FR2849867B1 - Croissance diamant a grande vitesse par plasma micro-onde en regime pulse. - Google Patents

Croissance diamant a grande vitesse par plasma micro-onde en regime pulse.

Info

Publication number
FR2849867B1
FR2849867B1 FR0300254A FR0300254A FR2849867B1 FR 2849867 B1 FR2849867 B1 FR 2849867B1 FR 0300254 A FR0300254 A FR 0300254A FR 0300254 A FR0300254 A FR 0300254A FR 2849867 B1 FR2849867 B1 FR 2849867B1
Authority
FR
France
Prior art keywords
diamond growth
pulse regime
speed diamond
plasma microwave
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0300254A
Other languages
English (en)
Other versions
FR2849867A1 (fr
Inventor
Alix Gicquel
Francois Silva
Xavier Futen
Khaled Hassouni
Antoine Rousseau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite Sorbonne Paris Nord
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite Sorbonne Paris Nord
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0300254A priority Critical patent/FR2849867B1/fr
Application filed by Centre National de la Recherche Scientifique CNRS, Universite Sorbonne Paris Nord filed Critical Centre National de la Recherche Scientifique CNRS
Priority to PCT/EP2003/007142 priority patent/WO2004063430A1/fr
Priority to US10/541,970 priority patent/US7662441B2/en
Priority to EP03815047.0A priority patent/EP1581676B1/fr
Priority to JP2004565926A priority patent/JP4969780B2/ja
Priority to AU2003246370A priority patent/AU2003246370A1/en
Priority to CA2512731A priority patent/CA2512731C/fr
Publication of FR2849867A1 publication Critical patent/FR2849867A1/fr
Application granted granted Critical
Publication of FR2849867B1 publication Critical patent/FR2849867B1/fr
Priority to ZA200505095A priority patent/ZA200505095B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/103—Diamond-like carbon coating, i.e. DLC
    • Y10S427/106—Utilizing plasma, e.g. corona, glow discharge, cold plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
FR0300254A 2003-01-10 2003-01-10 Croissance diamant a grande vitesse par plasma micro-onde en regime pulse. Expired - Fee Related FR2849867B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0300254A FR2849867B1 (fr) 2003-01-10 2003-01-10 Croissance diamant a grande vitesse par plasma micro-onde en regime pulse.
US10/541,970 US7662441B2 (en) 2003-01-10 2003-06-18 High-speed diamond growth using a microwave plasma in pulsed mode
EP03815047.0A EP1581676B1 (fr) 2003-01-10 2003-06-18 Croissance de diamant a grande vitesse a l'aide de plasma micro-onde en mode pulse
JP2004565926A JP4969780B2 (ja) 2003-01-10 2003-06-18 パルスモードのマイクロ波プラズマを用いるダイヤモンドの高速成長
PCT/EP2003/007142 WO2004063430A1 (fr) 2003-01-10 2003-06-18 Croissance de diamant a grande vitesse a l'aide de plasma micro-onde en mode pulse
AU2003246370A AU2003246370A1 (en) 2003-01-10 2003-06-18 High-speed diamond growth using a microwave plasma in pulsed mode
CA2512731A CA2512731C (fr) 2003-01-10 2003-06-18 Croissance de diamant a grande vitesse a l'aide de plasma micro-onde en mode pulse
ZA200505095A ZA200505095B (en) 2003-01-10 2005-06-23 High-speed diamond growth using a microwave plasma in pulsed mode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0300254A FR2849867B1 (fr) 2003-01-10 2003-01-10 Croissance diamant a grande vitesse par plasma micro-onde en regime pulse.

Publications (2)

Publication Number Publication Date
FR2849867A1 FR2849867A1 (fr) 2004-07-16
FR2849867B1 true FR2849867B1 (fr) 2005-03-25

Family

ID=32524827

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0300254A Expired - Fee Related FR2849867B1 (fr) 2003-01-10 2003-01-10 Croissance diamant a grande vitesse par plasma micro-onde en regime pulse.

Country Status (8)

