TW350096B - Novel cell topology for semiconductor power devices with shortened source width to achieve device ruggedness improvement - Google Patents

Novel cell topology for semiconductor power devices with shortened source width to achieve device ruggedness improvement

Info

Publication number
TW350096B
TW350096B TW085116312A TW85116312A TW350096B TW 350096 B TW350096 B TW 350096B TW 085116312 A TW085116312 A TW 085116312A TW 85116312 A TW85116312 A TW 85116312A TW 350096 B TW350096 B TW 350096B
Authority
TW
Taiwan
Prior art keywords
zone
contact
semiconductor power
novel cell
improvement
Prior art date
Application number
TW085116312A
Other languages
Chinese (zh)
Inventor
Koon-Chong So
True-Lon Lin
Yan-Man Tsui
Danny-Chi Nim
Fwu-Iuan Shieh
Tzuo-Shin Ma
Original Assignee
Magepower Taiwan Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Magepower Taiwan Corp filed Critical Magepower Taiwan Corp
Priority to TW085116312A priority Critical patent/TW350096B/en
Application granted granted Critical
Publication of TW350096B publication Critical patent/TW350096B/en

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A sort of novel cell topology for semiconductor power device, having a top and a base, including the main component mainly the following: a drain zone formed in the neighborhood of the base and with the first conductive dopants; a plurality of vertical components formed on top of the drain zone, including the vertical pn contact face, a low exterior zone, with the second conductive dopants; including the pn contact a drain pole formed in said low exterior zone and with the first conductive dopants, including he low exterior zone the source polarity and extending toward the top, for definition of area of the element; said vertical element including a source contact on top and adjacent to the center of the element; and the source zone in horizontal direction having a narrow line in the neighborhood of the outer circumference of the element, and a plurality of contact strips, extending inward from the narrow strips for contact with the source polarity.
TW085116312A 1996-12-31 1996-12-31 Novel cell topology for semiconductor power devices with shortened source width to achieve device ruggedness improvement TW350096B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085116312A TW350096B (en) 1996-12-31 1996-12-31 Novel cell topology for semiconductor power devices with shortened source width to achieve device ruggedness improvement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085116312A TW350096B (en) 1996-12-31 1996-12-31 Novel cell topology for semiconductor power devices with shortened source width to achieve device ruggedness improvement

Publications (1)

Publication Number Publication Date
TW350096B true TW350096B (en) 1999-01-11

Family

ID=57939885

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085116312A TW350096B (en) 1996-12-31 1996-12-31 Novel cell topology for semiconductor power devices with shortened source width to achieve device ruggedness improvement

Country Status (1)

Country Link
TW (1) TW350096B (en)

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