KR880012481A - 다이어몬드의 합성방법 및 합성장치 - Google Patents

다이어몬드의 합성방법 및 합성장치 Download PDF

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Publication number
KR880012481A
KR880012481A KR1019880004591A KR880004591A KR880012481A KR 880012481 A KR880012481 A KR 880012481A KR 1019880004591 A KR1019880004591 A KR 1019880004591A KR 880004591 A KR880004591 A KR 880004591A KR 880012481 A KR880012481 A KR 880012481A
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South Korea
Prior art keywords
diamond
synthesizing
substrate
hydrogen
contacting
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KR1019880004591A
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English (en)
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KR910008728B1 (ko
Inventor
토시미찌 이또오
마사아끼 노사카
이꾸오 호소야
Original Assignee
홍고오 므쯔미
이데미쯔세끼유가가꾸 가부시기가이샤
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27308868&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR880012481(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP62099118A external-priority patent/JPH0818905B2/ja
Priority claimed from JP10919387A external-priority patent/JPS63274692A/ja
Priority claimed from JP62301035A external-priority patent/JPH01141897A/ja
Application filed by 홍고오 므쯔미, 이데미쯔세끼유가가꾸 가부시기가이샤 filed Critical 홍고오 므쯔미
Publication of KR880012481A publication Critical patent/KR880012481A/ko
Priority to KR1019910008772A priority Critical patent/KR910008729B1/ko
Application granted granted Critical
Publication of KR910008728B1 publication Critical patent/KR910008728B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

다이어몬드의 합성방법 및 합성장치.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 (A)는, 본 발명 다이어몬드의 합성장치의 구성을 표시하는 개념도, 제1 도(B)는 동장치를 구성하는 플라즈마 발생장치의 일례를 도시하는 설명도.

Claims (7)

1산화탄소와 수소와의 합계에 대해서 1산화탄소가 1몰 % 이상이 되는 비율의 1 산화탄소와 수소를 여기해서 얻게되는 가스를, 기판에 접촉시키는 것을 특징으로 하는 다이어몬드의 합성방법.
수소에 대해서 2산화탄소가ㅏ 0.1-20몰 %가 되는 비율로 혼합된 2산화탄소와 수소를 여기해서 얻게 되는 가스를, 기판에 접촉시키는 것을 특징으로 하는 다이어몬드의 합성방법.
제 1 항 또는 제 2 항에 있어서, 상기 여기가 플라즈마 CVD법에 의해 행하여지는 것을 특징으로 하는 다이어몬드의 합성방법.
프라즈마 발생장치내에서, 마이크로파의 조사에 의해 수소가스와 탄소원가스로부터 얻게 된 플라즈마를, 기판표면에 접촉시키므로서, 기판표면에 다이어몬드를 석출시키는 다이어몬드의 합성방법에 있어서, 1기의 마이크로파 발진기로부터 발진한 마이크로파의 진행을 분기시키고, 분기한 각 마이크로파를 복수의 플라즈마 발생장치에 인도하도록 한 것을 특징으로 하는 다이어몬드 합성방법.
제 1,2항 또는 제 4 항에서, 기판이 실리콘 웨이퍼 인것을 특징으로 하는 다이어몬드의 합성방법.
제 1 항 또는 제 4 항에 있어서, 기판이 400~1,000oC로 가열되는 것을 특징으로 하는 다이어몬드의 합성방법.
마이크로파를 발진하는 마이크로파 발진기와, 이 마이크로파 발진기로부터 발진된 마이크로파의 진행을 복수의 방향으로 분기시키는 분기도파관과, 이 분기도판관에 접속됨과 동시에 다이어몬드 석출용의 기판을 각각 가진 복수의 플라즈마 발생장치를 구비해서 이루어지는 것을 특징으로 하는 다이어몬드 합성장치.
※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880004591A 1987-04-22 1988-04-22 다이어몬드의 합성방법 및 합성장치 KR910008728B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910008772A KR910008729B1 (ko) 1987-04-22 1991-05-29 다이어몬드의 합성방법

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP62099118A JPH0818905B2 (ja) 1987-04-22 1987-04-22 ダイヤモンドの合成方法および合成装置
JP62-99118 1987-04-22
JP62-109193 1987-05-02
JP10919387A JPS63274692A (ja) 1987-05-02 1987-05-02 ダイヤモンドの合成方法
JP62-301035 1987-11-28
JP62301035A JPH01141897A (ja) 1987-11-28 1987-11-28 ダイヤモンドの合成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1019910008772A Division KR910008729B1 (ko) 1987-04-22 1991-05-29 다이어몬드의 합성방법

Publications (2)

Publication Number Publication Date
KR880012481A true KR880012481A (ko) 1988-11-26
KR910008728B1 KR910008728B1 (ko) 1991-10-19

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ID=27308868

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KR1019880004591A KR910008728B1 (ko) 1987-04-22 1988-04-22 다이어몬드의 합성방법 및 합성장치

Country Status (6)

Country Link
US (2) US4985227A (ko)
EP (1) EP0288065B1 (ko)
KR (1) KR910008728B1 (ko)
CA (1) CA1327772C (ko)
DE (1) DE3884658T2 (ko)
NO (2) NO881723L (ko)

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Also Published As

Publication number Publication date
NO940494D0 (no) 1994-02-14
KR910008728B1 (ko) 1991-10-19
US4985227A (en) 1991-01-15
US4984534A (en) 1991-01-15
NO940494L (no) 1988-10-24
NO881723L (no) 1988-10-24
NO881723D0 (no) 1988-04-21
DE3884658D1 (de) 1993-11-11
EP0288065A3 (en) 1989-02-15
EP0288065A2 (en) 1988-10-26
DE3884658T2 (de) 1994-04-28
EP0288065B1 (en) 1993-10-06
CA1327772C (en) 1994-03-15

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