US20060153994A1 - High-speed diamond growth using a microwave plasma in pulsed mode - Google Patents
High-speed diamond growth using a microwave plasma in pulsed mode Download PDFInfo
- Publication number
- US20060153994A1 US20060153994A1 US10/541,970 US54197005A US2006153994A1 US 20060153994 A1 US20060153994 A1 US 20060153994A1 US 54197005 A US54197005 A US 54197005A US 2006153994 A1 US2006153994 A1 US 2006153994A1
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- United States
- Prior art keywords
- plasma
- power
- carbon
- substrate
- hydrogen
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/103—Diamond-like carbon coating, i.e. DLC
- Y10S427/106—Utilizing plasma, e.g. corona, glow discharge, cold plasma
Abstract
Description
- The present invention relates to a method for manufacturing diamond using a pulsed microwave plasma.
- Current methods for manufacturing diamond films by microwave-plasma-assisted chemical vapour deposition (MP-CVD) are of limited effectiveness since the large amounts of energy needed to obtain diamond of electronic quality at reasonable growth rates (about 2 μm/h) lead to heating of the walls on which hydrogen atoms contained in the plasma, that activate the reaction, recombine and therefore cannot participate in the reaction. It is therefore necessary to install a constricting device for cooling the walls. In the proceedings of the Electrical Chemical Society (ECS) meeting held in San Francisco in 2001, it was proposed in “Diagnostics and modelling of moderate pressure microwave H2/CH4 plasmas obtained under pulsed mode” by a number of co-inventors to use a periodic pulsed discharge with a low duty cycle (the ratio of the time during which energy is emitted to the period of the discharge), in order to reduce the wall temperature, which is related to the average injected power, and therefore the recombination of hydrogen taking place thereon. Using such a pulsed discharge makes it possible to maintain a high temperature of the plasma, which is related to the power injected during the pulse, and therefore to obtain a higher concentration of hydrogen atoms in the plasma. Thus, a diamond film may be deposited at a higher rate for constant consumed power.
- The invention relates to a method of this type in which, in a vacuum chamber, a plasma of finite volume is formed near a substrate by subjecting a gas containing at least hydrogen and carbon to a pulsed discharge, which has a succession of low-power states and high-power states, and having a peak absorbed power PC, so as to obtain at least carbon-containing radicals in the plasma and to deposit the said carbon-containing radicals on the substrate in order to form a diamond film thereon.
- The object of the present invention is to further improve these methods, especially their efficiency.
- For this purpose, the invention provides a process for manufacturing a diamond film assisted by a pulsed microwave plasma, which, apart from the abovementioned features, is characterized in that power is injected into the volume of the plasma with a peak power density of at least 100 W/cm3 while maintaining the substrate to a substrate temperature of between 700° C. and 1000° C.
- By virtue of these arrangements, it is possible to obtain rapid growth of a diamond film, especially of electronic quality, on the substrate.
- In preferred embodiments of the invention, one or more of the following arrangements may optionally be furthermore employed:
- a plasma having at least one of the following features is generated near the substrate:
-
- the pulsed discharge has a certain peak absorbed power PC and the ratio of the peak power to the volume of the plasma is between 100 W/cm3 and 250 W/cm3,
- the maximum temperature of the plasma is between 3500 K and 5000 K,
- the temperature of the plasma in a boundary region of the plasma located less than 1 cm from the surface of the substrate is between 1500 K and 3000 K and
- the plasma contains hydrogen atoms having a maximum concentration in the plasma of between 1.7×1016 and 5×1017 cm−3;
- said gas contains carbon and hydrogen in a carbon/hydrogen molar ratio of between 1% and 12%;
- said gas contains at least one hydrocarbon and a plasma having a concentration of the carbon-containing radicals of between 2×1014 cm−3 and 1×1015 cm−3 is generated;
- a pulsed discharge is produced, in which the ratio of the duration of the high-power state to the duration of the low-power state is between 1/9 and 1;
- at least one of the following parameters is estimated:
-
- a substrate temperature,
- a temperature of the plasma,
- a temperature of the plasma in said boundary region, located less than 1 cm from the surface of the substrate,
- a concentration of atomic hydrogen in the plasma,
- a concentration of carbon-containing radicals in the plasma,
- a concentration of carbon-containing radicals in said boundary region close to the plasma,
- a pressure of the plasma and
- a power density of the plasma, and the power emitted as a function of time is adapted according to at least one of these parameters;
- the plasma is contained in a cavity with at least one of the following properties:
-
- the pulsed discharge has a peak power of at least 5 kW at 2.45 GHz,
- the pressure of the plasma is between 100 mbar and 350 mbar and
- the gas containing hydrogen and carbon is emitted with a ratio of the flow rate to the volume of the plasma of between 0.75 and 7.5 sccm/cm3;
- the plasma is contained in a cavity with at least one of the following properties:
-
- the pulsed discharge has a peak power of at least 10 kW at 915 MHz,
- the pressure of the plasma is between 100 mbar and 350 mbar and
- the gas containing hydrogen and carbon is emitted with a ratio of the flow rate to the volume of the plasma of between 0.75 and 7.5 sccm/cm3.
