KR880700460A - 실리콘 집적회로 및 그 제조 공정 - Google Patents

실리콘 집적회로 및 그 제조 공정

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Publication number
KR880700460A
KR880700460A KR1019860700526A KR860700526A KR880700460A KR 880700460 A KR880700460 A KR 880700460A KR 1019860700526 A KR1019860700526 A KR 1019860700526A KR 860700526 A KR860700526 A KR 860700526A KR 880700460 A KR880700460 A KR 880700460A
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layer
distance
less
top surface
silicon dioxide
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KR1019860700526A
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KR960000378B1 (ko
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충 창 츄안
캉 대원
캄거 애비드
칼 파릴로 루이스
Original Assignee
마이클 와이.엡스타인
아메리칸 텔리폰 앤드 텔레그라프 캄파니
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Publication of KR880700460A publication Critical patent/KR880700460A/ko
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Publication of KR960000378B1 publication Critical patent/KR960000378B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

내용 없음

Description

실리콘 집적회로 및 그 제조 공정
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 내지 제 3 도는 본 발명의 한 실시예에 따르는 회로를 여러가지로 계속 제조하는 단계동안, MOS 트랜지스터를 포함 하는 집적회로의 한 부분에 대한 횡단면도를 예시.

Claims (7)

  1. 상부 표면 밑 하부 표면을 갖는 질화물 실리콘 이산화물층을 포함하는 집적 회로에 있어서, 층의 상부 표면에의 질소비는 0.13보다 크며, 상기 층에서 질소비는 상기 표면으로 부터 약 30옹스트롬 또는 그이하의 제 1 거리에서 약 0.13밑의 값으로 내려가고, 상기 상부 표면으로부터 약 두배의 제 1 거리 혹은 그 이하의 제 2 거리에서 약 0.05이하 값으로 내려가는 것을 특징으로 하는 실리콘 집적회로.
  2. 제 1 항에 있어서, 상기 층의 질소비는 상기 층의 상부 표면으로부터 제 2 거리에 위치한 상부 단부와 상기 층의 하부 표면으로 부터 약 20옹스트롬 또는 그이하의 제 3 거리에 위치한 하부 단부의 중간 영역 전체에서 0.05 이하로 머무른다는 것을 특징으로 하는 실리콘 집적회로.
  3. 제 2 항에 있어서, 질소비는 상기 층의 하부 표면에서 중간 영역의 하부 단부에 연장된 상기 층의 하부 영역에서는 더이상 0.15를 못 올라간다는 것을 특징으로 하는 실리콘 집적 회로.
  4. 제 1 항에 있어서, 질화물 실리콘 이산화물 층의 두께가 대략 50 내지 400옹스트롬의 범위내인 것을 특징으로 하는 실리콘 집적 회로.
  5. 상부 표면 및 하부 표면을 갖는 질화물 실리콘 이산화물 층을 형성하도록 실리콘 이산화물 층을 질화하는 것을 포함하는 집적 회로 제조 과정에 있어서, 상기 층의 주 표면이 질소를 포함하는 주변에 노출되는 동안 최소한 약 섭씨 1200도의 온도로 증가되게 하도록 실리콘 이산화물 층을 고속 열 어니일링 하는 단계와, 그것에 의하여 질화물 실리콘 이산화물 층에서 질소비는 상부 표면에 약 0.13을 웃도는 값에서 상기 상부 표면으로 부터 약 30옹스트롬 또는 그이하의 제 1 거리에서 약 0.13 이하 값으로 내려가고, 또 상기 상부 표면으로부터 약 60옹스트롬 또는 그 이하의 제 2 거리에 약 0.05 이값으로 내려가는 것을 특징으로 하는 실리콘 집적 회로 제조 공정.
  6. 제 5 항에 있어서, 주변이 암모니아인 것을 특징으로 하는 실리콘 집적회로 제조 공정.
  7. 제 6 항에 있어서, 반도체 본체 및 상승된 온도상에 위치한 실리콘 이산화물 층이 최소한 약 섭씨 1250도인 것을 특징으로 하는 실리콘 집적 회로 제조 공정.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860700526A 1984-12-05 1985-11-13 실리콘 집적회로 및 그 제조 공정 KR960000378B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US678569 1984-12-05
US678,569 1984-12-05
US06/678,569 US4623912A (en) 1984-12-05 1984-12-05 Nitrided silicon dioxide layers for semiconductor integrated circuits
PCT/US1985/002243 WO1986003621A1 (en) 1984-12-05 1985-11-13 Nitrided silicon dioxide layers for semiconductor integrated circuits

Publications (2)

Publication Number Publication Date
KR880700460A true KR880700460A (ko) 1988-03-15
KR960000378B1 KR960000378B1 (ko) 1996-01-05

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Country Link
US (1) US4623912A (ko)
EP (1) EP0205613B1 (ko)
JP (1) JP2568527B2 (ko)
KR (1) KR960000378B1 (ko)
CA (1) CA1260364A (ko)
DE (1) DE3578656D1 (ko)
ES (1) ES8801968A1 (ko)
IE (1) IE57207B1 (ko)
WO (1) WO1986003621A1 (ko)

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EP0205613A1 (en) 1986-12-30
EP0205613B1 (en) 1990-07-11
IE57207B1 (en) 1992-06-03
ES549560A0 (es) 1988-03-16
JPS62501184A (ja) 1987-05-07
CA1260364A (en) 1989-09-26
WO1986003621A1 (en) 1986-06-19
US4623912A (en) 1986-11-18
JP2568527B2 (ja) 1997-01-08
IE853050L (en) 1986-06-05
ES8801968A1 (es) 1988-03-16
DE3578656D1 (de) 1990-08-16
KR960000378B1 (ko) 1996-01-05

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