Country Link
US (1) US7662441B2 (fr)
EP (1) EP1581676B1 (fr)
JP (1) JP4969780B2 (fr)
AU (1) AU2003246370A1 (fr)
CA (1) CA2512731C (fr)
FR (1) FR2849867B1 (fr)
WO (1) WO2004063430A1 (fr)
ZA (1) ZA200505095B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006033280A1 (de) * 2006-07-18 2008-01-24 Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh Kompositzusammensetzung für mikrostrukturierte Schichten
RU2401883C2 (ru) * 2008-01-15 2010-10-20 Ретевосович Паносян Жозеф Способ нанесения алмазоподобной углеродной пленки на подложку из органического стекла
GB2476478A (en) 2009-12-22 2011-06-29 Element Six Ltd Chemical vapour deposition diamond synthesis
US10273598B2 (en) 2009-12-22 2019-04-30 Element Six Technologies Limited Synthetic CVD diamond
JP6775771B2 (ja) * 2015-09-10 2020-10-28 国立研究開発法人産業技術総合研究所 マイクロ波プラズマｃｖｄ装置及びそれを用いたダイヤモンドの合成方法
US9922791B2 (en) 2016-05-05 2018-03-20 Arizona Board Of Regents On Behalf Of Arizona State University Phosphorus doped diamond electrode with tunable low work function for emitter and collector applications
US10121657B2 (en) 2016-05-10 2018-11-06 Arizona Board Of Regents On Behalf Of Arizona State University Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation
US10704160B2 (en) 2016-05-10 2020-07-07 Arizona Board Of Regents On Behalf Of Arizona State University Sample stage/holder for improved thermal and gas flow control at elevated growth temperatures
US10418475B2 (en) 2016-11-28 2019-09-17 Arizona Board Of Regents On Behalf Of Arizona State University Diamond based current aperture vertical transistor and methods of making and using the same
DE102017217464A1 (de) 2017-09-29 2019-04-04 Gühring KG Verfahren zum Beschichten temperaturempfindlicher Substrate mit polykristallinem Diamant
DE102017214432A1 (de) 2017-08-18 2019-02-21 Gühring KG Verfahren zum beschichten temperaturempfindlicher substrate mit polykristallinem diamant
EP3669014B1 (fr) 2017-08-18 2024-08-07 Gühring KG Procédé pour recouvrir des substrats thermosensibles de diamant polycristallin
NO345052B1 (en) 2018-05-08 2020-09-07 Bergen Teknologioverfoering As Large area microwave plasma chemical vapour deposition (la mpcvd) reactor apparatus and method for providing same
WO2022054072A1 (fr) * 2020-09-13 2022-03-17 Sigma Carbon Technologies Système de croissance de matériau(x) cristallin(s)
US20220127721A1 (en) * 2020-10-23 2022-04-28 Applied Materials, Inc. Depositing Low Roughness Diamond Films

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985227A (en) * 1987-04-22 1991-01-15 Indemitsu Petrochemical Co., Ltd. Method for synthesis or diamond
JPH0729875B2 (ja) * 1987-12-12 1995-04-05 富士通株式会社 ダイヤモンド膜の合成方法
US5260106A (en) * 1990-08-03 1993-11-09 Fujitsu Limited Method for forming diamond films by plasma jet CVD
KR930011413B1 (ko) * 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
US5240749A (en) * 1991-08-27 1993-08-31 University Of Central Florida Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition
EP0582397A3 (fr) 1992-08-05 1995-01-25 Crystallume Matériel en diamant CVD pour détecteur de radiation et procédé pour fabriquer celui-ci.
JPH06256952A (ja) * 1993-03-04 1994-09-13 Ngk Spark Plug Co Ltd ダイヤモンド膜の製造方法
US5560779A (en) * 1993-07-12 1996-10-01 Olin Corporation Apparatus for synthesizing diamond films utilizing an arc plasma
CA2281972C (fr) 1993-07-20 2000-10-17 Saint-Gobain/Norton Industrial Ceramics Corporation Detecteur de particules employant du materiau a dcpv de diamant
US5518759A (en) * 1993-07-28 1996-05-21 Applied Science And Technology, Inc. High growth rate plasma diamond deposition process and method of controlling same
JPH0992491A (ja) * 1995-09-28 1997-04-04 Toshiba Corp プラズマ処理装置及びプラズマ処理方法
US5643365A (en) * 1996-07-25 1997-07-01 Ceram Optec Industries Inc Method and device for plasma vapor chemical deposition of homogeneous films on large flat surfaces
JP3861346B2 (ja) * 1996-12-04 2006-12-20 住友電気工業株式会社 ダイヤモンド合成方法
RU2114210C1 (ru) * 1997-05-30 1998-06-27 Валерий Павлович Гончаренко Способ формирования углеродного алмазоподобного покрытия в вакууме
US6200183B1 (en) * 1998-07-20 2001-03-13 Qqc, Inc. Application of electron field emission from diamond grown by a multiple pulsed laser process
JP4695821B2 (ja) 2000-06-15 2011-06-08 エレメント シックス （プロプライエタリイ）リミテッド Ｃｖｄにより造られた単結晶ダイヤモンド
KR100839707B1 (ko) 2000-06-15 2008-06-19 엘리먼트 씩스 (프티) 리미티드 두꺼운 단결정 다이아몬드 층, 이의 제조방법 및 상기층으로부터 제조된 젬스톤

Also Published As

Publication number Publication date
JP2006513123A (ja) 2006-04-20
US7662441B2 (en) 2010-02-16
ZA200505095B (en) 2006-10-25
US20060153994A1 (en) 2006-07-13
JP4969780B2 (ja) 2012-07-04
CA2512731A1 (fr) 2004-07-29
FR2849867A1 (fr) 2004-07-16
WO2004063430A1 (fr) 2004-07-29
EP1581676B1 (fr) 2013-08-21
EP1581676A1 (fr) 2005-10-05
AU2003246370A1 (en) 2004-08-10
CA2512731C (fr) 2012-06-12
AU2003246370A8 (en) 2004-08-10

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