- Other aspects, objects and advantages of the invention will become apparent on reading the description of one of its embodiments which is given as a non-limiting example.
- The invention will also be more clearly understood from the drawings, in which:
-
FIG. 1 shows one embodiment of the method according to the invention; and -
FIGS. 2 a and 2 b are graphs showing a pulsed discharge according to the invention. - In the various figures, the same references denote identical or similar elements.
-
FIG. 1 shows an example of how to implement the method according to the invention using a vacuum chamber 1 containing asupport 2 placed on itsbase 3. This vacuum chamber is placed in a Faradaycage 13 acting as cavity or the vacuum chamber itself acts as cavity. Also in the vacuum chamber is asingle injection nozzle 4, or a plurality of injection nozzles, for emitting into the vacuum chamber, gases comprising, on the one hand, a source of molecular hydrogen, such as dihydrogen H2, and, on the other hand, a source of carbon, such as for example a hydrocarbon like methane CH4, carbon dioxide CO2 or the like. - Controlled amounts of argon (Ar) or of dopants and impurities, such as boron (B), sulphur (S), phosphorus (P) or other dopants, may furthermore be emitted by the
injection nozzle 4. - Positioned on the
support 2 is asubstrate 5, which for example may be a single-crystal or polycrystalline, natural or synthetic, diamond substrate, or even a non-diamond substrate, such as a silicon substrate, whether biased or not, an SiC substrate or an iridium or platinum substrate for example. - The gases emitted by the
injection nozzle 4 expand into the vacuum chamber and are exposed to a discharge generated by amicrowave generator 6 such as a GE 60KEDC SAIREM microwave generator operating at 2.45 GHz or a microwave generator operating at 915 MHz, the microwaves being guided by awaveguide 14. This discharge is coupled to thecavity 13 in such a way that the gases form, around thesubstrate 5, aplasma 7 comprising, apart from the molecules of the gases: - hydrogen atoms H and
- carbon-containing radicals, for example those in the form of CH3, and in general in the form of CxHy or the like.
- The
plasma 7 may adopt an almost hemispherical shape, for example with a diameter of between 5 cm and 10 cm or other, about thesubstrate 5. The carbon atoms contained in theplasma 7 are deposited on thesubstrate 5 and form adiamond film 8. - The
substrate 5 and thediamond film 8 are heated by the surroundingplasma 7 up to a substrate temperature TS of around 700° C. to 1000° C. Furthermore, the temperature of the substrate and of the film may be regulated by a regulating device (not shown) suitable for heating and/or cooling the substrate, this device being contained for example in thesupport 3. This makes it possible, during implementation of the method, to decouple the injected power parameters from the substrate temperature parameters. - The power generated by the
microwave generator 6 is illustrated inFIG. 2 a. This power is periodic with time and has, over a period T: - a peak power PC for a heating time Ton and then
- a low power, relative to the high power, which might be almost zero, for a standby time Toff.
- The signal is not necessarily strictly periodic during the method, and the durations of the heating and standby times Ton and Toff may vary, for example depending on the conditions measured in the plasma.
- Likewise, the emitted power is not necessarily a square wave. For any periodic signal, it is possible, over a period, to calculate the mean Pm of the emitted power. The emitted power greater than the mean power defines the heating time Ton and is called hereafter the “high power”. The high power has a maximum instantaneous value called the “peak power” PC. The emitted power less than the mean power defines the standby time Toff and is called hereafter the “low power”. The times Ton and Toff are optionally fractionated over a period.
- Within the context of the invention, the peak power PC may have a value of between 5 kW and 60 kW.
- The duty cycle of the
microwave generator 6, equal to the ratio of the heating time Ton to the period T=Ton+Toff, is between 100% and 50%. Thus, the ratio of the time when high power is emitted to the time when low power is emitted may be between 1/9 and 1. - Apart from in a transient regime at the start of the heating time Ton, having a duration much less than Ton, during which the plasma volume varies, principally increasing, the plasma has during the heating time Ton a generally constant volume directly related to the pressure of the plasma, which in practice is between approximately 100 mbar and 350 mbar, and to the microwave frequency of the microwave generator used. The rest of the description ignores the transient state occurring at the start of the heating time, taking into account only the “steady state” of the plasma that occurs thereafter.
- Such a periodic pulsed discharge is used to obtain a pulsed plasma whose temperature remains high, thereby guaranteeing high concentrations of hydrogen atoms H and carbon-containing radicals and therefore a high deposition rate, while maintaining a low temperature of the
walls 13 of the vacuum chamber 1. With such an absorbed power, the temperature of theplasma 7 rises up to a maximum value of between 3500 K and 5000 K. Consequently, and depending on the volume of theplasma 7, the power density corresponding to the peak power injected into the plasma is between 100 W/cm3 and 250 W/cm3. This power density is calculated as the ratio of the peak power PC to the volume of theplasma 7, which may be measured by specific measurement means such as, for example, optical spectroscopy, or by a high-speed optical camera of the “Flash Cam” type, for example in the visible range, or by other means. The gas temperature in a boundary region of the plasma, located less than 1 cm from the surface of the substrate, between the substrate and the generator, may also be between 1500 K and 3000 K. - These conditions greatly favour the disruption of the molecular hydrogen H2 emitted by the
injection nozzle 4 and the formation of carbon-containing radicals. A concentration of atomic hydrogen in the plasma of between 1.7×1016 cm−3 and 5×1017 cm−3 may be measured. Such an atomic hydrogen concentration makes it possible to increase the reaction rate for depositing the carbon-containing radicals contained in the plasma in the form of diamond to a high reaction rate, while guaranteeing the electronic quality of the diamond film produced. These conditions thus advantageously allow the concentration of carbon-containing radicals in the plasma to be increased so that the latter may contain between 2×1014 cm−3 and 1×1015 cm−3 CH3 radicals. Since the incorporation of carbon atoms into thediamond film 8 being formed is substantial, the molecular methane may be emitted by theinjection nozzle 4 with a molar ratio with respect to molecular hydrogen H2 of possibly up to 12%. - In the considered embodiment, the volume of the plasma is kept overall constant at 65 cm3 by a flow via the
injection nozzle 4 with a flow rate of between 50 sccm and 500 sccm, which corresponds to a ratio of the flow rate to the volume of plasma of between 0.75 and 7.5 sccm/cm3 for example. Of course, it is unnecessary for the plasma to maintain a constant volume during the method, nor indeed does this volume have to be around 65 cm3. The volume of the plasma may be modified by regulating its pressure within the 100 mbar-350 mbar range. Furthermore, the volume of the plasma may also be increased or reduced by using a microwave generator at a lower or higher microwave frequency respectively. - As explained above, using a controlled pulsed discharge allows the characteristics of the plasma to be increased, in particular the atomic hydrogen and carbon-containing radical concentrations therein, since the temperature of the plasma can be increased while the wall temperature, directly related to the mean power of the discharge, remains low. The significant parameters governing the growth of the diamond film are thus directly related to the peak power.
- Thus, by reducing the heating time Ton for a given period, and for a given mean power, the peak power PC may be increased up to maximum values ranging from 6 kW to 60 kW, depending on the generator used. The reaction rate is related to the concentration of atomic hydrogen and of carbon-containing radicals in the
plasma 7 and by the temperature of the substrate TS. On the other hand, the mean power of the discharge cycle must remain low so as to avoid an excessively high temperature of thewalls 13 of the vacuum chamber 1, which leads, for a constant period T of the discharge cycle, to reducing the heating time Ton and increasing the standby time Toff. During that part of the discharge cycle between Ton and T, a low, even zero, microwave power is injected into theplasma 7 so that the radicals in this plasma recombine. Thus, the concentration of atomic hydrogen H in theplasma 7 decreases during this time interval and the atoms recombine into hydrogen molecules H2, which again will have to be disrupted during the next discharge, thereby reducing the efficiency of the process. During the standby time Toff, the atomic hydrogen concentration decreases with time, characterized by a lifetime TV of the hydrogen atoms in the plasma that depends on the temperature and pressure conditions of the plasma. It is desirable to try to limit the process of hydrogen atoms recombining during the standby time Toff so as to have to disrupt the minimum amount of hydrogen molecules H2 during the next heating time Ton. - The invention makes it possible to obtain a pulsed microwave plasma using an
energy source 6 delivering a periodic discharge with time, the standby time Toff of which is strictly shorter than the lifetime TV of the hydrogen atoms in theplasma 7. - The lifetime TV of the atomic hydrogen H in the
plasma 7 may be determined, for example, by a known plasma induced fluorescence (PIF) technique consisting in generating, as shown inFIG. 2 b, in addition to the first power peak of duration Ton, with a peak power PC a second power peak, after the first, at a defined time T0 taken between Ton and T and of short duration, for example about 1/10 of Ton, which, by direct collision with an electron, excites the hydrogen atoms H still present in theplasma 7 at time T0, this excitation being measured and compared with the excitation caused by the first peak of the discharge, thereby making it possible to determine the concentration of hydrogen atoms H remaining in theplasma 7 at time T0 and therefore the hydrogen atom lifetime under the given conditions of the plasma. Optionally, this information may be transmitted to themicrowave generator 6 which adapts the parameters of the discharge accordingly. Other known techniques, such as laser-induced stimulated emission (LISE) or two photon laser-induced fluorescence may be used in this context. - Measures may also be taken to ensure that, during the standby time Toff, a residual power PR of about 10% of the peak power PC is injected into the plasma so that the
microwave generator 6 remains active and can deliver more rapidly, at the start of each new discharge cycle period, a high peak power PC.
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0300254 | 2003-01-10 | ||
FR0300254A FR2849867B1 (en) | 2003-01-10 | 2003-01-10 | HIGH-SPEED DIAMOND GROWTH BY PLASMA MICROWAVE IN PULSE REGIME. |
PCT/EP2003/007142 WO2004063430A1 (en) | 2003-01-10 | 2003-06-18 | High-speed diamond growth using a microwave plasma in pulsed mode |
Publications (2)
Publication Number | Publication Date |
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US20060153994A1 true US20060153994A1 (en) | 2006-07-13 |
US7662441B2 US7662441B2 (en) | 2010-02-16 |
Family
ID=32524827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/541,970 Expired - Fee Related US7662441B2 (en) | 2003-01-10 | 2003-06-18 | High-speed diamond growth using a microwave plasma in pulsed mode |
Country Status (8)
Country | Link |
---|---|
US (1) | US7662441B2 (en) |
EP (1) | EP1581676B1 (en) |
JP (1) | JP4969780B2 (en) |
AU (1) | AU2003246370A1 (en) |
CA (1) | CA2512731C (en) |
FR (1) | FR2849867B1 (en) |
WO (1) | WO2004063430A1 (en) |
ZA (1) | ZA200505095B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090258197A1 (en) * | 2006-07-18 | 2009-10-15 | Etsuko Hino | Composite Composition for Micropatterned Layers |
WO2019216772A1 (en) | 2018-05-08 | 2019-11-14 | Bergen Teknologioverføring As | Large area microwave plasma cvd apparatus and corresponding method for providing such deposition |
US11162172B2 (en) | 2017-08-18 | 2021-11-02 | Guehring Kg | Method for coating temperature-sensitive substrates with polycrystalline diamond |
WO2022087054A1 (en) * | 2020-10-23 | 2022-04-28 | Applied Materials, Inc. | Depositing low roughness diamond films |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2476478A (en) | 2009-12-22 | 2011-06-29 | Element Six Ltd | Chemical vapour deposition diamond synthesis |
US10273598B2 (en) | 2009-12-22 | 2019-04-30 | Element Six Technologies Limited | Synthetic CVD diamond |
JP6775771B2 (en) * | 2015-09-10 | 2020-10-28 | 国立研究開発法人産業技術総合研究所 | Microwave plasma CVD equipment and diamond synthesis method using it |
US9922791B2 (en) | 2016-05-05 | 2018-03-20 | Arizona Board Of Regents On Behalf Of Arizona State University | Phosphorus doped diamond electrode with tunable low work function for emitter and collector applications |
US10704160B2 (en) | 2016-05-10 | 2020-07-07 | Arizona Board Of Regents On Behalf Of Arizona State University | Sample stage/holder for improved thermal and gas flow control at elevated growth temperatures |
US10121657B2 (en) | 2016-05-10 | 2018-11-06 | Arizona Board Of Regents On Behalf Of Arizona State University | Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation |
US10418475B2 (en) | 2016-11-28 | 2019-09-17 | Arizona Board Of Regents On Behalf Of Arizona State University | Diamond based current aperture vertical transistor and methods of making and using the same |
DE102017217464A1 (en) | 2017-09-29 | 2019-04-04 | Gühring KG | Process for coating temperature-sensitive polycrystalline diamond substrates |
DE102017214432A1 (en) | 2017-08-18 | 2019-02-21 | Gühring KG | PROCESS FOR COATING TEMPERATURE-SENSITIVE SUBSTRATES WITH POLYCRYSTALLINE DIAMOND |
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- 2003-06-18 AU AU2003246370A patent/AU2003246370A1/en not_active Abandoned
- 2003-06-18 WO PCT/EP2003/007142 patent/WO2004063430A1/en active Application Filing
- 2003-06-18 JP JP2004565926A patent/JP4969780B2/en not_active Expired - Lifetime
- 2003-06-18 EP EP03815047.0A patent/EP1581676B1/en not_active Expired - Lifetime
- 2003-06-18 CA CA2512731A patent/CA2512731C/en not_active Expired - Fee Related
- 2003-06-18 US US10/541,970 patent/US7662441B2/en not_active Expired - Fee Related
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2005
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Publication number | Priority date | Publication date | Assignee | Title |
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US20090258197A1 (en) * | 2006-07-18 | 2009-10-15 | Etsuko Hino | Composite Composition for Micropatterned Layers |
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US11162172B2 (en) | 2017-08-18 | 2021-11-02 | Guehring Kg | Method for coating temperature-sensitive substrates with polycrystalline diamond |
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Also Published As
Publication number | Publication date |
---|---|
AU2003246370A8 (en) | 2004-08-10 |
FR2849867B1 (en) | 2005-03-25 |
EP1581676B1 (en) | 2013-08-21 |
AU2003246370A1 (en) | 2004-08-10 |
CA2512731A1 (en) | 2004-07-29 |
JP4969780B2 (en) | 2012-07-04 |
CA2512731C (en) | 2012-06-12 |
JP2006513123A (en) | 2006-04-20 |
FR2849867A1 (en) | 2004-07-16 |
WO2004063430A1 (en) | 2004-07-29 |
ZA200505095B (en) | 2006-10-25 |
US7662441B2 (en) | 2010-02-16 |
EP1581676A1 (en) | 2005-10-05 |
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