacturing method thereof
US20110272024A1 (en) * 2010-04-13 2011-11-10 Applied Materials, Inc. MULTI-LAYER SiN FOR FUNCTIONAL AND OPTICAL GRADED ARC LAYERS ON CRYSTALLINE SOLAR CELLS
US8686283B2 (en) 2010-05-04 2014-04-01 Silevo, Inc. Solar cell with oxide tunneling junctions
KR101203623B1 (ko) * 2010-06-18 2012-11-21 엘지전자 주식회사 태양 전지 및 그 제조 방법
US20120060918A1 (en) * 2010-08-16 2012-03-15 Spitzer Mark B Energy conversion device for photovoltaic cells
US20120048376A1 (en) * 2010-08-30 2012-03-01 Alexander Shkolnik Silicon-based photovoltaic device produced by essentially electrical means
US20120073650A1 (en) * 2010-09-24 2012-03-29 David Smith Method of fabricating an emitter region of a solar cell
KR101258938B1 (ko) * 2011-07-25 2013-05-07 엘지전자 주식회사 태양 전지
WO2013070978A2 (en) 2011-11-08 2013-05-16 Intevac, Inc. Substrate processing system and method
US20150340528A1 (en) * 2012-12-10 2015-11-26 Alliance For Sustainable Energy, Llc Monolithic tandem voltage-matched multijuntion solar cells
WO2014100506A1 (en) 2012-12-19 2014-06-26 Intevac, Inc. Grid for plasma ion implant
WO2014206504A1 (de) 2013-06-26 2014-12-31 Universität Konstanz Verfahren und vorrichtung zum herstellen eines photovoltaikelements mit stabilisiertem wirkungsgrad
US9466755B2 (en) * 2014-10-30 2016-10-11 International Business Machines Corporation MIS-IL silicon solar cell with passivation layer to induce surface inversion
JP2017033970A (ja) * 2015-07-29 2017-02-09 京セラ株式会社 太陽電池素子およびその製造方法

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JPS5839074A (ja) * 1981-08-31 1983-03-07 Mitsubishi Electric Corp 太陽電池の製造方法
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CA1209681A (en) * 1982-08-04 1986-08-12 Exxon Research And Engineering Company Optically enhanced thin film photovoltaic device using lithography defined random surfaces
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Also Published As

Publication number Publication date
BR8606917A (pt) 1987-11-03
DE3690520D2 (en) 1987-11-19
DE3536299A1 (de) 1987-04-16
AU590803B2 (en) 1989-11-16
DE3679629D1 (de) 1991-07-11
AU6475886A (en) 1987-05-05
ES2023360B3 (es) 1992-01-16
GR3002657T3 (en) 1993-01-25
US4828628A (en) 1989-05-09
EP0219763A1 (de) 1987-04-29
EG17560A (en) 1990-10-30
EP0219763B1 (de) 1991-06-05
JPS63501668A (ja) 1988-06-23
KR940010161B1 (ko) 1994-10-22
IN164598B (ko) 1989-04-15
IL80278A0 (en) 1987-01-30
DZ996A1 (fr) 2004-09-13
TNSN86141A1 (fr) 1990-01-01
MA20789A1 (fr) 1987-07-01
US4900369A (en) 1990-02-13
MX171858B (es) 1993-11-22
ATE64240T1 (de) 1991-06-15
WO1987002513A1 (fr) 1987-04-23

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A201 Request for examination
E902 Notification of reason for refusal
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E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee